基于磁流变液的井下钻具主动减振技术

基于磁流变液的主动减振技术可以控制钻具振动,提高机械钻速,降低钻井成本.在介绍井下减振技术发展现状的基础上,阐述了磁流变液阻尼器和基于磁流变液的主动减振短节(AVD)的工作原理,对AVD的减振性能进行了室内试验和现场对比试验.试验结果表明,AVD在将振动降至最弱程度的同时提高了机械钻速,还可避免钻柱振动破坏钻头及其他钻柱组件,增大钻头进尺和减少额外的起下钻次数.基于磁流变液的主动减振技术可以很好地解决钻具振动引起的钻压不稳、机械钻速低等问题.最后指出我国应该开展这方面的研究.     

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal-Insulator-Metal capacitors

Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta₂O₅, Ti-Ta-O, Sr-Ta-O and Nb-Ta-O oxide films for Metal-Insulator-Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TiN bottom electrodes, in the temperature range of 225-400 °C, were amorphous, whereas the post deposition annealing at 600 °C resulted in the crystallization of Nb-Ta-O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti-Ta-O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest (~ 10^− 5 A/cm² at − 2 V). On the other hand, Sr-Ta-O showed the lowest leakage current densities (~ 10^− 9 A/cm² at − 2 V) as well as the smallest capacitance-voltage nonlinearity coefficients (40 ppm/V²), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V²) were observed for Nb-Ta-O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents (~ 10^− 7 A/cm² at − 2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr-Ta-O showed no dependence of leakage current as a function of the measurement temperature.     

用下一代基于数字信号处理的仪器应对新兴多频带模拟测试挑战

满足性能需求的仪器。新的多频带模拟仪器的引入,使工程师能够应对从音频到视频,成本敏感的消费类混合信号器件的模拟测试挑战。通过提供更多的供电能力,这些新仪器进一步加强了自动化测试设备的能力,从而降低了市场领先应用的测试成本。     

轮胎包络面的仿真与测量

轮胎包络对轮罩、纵梁及周围板筋件的设计和造型有很重要的影响,利用多体动力学软件MotionView,对各种极限工况进行仿真分析,研究车轮的运动及包络,检查车轮与周围零部件的最小间隙,在车辆的前期开发中发挥着重要的作用。     

Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

HfO₂ films were grown by atomic vapour deposition (AVD) on SiO₂/Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO₂ based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 × 10¹² cm⁻². The interface trap charge density of HfO₂/SiO₂ stacks can be reduced to 3 × 10¹¹ eV⁻¹ cm⁻² near mid gap, by forming gas annealing. The extracted work function of 4.7 eV preferred the use of TiN as metal gate for PMOS transistors. TiN/HfO₂/SiO₂ gate stacks were integrated into gate-last-formed MOSFET structures. The extracted maximum effective mobility of HfO₂ based PMOS transistors is 56 cm²/Vs.     

原子层沉积技术发展现状

复杂的非平面结构基板形貌对传统的薄膜沉积技术产生了极大的挑战,不同类型的集成电路器件需要不同的生产技术,同时也对薄膜材料提出了不同的要求。为了突破现有材料的性能限制就要求开发具有更高性能的材料。原子层沉积(ALD)是一种可足以应对这些挑战的独特技术,它所沉积的薄膜具有极佳的均匀性、台阶覆盖率和(对薄膜图形的)保形性。介绍了原子层沉积技术原理、新一代逻辑组件所面临的课题、原子气相沉积技术AVD及原子层沉积设备现状。