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1.
Hao Li Pengcheng Zhang Shengquan Yu Hongyu Yang Bin Tang Fuhai Li Shuren Zhang 《Ceramics International》2019,45(9):11639-11647
Mg2(Ti1-xSnx)O4 (x?=?0–1) ceramics were prepared through conventional solid-state method. This paper focused on the dependence of microwave dielectric properties on crystal structural characteristics via crystal structure refinement, Raman spectra study and complex chemical bond theory. XRD spectrums delineated the phase information of a spinel structure, and structural characteristic of these compositions were achieved with the help of Rietveld refinements. Raman spectrums were used to depict the correlations between vibrational phonon modes and dielectric properties. The variation of permittivity is ascribed to the Mg2(Ti1-xSnx)O4 average bond covalency. The relationship among the B-site octahedral bond energy, tetrahedral bond energy and temperature coefficient are discussed by defining on the change rate of bond energy and the contribution rate of octahedral bond energy. The quality factor is affected by systematic total lattice energy, and the research of XPS patterns illustrated that oxygen vacancies can be effectively restrained in rich oxygen sintering process. Obviously, the microwave dielectric properties of Mg2(Ti1-xSnx)O4 compounds were obtained (= 12.18, ?=?170,130?GHz, ?=??53.1?ppm/°C, x?=?0.2). 相似文献
2.
《Journal of the European Ceramic Society》2019,39(2-3):340-345
The Ca(1+2y)Sn(1-x)Si(1+y)O(5-2x+4y) low-permittivity microwave dielectric ceramics were prepared through solid-state reaction at 1350–1450 °C for 5 h. The relations between microwave dielectric properties and phase compositions for non-stoichiometric Ca(1+2y)Sn(1-x)Si(1+y)O(5-2x+4y) ceramics have been investigated. A single CaSnSiO5 phase with abnormally positive temperature coefficient of resonant frequency (τf = + 62.5 ppm/°C) was synthesised at 1450 °C. This composition was an effective τf compensator of CaSiO3 and Ca3SnSi2O9 phases with typically negative τf value. The CaSiO3 second phase was related to the Sn deficiency in the CaSn(1-x)SiO(5-2x) (0 < x < 1.0) composition, whereas the Ca3SnSi2O9 second phase was obtained by controlling the Ca:Sn:Si ratios on the basis of the Ca(1+2y)SnSi(1+y)O(5+4y) (0 < y < 1.0) composition. A promising low-permittivity millimetre-wave ceramic with most excellent microwave dielectric properties (εr = 10.2, Q×f = 81,000 GHz and τf = −4.8 ppm/°C) was produced from the Ca(1+2y)SnSi(1+y)O(5+4y) (y = 0.4) ceramic. 相似文献
3.
Gasification of polyethylene (PE) pellet was studied using atmospheric argon-steam plasma generated by microwave discharge and the feasibility of the process was examined. The experimental results showed that additional steam to argon plasma promoted the weight decrease of PE and enhanced the production of H2, CO, CO2 and CH4. The results confirmed that the treatment of plastics with the steam plasma was effective to obtain synthesis gas. 相似文献
4.
5(4H)-Oxazolones react with ammonium acetate under microwave irradiation and using graphite as support in an eco-friendly process.
The reaction was carried out under solvent-free conditions and the imidazolones were obtained quantitatively. Moreover the
reaction time was reduced too. 相似文献
5.
WKB近似下的Fourier衍射成象方法 总被引:1,自引:0,他引:1
对于介质目标微波衍射成象,本文引入了WKB近似来模拟目标内部总场。基于这种近似,我们导出了Fourier衍射公式,并采用了广义滤波逆传播方法由目标空间谱实现目标特性的重建。计算机模拟结果表明采用WKB近似重建目标特性较Born近似有明显改善。 相似文献
6.
介绍了高可靠电镀Ni/Au工艺在PTFE微波印制电路上的应用,并分析了氨基磺酸盐镀软镍和亚硫酸盐镀软金工艺的影响因素及提高Ni/Au镀层之间附着力的措施。通过实验及应用证明了与直接镀金工艺相比,在软基材PTFE敷铜箔板上镀Ni/Au工艺能大大提高微波电路的可焊性,高温稳定性和长期可靠性,并且用其所制作的微波器件的高频性能也优于直接镀金工业。 相似文献
7.
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9.
GaN材料系列的研究进展 总被引:3,自引:0,他引:3
GaN及其合金作为第三代半导体材料具有一系列优异的物理和化学性质,在光电子器件,高温大功率电子器件及高频微波器件应用方面具有广阔的前景,已成为当前高科技领域的研究重点,论述了这种材料的研究历史与发展现状,物理与化学性质,薄膜的生长方法及在光学电子和微电子器件应用于方面的研究进展。 相似文献
10.
微波介质谐振器介电参数的测量 总被引:6,自引:0,他引:6
本文讨论了微波介质谐振器介电参数测试技术。用研制的测试装置对多个介质样品进行了实测,结果表明,本文的分析与实际值是吻合的。该测试技术可对微波介质谐振器的复介电常数进行迅速、准确、可靠、宽频带、无损伤、自动化和批量检测,具有较强的实用性。 相似文献