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In this work, we developed a novel system of isovalent Zr4+ and donor Nb5+ co-doped CaCu3Ti4O12 (CCTO) ceramics to enhance dielectric response. The influences of Zr4+ and Nb5+ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr4+ and Nb5+ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu3Ti3.8-xZrxNb0.2O12 (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr4+ and Nb5+ ions than that of single-doped with Zr4+ or Nb5+ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~105) at a frequency range of 102–105 Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr4+ and Nb5+ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.  相似文献   
3.
在80 MHz~1 GHz频段,单个功率管输出功率能达到100 W以上,为研制输出功率400 W的功率放大器,文中设计了四路功率合成器。该合成器需要实现功率容量大、工作频带宽、体积小的设计目标。在功率容量方面,文中采用悬置带状线结构,其功率容量远远大于微带线结构;在工作频带方面,采用切比雪夫九节阻抗变换器,将工作带宽拓宽为80 MHz~1 GHz;在体积方面,文中合成器的功率合成部分采用Y型节级联实现四路功率合成,阻抗变换部分采用切比雪夫阻抗变换器进行阻抗变换,该结构相较于磁环巴伦功率合成器,不但具有损耗小、平坦度高的优点,而且通过将阻抗变换器设计成曲折的形状,进一步缩小了合成器体积。仿真与实测结果显示该合成器在80 MHz~1 GHz范围内还具有较高的平坦度,合成效率可达90%以上。  相似文献   
4.
In this communication, the structural, micro-structural, dielectric, electrical, magnetic, and leakage-current characteristics of a double perovskite (Y2CoMnO6) ceramic material have been reported. The material was synthesized via a high-temperature mixed-oxide route. The compound crystallizes in a monoclinic structure which is confirmed from preliminary X-ray structural study. The morphological study by using scanning electron micrograph reveals the almost homogeneous distribution of grains throughout the surface of the sample. The nature of frequency-dependence of dielectric constant has been described by the Maxwell-Wagner model. The occurrence of a dielectric anomaly in the temperature dependence of dielectric permittivity study demonstrates the ferroelectric-paraelectric phase transition in the material. From the Nyquist plots, we found the existence of both grain and grain boundary effects. The frequency dependence of conductivity was studied by the Jonscher’s Power law, and the conduction phenomenon obeys the large overlapping polaron tunneling model. By using the Arrhenius equation, the activation energy has been calculated which is nearly equal to the energy required for the hoping of the electron. Both impedance and conductivity analysis demonstrate that the sample exhibits negative temperature coefficient of resistance (NTCR) properties indicating the semiconducting type of material at high temperatures. The anti-ferromagnetic character of the material is observed from the nature of magnetic hysteresis loop. The leakage current analysis suggests that the conduction process in the material follows the space charge limited conduction phenomenon. Such material will be helpful for modern electronic devices and spintronic applications.  相似文献   
5.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.  相似文献   
6.
This study deals with the utility of mini spray dryer process to improve the dispersibility, of graphene oxide(GO) and its application for high-performance supercapacitor. Initially, the neutral solution of GO was obtained using the modified Hummer's method. After this, the prepared GO solution was processed by mini spray dryer to obtain a more purified, lighter, and dispersed form of GO which is named as spray dryer processed GO (SPGO). The SPGO thus obtained showed excellent dispersibility behavior with various solvents, which is not found in case of conventional oven drying. Furthermore, utility of SPGO and its reduced form (r-SPGO) for supercapacitor applications have been investigated. Results obtained from the cyclic voltammetry(CV) analysis, impedance, and charge-discharge behavior of supercapacitor fabricated using r-SPGO shows enhanced features. Therefore, the simple spray dried GO and its reduced form, that is, r-SPGO can be utilized as a potential candidate for the supercapacitor application. Herein, as synthesized SPGO exhibited the specific capacitance of 12.07 and 37.6 F/g with PVA-H3PO4 and 1 mol/L H3PO4, respectively, at a scan rate of 5 mV/s. On the other hand, reduced form of SPGO, that is, r-SPGO showed the specific capacitance of 27.16 and 230 F/g with PVA-H3PO4 and 1 mol/L H3PO4, respectively.  相似文献   
7.
A novel glass-ceramic material based on albite type Na-rich feldspar has been synthesized by conventional ceramic process. High crystallinity, >94%?Vol.% is obtained by fast sintering which allows energy saving processing. Albite is the main crystalline phase and tetragonal SiO2 is a secondary phase. Electrical properties were examined by complex impedance, DC measurements, and dielectric breakdown test. Dielectric characterization shows a non-Debye type dielectric behavior with low dielectric constant, 4.6 at 1?MHz, low dielectric losses, (~10?3 at 1?MHz, and a large dielectric strength, ~60?kV/mm), that it is the largest value reported in ceramic insulators. Those dielectric properties are attained by the low glassy phase content in the samples and their unique micro-nanostructure. All these properties make this novel material a very promising candidate in the market of ceramic electrical insulator, highlighting for high-voltage applications.  相似文献   
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9.
周萍 《电子工程师》2006,32(1):61-64
从扬声器系统的等效类比线路出发,得出了阻抗特性Z(jω)的表达形式及其曲线。采用全面最小二乘法识别扬声器系统的时域函数的全套系数,从而测出扬声器系统的低频特性参数。以计算机仿真技术为基础,通过MATLAB和EWB软件进行系统模拟分析仿真,得到扬声器系统的阶跃响应、阻抗曲线等特性。  相似文献   
10.
提取地震信号高频信息方法的若干问题   总被引:1,自引:0,他引:1  
岩性油气藏勘探已成为当代油气勘探的重要组成部分,因此提取地震资料高频信息已成为一个重要研究课题。文中对分辨率、分频处理地震信号、波阻抗反演中的一些问题进行了较深入的讨论,并得出以下认识:1要提高垂向和横向分辨率,必须设法提高野外采集地震资料的频率;2地震分频处理是偏移后提高分辨率的常用方法之一,这种方法应该限定在地震波的有效频带内,而超出有效频带,可能会带来很多假像;3低频合成地震记录中高频反射系数存在不确定性。在基于模型波阻抗反演的方法中,反演结果受初始模型的影响非常大,初始模型是依据测井资料建立的,初始模型与实际情况越接近,反演效果就越好;否则,会产生模型化的现象;4在相对波阻抗数据体(相当于地震数据体)作为约束条件下的SP测井参数协克里金插值是正演过程,消除了模型化的问题,使反演结果更接近真实情况,提高了砂层真实的分辨率。  相似文献   
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