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1.
2.
We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation. The most important group of TFT capable semiconductors are the several modifications of silicon films: amorphous, nanocrystalline and microcrystalline. We summarize their TFT properties and their compatibility with foil substrate materials. 相似文献
3.
A vibrating Kelvin probe in form of a platinum wire loop is used to measure the surface potential Us on electron-irradiated free-floating metal and insulator specimens as a function of electron energy E. This allows an accurate measurement of the critical electron energy E2 for no charging. At energies below E2, the positive charging increases with decreasing energy to Us=2–5 eV at E=0.5 keV and switching off the collector bias of the Everhart-Thornley detector. A two-to threefold increase of Us is observed when the bias is switched on. For E > E2, the strong increase of a negative surface potential can be measured. Insulating films free-supported on a conductive substrate show a steep decrease to small positive and negative Us when the film thickness becomes lower than the electron range at a critical energy E3 > E2. At insulating specimen the temporal decrease of charging can be measured when the electron beam is switched off. 相似文献
4.
Yilmaz Muslu 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1991,51(4):449-460
A dispersed flow model previously developed to study substrate utilization in unsaturated media was experimentally verified and its practical application was considered. For this purpose, measurements were made using tap water and a synthetic feed solution. The importance of the change in fluid regime as regards to the simultaneous transport and reaction within biological filters were demonstrated. The effect of drop formation and the breakage of liquid jets inside the filters on substrate utilization was also shown. 相似文献
5.
R. D. Dupuis J. C. Bean J. M. Brown A. T. Macrander R. C. Miller L. C. Hopkins 《Journal of Electronic Materials》1987,16(1):69-77
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical
vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge
and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied,
the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal
X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission
electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial
layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth
of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of
a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped
AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates. 相似文献
6.
Ran-Rong Lee 《Journal of the American Ceramic Society》1991,74(9):2242-2249
AIN ceramics with densities varying from 3.18 to 3.30 g/cm3 and room-temperature thermal conductivities varying from 88 to 193 W/m K were produced. Different sintering conditions, packing powders, AIN powder sources, carbon additive, and sintering times were evaluated, and the key processing parameters which cause the differences in density and thermal conductivity were identified. SEM, TEM, and EDS were used to characterize the correlation between thermal conductivity, microstructure, and processing parameters. The important parameters which control the thermal conductivity of AIN ceramics are discussed. 相似文献
7.
8.
The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional
phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention
than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous
workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming
reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural
results are presented. 相似文献
9.
Fadila Ayati Majda Aziza Rachida Maachi Abdeltif Amrane 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2008,83(1):27-33
BACKGROUND: Three groups of amino acids were previously characterized based on their ability to be assimilated as carbon source by Penicillium camembertii. To describe the diauxic growth recorded on glucose and amino acids from the second group, such as arginine, an unstructured model was previously developed, based on the sequential consumption of both carbon substrates, glucose, followed after its exhaustion, by arginine. The model was modified to describe also the behaviour recorded during growth on other amino acids. RESULTS: The growth model involved the carbon substrate consumption (Verlhust model) and the biomass on carbon substrate yield. Glucose was therefore considered during P. camembertii growth on nitrogen source amino acids (lysine—first group); and amino acid consumption was considered during growth on carbon source amino acids (glutamate—third group), with glucose being dissimilated only for energy supply. The excess nitrogen from amino acids was released as ammonium; the linking of this production to growth was found to increase with the ability of the amino acid to be assimilated as carbon source by P. camembertii. CONCLUSION: The various metabolic behaviours recorded during P. camembertii growth on amino acids, in the presence of a primary carbon source such as glucose, were proved to be satisfactorily described by the model, showing the robustness of the model. Copyright © 2007 Society of Chemical Industry 相似文献