Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10^?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices.     

Synthesis,characterization and charge transport properties of Pr–Ni Co-doped SrFe2O4 spinel for high frequency devices applications

Ferrites are materials of interest due to their broad applications in high technological devices and a lot of research has been focused to synthesize new ferrites. In this regard, an effort has been devoted to synthesize spinel Pr–Ni co-substituted strontium ferrites with a nominal formula of Sr_1-xPr_xFe_2-yNi_yO₄ (0.0 ≤ x ≤ 0.1, 0.0 ≤ y ≤ 1.0). The cubic structure of pure and Pr–Ni co-substituted strontium ferrite samples calcinated at 1073 K for 3 h has been confirmed through X-ray diffraction (XRD). Average sizes of crystallites (18–25 nm) have been estimated from XRD analysis and nanometer particle sizes of synthesized ferrites have been further verified by scanning electron microscopy (SEM). SEM results have also shown that particles are mostly agglomerated and all the samples possess porosity. It has been observed that at 298 K, the values of resistivity (ρ) increase, while that of AC conductivity, dielectric loss, and dielectric constants decrease with increasing amounts of Pr³⁺ and Ni²⁺ ions. The values of dielectric parameters initially decrease with frequency and later become constant and can be explained on the basis of dielectric polarization. Electrochemical impedance spectroscopy (EIS) studies show that the charge transport phenomenon in ferrite materials is mainly controlled via grain boundaries. Overall, synthesized ferrite materials own enhanced resistivity values in the range of 1.38 × 10⁹–1.94 × 10⁹ Ω cm and minimum dielectric losses, which makes them suitable candidates for high frequency devices applications.     

High resistivity measurement of SiC wafers using different techniques

To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique, and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer was also obtained and reported in this work.     

地面油管漏失定量测试方法探讨

对油管漏失进行定量测试的方法确定具体漏失位置。方法运用双频道回声探仪探测动液面的原理和工作方法，根据油管漏失形成的死油坏在测试曲线上出现特殊波位置判断油管漏失位置。结果：经过７０多井次的现场试验，该方法具有较高的准确性和可靠性。结论：利用特殊波可以有效监测油管漏失，并具有推广使用价值。     

基体温度对磁控溅射沉积ZAO薄膜性能的影响

利用中频交流磁控溅射方法 ,采用氧化锌铝陶瓷靶材 [w(ZnO) =98%、w(Al2 O3 ) =2 % ]制备了ZAO(ZnO∶Al)薄膜 ,观察了基体温度对ZAO薄膜的晶体结构、电学和光学性能的影响 ,采用X射线衍射仪对薄膜的结构进行了分析 ,采用光学分度计和电阻测试仪测量了薄膜的光学、电学特性 ,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率。结果表明 :沉积薄膜时的基体温度对薄膜的结构、结晶状况、可见光透射率以及导电性有较大的影响。当基体温度为 2 5 0℃ ,Ar分压为 0 8Pa时 ,薄膜的最低电阻率为 4 6× 10 -4Ω·cm ,方块电阻为 35Ω时 ,可见光 (λ =5 5 0nm)透射率高达 92 0 %。     

激电法找油的原理及应用

激电法是非地震物探手段中的一种，由于油气在向上渗透的过程中会与地层发生一系列的生物。化学反应而形成次生黄铁矿，激电法正是通过发现油气藏上方形成的次生黄铁矿晕来寻找油气的一种间接找油方法。通过详细介绍激电法寻找油气的基本原理。仪器设备等，从实践角度论述了激电法在油田勘探开发中的应用范围及其特点，最后通过兴例说明了其良好的应用效果。     

面向对象的三次参数样条曲线技术

本文利用Ｃ＋＋面向对象的特征，对三次参数样条曲线的定义和生成过程进行封装，从而极大地简化了三次参数样条曲线的定义和绘制过程     

用不稳定试井资料研究油藏储集层流动系统模式：以准东油区为例

从不稳定试井Ｈｏｒｎｅｒ曲线形态分类入手，结合油藏动态特征对油藏储集层流动系统进行分类，并初步确定出各类流动系统的特征参数及其相应的开采特点。根据不稳定试井Ｈｏｒｎｅｒ曲线形态，可以把相应的储集层流动系统划分为三大类（孔隙流动系统、双重介质流动系统、裂缝流动系统）五个亚类。特别提出了双重介质孔缝串并流动系统组合模式。这无论对新区开发方案的编制，还是老区开发政策的制定都具有重要的借鉴参考价值。     

基于自然地理形态的道路测设及其曲线方程的拟合

在山区村镇及风景旅游名胜区的建设中，其道路的曲线测设，往往要基于自然地理形态进行，也就是路径的选择，有时具有不可选择性，且要求与实地具有最大的符合性。因此，其测设的作业方法不同于一般意义的道路测设；其曲线方程的建立，也是极其困难的。本就基于自然地理形态的道路测设工作的曲线类型的选择、曲线的拟合方法、曲线方程的建立及其数据的计算，提出了利用CAD技术进行曲线拟合、曲线方程的建立、曲线计算的实用技术方法。     

测井曲线拐点在测井层序地层分析中的应用研究

在层序地层学研究中，层序界面的划分是基础和重要的环节，而利用测井资料分析可以进行层序界面划分和进行较长期基准面旋回识别。测井曲线的值是深度的函数，测井曲线的一阶导数表示了曲线变化的趋势和变化的快慢，在某一范围内，当一阶导数呈现符号转换时，相对应的深度点的测井值即为该范围内极大（极小）值；测井曲线的二阶导数则表示曲线的凹凸性，在某一范围内，当二阶导数呈现符号转换时，相对应的深度点代表了测井曲线的拐点，即反映曲线凹凸性变化的转折点，亦即地层的分界面。基于以上特点，提出利用测井曲线拐点进行层序界面划分的原理和方法，并结合岩心和录井资料，对白音查干凹陷达28井腾格尔组不同级次沉积旋回、地层垒积、旋回特征随沉积厚度变化特点和不同级次基准面旋回进行研究，最后得到该地层单井测井层序地层分析结果。