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1.
We have improved the electronic properties of narrow-bandgap (Tauc gap below 1.5 eV) amorphous-silicon germanium alloys (a-SiGe:H) grown by hot-wire chemical vapor deposition (HWCVD) by lowering the substrate temperature and deposition rate. Prior to this work, we were unable to grow a-SiGe:H alloys with bandgaps below 1.5 eV that had photo-to-dark conductivity ratios comparable with our plasma-enhanced CVD (PECVD) grown materials [B.P. Nelson et al., Mater. Res. Soc. Symp. 507 (1998) 447]. Decreasing the filament diameter from our standard configuration of 0.5 mm to 0.38 or 0.25 mm provides first big improvements in the photoresponse of these alloys. Lowering the substrate temperature from our previous optimal temperatures (Tsub starting at 435 °C) to at 250 °C provides additional photo-to-dark conductivity ratio increasing by two orders of magnitude for growth conditions containing 20–30% GeH4 in the gas phase (relative to the total GeH4+SiH4 flow). 相似文献
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维护大功率电子管和延长其使用寿命,对保障电视发射机稳定、安全、可靠地工作和节约资金都起着重要作用。本文重点从理论上分析了如何延长大功率管的寿命,以及怎样才能在实际电路中实施这一方案。 相似文献
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Pressure drop of monofilament-woven fabrics is often calculated via the so-called orifice model in which a discharge coefficient is assigned to the weave's unit cell. In all previous models of woven fabrics, the filaments were assumed to have circular cross-sections—an assumption which is not entirely accurate especially when there is a considerable tension in the warps and wefts. Following the methodology developed by Lu et al. [1996. Fluid flow through basic weaves of monofilament filter cloth. Textile Research Journal 66 (5), 311-323], a new set of expressions are derived for calculating the most constricted open area, and so the discharge coefficient, of plain-woven monofilament fabrics having filaments with elliptical cross-sections. Conducting numerical simulations for computing the pressure drop of such fabrics, we observed a logarithmic relationship between the discharge coefficient and the Reynolds number. It was also shown that the discharge coefficient decreases by increasing the aspect ratio of the filaments’ cross-section. 相似文献
5.
单丝牌号5000S是大庆HDPE装置的主要产品,适用于加工渔网丝、编织袋等产品。作者们讨论了产品的物性参数特点,分析了以往产品质量存在的主要问题。从工艺技术方面对于如何提高5000S产品的优级品率,提高产品的加工性能和使用性能进行了讨论。 相似文献
6.
张三元 《中国图象图形学报》2001,6(6):573-576
曲面上的曲线造型是计算机图形领域的一个新的研究热点,而且它们在纤维织物编织,三维服装裁剪以及复合材料的纤维缠绕轨迹设计等领域有十分广泛的应用,为了解决圆环面上纤维轨迹的计算机辅助设计问题,研究了圆环面上测地线的解析解以及拟测地线数值求解的具体算法并给出了其表达式,测地线是曲面上两点之间最短距离的曲线段,在一般曲面上没有解析解,但是在圆环面上却可求出其精确的解析解,但在曲面的边沿部分,测地线因不能实现自然的折返过渡,于是拟测地线就被引进到曲面上的曲线造型设计之中,在拟测地线分析研究基础上,给出了圆环面上拟测地线的方程及数值解法,通过其在一个实例中的应用结果证明,该方法可获得织物的纺织条纹以及缠绕物体的纤维轨迹。 相似文献
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Ultrasonic propagation was used to provide heat and pressure in order to perform impregnation and consolidation during production of thermoplastic matrix composites. For this purpose, a new experimental set-up, integrating a laboratory filament winding machine with a horn and a compaction roller, was developed.The heat transfer phenomena occurring during continuous impregnation and consolidation were simulated solving by finite element (FE) analysis the energy balance equations in 2D accounting for the heat generated by ultrasonic waves, the melting characteristics of the matrix and the movement of the thermoplastic commingled roving.The temperature distribution in the composite, predicted by the numerical simulations, was validated by temperature measurements during the production of E-glass/polypropylene cylinders, with the optimized parameters obtained by the FE analysis. The ultrasonic consolidated composite cylinders were characterized by low void content and a shear modulus comparable with that obtained by the micromechanical analysis. 相似文献
9.
Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 104 s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. 相似文献
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