铁电晶体TGS的快速生长

报道了TGS晶体的溶液状态及其快速生长的实验结果。发现了pH为2.52的溶液是实现快速生长的最佳溶液,利用快速旋转叶片来加速溶液对流,对于截面积为40mm×40 mm的(010)面,其生长速度达到了5mm/d,对快速生长的TGS晶体的性能研究表明:其热电和介电性能也发生了一些变化。     

Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis

A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~7.They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.     

利用铁电晶体四波混频的光学无损检测

本文描述了一种利用铁电晶体简并四波混频的实时二次曝光法。该方法利用这种晶体的介电弛豫时间检测相位物体的不均匀性。文中给出了较详细的有关理论分析和公式推导,并且对实际玻璃样品进行了测量,验证了该方法的可行性及实用性。     

自旋电子电晶体

《自然最新科学信息》的报告称：利用电子自旋的性质，科学家提出了新的电晶体的设计方法。     

引入悬浮栅对有机薄膜晶体管的阈值电压进行调整

The structure of organic thin film transistors (OTFTs) is optimized by introducing floating gate into the gate dielectric to reduce the threshold voltage of OTFTs in this article. Then the optimized device is simulated and the results of the simulation show the threshold voltage of optimized device is reduced by about 10 V. The reduction of the threshold voltage is helpful and useful for the application of OTFTs in many areas. In addition, this way to reduce threshold voltage of OTFT is compatible with traditional silicon technology and can be used in manufacture.     

AMD半导体发表能有效提升晶片效能的双闸极式电晶体

全球第二大个人电脑 (PC)微处理器制造商超微半导体 (Advanced Micro Devices) AMD表示 ,已成功缩减电晶体 (晶体管 )的体积 ,使得一颗晶片上可容纳高达 1 0亿个电晶体。电晶体是微处理器的基本分子 ,当电晶体快速开启与关闭时 ,便赋予了晶片运算的能力。超微表示 ,该公司采用业界标准技术 ,已制造出迄今最小的双闸极式电晶体 (double- gatetransistors)。供电流通过以启动电晶体的闸门仅宽 1 0纳米 (奈米 )。双闸极式电晶体问世意味着目前能容纳 1亿个电晶体的晶片 ,可能容纳 1 0亿个此种微小的电晶体。双闸极式电晶体能有效地让从中通…     

铁电存储器FM24C16原理及其在多MCU系统中的应用

FM24C16是美国Ramtron公司以铁电晶体为材料生产的铁电存储器(FRAM)，和一般的EEPROM比较，其具有无写延时、超低功耗、无限次写入等超级特性，特别适合在那些对写入时间和次数有较高要求的应用场合，而且其与单片机接口电路简单，应用方便．本文对FM24C16的工作原理、应用电路及应用程序做了比较详细的介绍．     

Cd_xSBN晶体的介电、铁电及热释电性

本工作研究了用 Cd 改性的铌酸锶钡晶体(配方为 Cd_xSr_(0.5-x/(?))Ba_(0.5-x/(?))Nb_2O_6,x=0,0.005,0.01,0.015,0.03,0.05)的介电温度(10～580K)特性、低温(10～300K)热释电性以及室温时的介电谱和铁电性。发现在350～400K 范围内,晶体发生顺电-铁电相变;在100K 附近,ε′—T 曲线和 P—T 曲线稍有转折,可能存在新的相变;这些晶体的新鲜样品的电滞回线有严重的收缩现象,实验表明,在电滞回线的收缩过程中,这些试验样品被部分极化。     

异质栅纳米碳管场效应管线性掺杂效应的研究

The effects of linear doping profile near the source and drain contacts on the switching and high- frequency characteristics for conventional single-material-gate CNTFET （C-CNTFET） and hetero-material-gate CNTFET （HMG-CNTFET） have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green＇s functions （NEGF） solved self-consistently with Poisson＇s equations. The simulation results show that at a CNT channel length of 20 nm with chirality （7, 0）, the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects （SCEs） in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications.