Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.     

CMP系统技术与市场

概述了CMP系统技术的发展历史、发展趋势以及在IC生产中的重要性,介绍了国外CMP设备主要制造厂家的设备型号和性能及CMP设备市场分布和需求,阐述了CMP系统技术的基础研究、关键技术和国内研究概况。     

Characterization and optimization of copper chemical mechanical planarization

The feature scale planarization of the copper chemical mechanical planarization (CMP) process has been characterized for two copper processes using Hitachi 430-TU/Hitachi T605 and Cabot 5001/Arch Cu10K consumables. The first process is an example of an abrasive-free polish with a high-selectivity barrier slurry, while the second is an example of a conventional abrasive slurry with a low-selectivity barrier slurry. Copper fill planarization has been characterized for structures with conformal deposition as well as with bumps resulting from bottom-up fill. Dishing and erosion were characterized for several structures after clearing. The abrasive-free polish resulted in low sensitivity to overpolish and low saturation levels for dishing and erosion. Consequently, this demonstrated superior performance when compared to the International Technology Roadmap for Semiconductors (ITRS) 2000 roadmap targets for planarization. While the conventional slurry could achieve the 0.13-μm technology node requirements, the abrasive-free polish met the planarization requirements beyond the 0.10-μm technology node.     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

用于铜的化学机械抛光液的研究

文中介绍了一种以碱性抛光液对铜进行全局平面化的方法 ,讨论了以 Si O2 水溶胶为磨料的抛光液在Cu-CMP过程中的化学 (络合 )作用及反应机理 ,并给出了抛光液的配比及上机实验结果。结果表明 :该抛光液用于对带有阻挡层和介质层的铜抛光 ,达到了对铜层的高去除速率和高选择比 ,取得了较好的全局平面化效果     

常速度梯度射线追踪与二维层速度反演

速度问题是勘探地震学的核心 ,可以借助常速度梯度射线追踪方法 ,从反演的角度探讨速度建模问题。在射线追踪方面 ,从程函方程出发 ,将复杂的速度场剖分成小的矩形单元 ,并假设在每个矩形单元内速度具有常速度梯度 ,由此导出的一组常速度梯度射线追踪公式 ,可实现非均匀介质的射线追踪 ,具有适应性强、精度高和快速的优点。在层速度反演方面 ,采用相干速度反演的思想 ,根据各向同性介质中 ,零偏移距射线在界面处是法向入射的原理 ,建立了合成共中心点道集与射线深度偏移的正反演关系 ,由此利用合成共中心点道集与观测的共中心点道集逼近 ,采用层剥离方法进行层速度反演。通过理论推导与模型试算得到如下的认识与结论 :常速度梯度射线追踪具有较高的计算精度与效率 ,公式采用向量形式很容易推广到三维 ;确定层速度采用的是正反演相结合的方法 ,可得到稳定的速度场 ;该方法屏弃了基于双曲时矩关系确定层速度场的假设 ,使其能适应任意的速度分布。     

注水站微机数据采集与控制系统

用工控机组成了油田注水站数据采集系统．给出了系统的组成及测量方法，并讨论了系统的可靠性等问题．     

新型微光探测器滤光玻璃

系统分析了微光探测器的结构及其原理。鉴于当前器件存在的激光致盲威胁,提出了新的改进思路。着重介绍了具有特殊激光防护性能的滤光材料,并对其原料及制备、加工过程作了系统地介绍,同时给出了一些重要的性能特征。     

Potassium sorbate solutions as copper chemical mechanical planarization (CMP) based slurries

Copper depassivation and repassivation characteristics in potassium sorbate solutions, subsequent to mechanical abrading are reported. The identification of copper repassivation kinetics obtained subsequent to mechanical damage of copper protective films formed in sorbate based solutions is discussed. The repassivation rate of copper in sorbate based solutions was measured by means of a slurryjet system capable of measuring single particle impingments on microelectrodes. Copper repassivation rates measured by this slurryjet system in sulfate solutions containing 10 g L⁻¹ potassium sorbate were found to be in the range of 0.5-1.5 ms. An increase in the potassium sorbate concentration leads to a decrease in copper repassivation time at potentials ranging from 200 to 600 mV_Ag/AgCl. The impingement angle between the copper surface and a single abrasive particle has no impact on copper repassivation time nor peak current (I_max) values. XPS studies revealed that copper passivation in potassium based solution was due to the formation of a thin film which is constituted of: Cu₂O, Cu(OH)₂ and Cu(II)-sorbate, while copper(II)-sorbate is mainly present at the top levels of the passive film. It is therefore recommended that the use of potassium sorbate as a passivating component in conjunction with the addition of strong oxidizing agents in chemical mechanical planarization (CMP) slurry design should be considered.     

基于internet的电力线监测系统设计与实现

介绍了电力接地线监测系统的规划、设计和实现过程.该系统基于B/S(Browser/Server)模式运行,包括智能接地监测仪、远程观测点和监控中心系统.电力线的接地状态由监测仪采集,并通过GSM短消息向监控平台传输数据.为确保系统的安全,系统中的关键数据进行了MD5加密.登陆用户对数据库的操作情况以日志文件的形式保存,支持智能模糊查询、数据备份及恢复.