Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

GOS+MU:一种查询对象选择新方法

在分析单一MU(Most Uncertainty)采样缺陷的基础上,提出一种"全局最优搜寻"方法 GOS(Global Optimal Search),并结合MU共同完成查询选择。GOS+MU方法中,GOS着眼全局寻找目标,在应用环境能提供的训练样本数量有限、分类器受训不充分时,该方法选择的对象学习价值高,能快速推进分类器学习进程;MU则能够在GOS采样失效情形下,利用分类器当前训练成果,选择查询不确定性最强的样本补充训练集。通过对网络商品的用户评论进行分类仿真,并比较其他采样学习方法的效果,证明了GOS+MU方法在压缩学习成本、提高训练效率方面的有效性。     

面向电信承载网的监控系统设计与实现

面对电信承载网连接的日益增长的海量终端设备，运营商需要结合网络拓扑对终端设备产生的数据进行高效的汇聚统计、异常分析、故障定位处理等操作。针对已有系统存在的操作困难、分析效率低等问题，设计与实现了一个面向电信承载网的高效监控系统，提供实时与离线数据分析和多维可视化分析的能力。对网管、认证、终端等系统及设备采集的数据进行结构化存储，对采集的数据进行拓扑相关性和时间序列方法分析，根据分析结果实现基于动态阈值控制的异常实时告警、定位等操作，并提供多维度可视化分析对网络状态进行实时监控。实际应用结果表明，该系统性能优异，具有良好交互性，能较好地满足承载网运维人员业务分析需求。     

Effect of microstructure on the fatigue crack growth behaviour of a near-α Ti alloy

Fatigue crack growth behaviour of Ti–6Al–2Zr–1.5Mo–1.5V (VT-20 a near-α Ti alloy) was studied in lamellar, bimodal and acicular microstructural conditions. Fatigue crack growth tests at both increasing and decreasing stress intensity factor range values were performed at ambient temperature and a loading ratio of 0.3 using compact tension samples. Lamellar and acicular microstructures showed lower fatigue crack growth rates as compared to the bimodal microstructure due to the tortuous nature of cracks in the former and the cleavage of primary α in the latter. The threshold stress intensity factor range was highest for acicular microstructure.     

用CPLD实现SRAM工艺FPGA的安全应用

提出了一种利用CPLD产生的伪随机码来加密SRAM工艺FPGA的方法,并详细介绍了具体的电路和VHDL代码。     

Attribute Allocation and Retrieval Scheme for Large-Scale Sensor Networks

Wireless sensor network is an emerging technology that enables remote monitoring of large geographical regions. In this paper, we address the problem of distributing attributes over such a large-scale sensor network so that the cost of data retrieval is minimized. The proposed scheme is a data-centric storage scheme where the attributes are distributed over the network depending on the correlations between them. The problem addressed here is similar to the Allocation Problem of distributed databases. In this paper, we have defined the Allocation Problem in the context of sensor networks and have proposed a scheme for finding a good distribution of attributes to the sensor network. We also propose an architecture for query processing given such a distribution of attributes. We analytically determine the conditions under which the proposed architecture is beneficial and present simulation results to demonstrate the same. To the best of our knowledge, this is the first attempt to determine an allocation of attributes over a sensor network based on the correlations between attributes.     

一维长序DFT的协处理阵列结构设计与实现

文章针对一维长序DFT计算问题，分析其计算结构以及算法的并行性，提出一种阵列协处理结构．并分析这种协处理机结构上DFT计算的组织及具体实施算法步骤和方法，并对这种协处理阵列结构上运行的DFT进行复杂性分析。这对计算DFT专用集成协处理结构芯片开发，提高专用嵌套系统性能非常实用。     

没有SDC的(t，n)门限秘密共享方案

利用椭圆曲线离散问题对数问题的难解性,给出了基于椭圆曲线密码体制的(t,n)门限秘密共享方案。基于门限秘密共享方案一般分为需要SDC和不需要SDC两类,在分布式环境下,一个被所有成员信任的SDC并不存在,不需要SDC的门限秘密共享方案的安全性得到很大的提高,该方案中由组成员共同生成群公钥和私有密钥。并给出了当新成员加入时,无SDC下的周期密钥分片的更新方案。还给出了一个本方案数据实例,最后对本方案的安全性进行了分析。     

一个完善的秘密分享方案

可验证秘密分享在实用密码学领域内是一个非常重要的工具,它在密钥管理协议、门限或分布式签名协议、电子商务、多方安全计算及团体式密码系统等许多方面都有极为广泛的应用。针对一类突发事务须及时、安全解决的特点, 利用离散对数问题的难解性,在假设初始化阶段和秘密恢复阶段始终有一位值得信赖的分发者参与的情况下,提出了一个可公开验证的门限秘密分享方案。