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排序方式: 共有2223条查询结果,搜索用时 31 毫秒
1.
Abidur Rahman Makoto Kobayashi Kotaro Sugimoto Yuta Endo Manabu Kojima Shigenori Furukawa Takafumi Watanabe Shu Soeda Yuko Hashimoto Keiya Fujimori Hideki Chiba 《International journal of molecular sciences》2021,22(7)
Background: Within the claudin (CLDN) family, CLDN12 mRNA expression is altered in various types of cancer, but its clinicopathological relevance has yet to be established due to the absence of specific antibodies (Abs) with broad applications. Methods: We generated a monoclonal Ab (mAb) against human/mouse CLDN12 and verified its specificity. By performing immunohistochemical staining and semiquantification, we evaluated the relationship between CLDN12 expression and clinicopathological parameters in tissues from 138 cases of cervical cancer. Results: Western blot and immunohistochemical analyses revealed that the established mAb selectively recognized the CLDN12 protein. Twenty six of the 138 cases (18.8%) showed low CLDN12 expression, and the disease-specific survival (DSS) and recurrence-free survival rates were significantly decreased compared with those in the high CLDN12 expression group. We also demonstrated, via univariable and multivariable analyses, that the low CLDN12 expression represents a significant prognostic factor for the DSS of cervical cancer patients (HR 3.412, p = 0.002 and HR 2.615, p = 0.029, respectively). Conclusions: It can be concluded that a reduced CLDN12 expression predicts a poor outcome for cervical cancer. The novel anti-CLDN12 mAb could be a valuable tool to evaluate the biological relevance of the CLDN12 expression in diverse cancer types and other diseases. 相似文献
2.
A novel CdS/CaFe2O4 (CS/CFO) heterogeneous p-n junction was created by thermal deposition of CaFe2O4 nanoparticles on CdS rods. The CS/CFO hetero-structured photocatalysts exhibited increasingly efficient visible light harvesting compared to the bare CdS. The CS/CFO composites also presented higher photocurrent and slower decay of photoluminescence, suggesting a better separation of the photo-generated electrons and holes. The photocatalytic H2 evolution quantity on the optimized CS/CFO composite from water in the presence of ethanol was up to 2200 μmol after 3-h visible light illumination, which is more than twice that of the pristine CdS. The chemical interaction between CdS and CaFe2O4 was confirmed by the shifts in the XPS peaks, which made it possible for the charge carriers to transfer across the p-n junction interface. This research highlights the importance of forming an interfacial p-n heterojunction between two semiconductors for efficient charge separation and improved photocatalytic performance. 相似文献
3.
Roberto Zefferino Claudia Piccoli Sante Di Gioia Nazzareno Capitanio Massimo Conese 《International journal of molecular sciences》2021,22(5)
Connexin- and pannexin (Panx)-formed hemichannels (HCs) and gap junctions (GJs) operate an interaction with the extracellular matrix and GJ intercellular communication (GJIC), and on account of this they are involved in cancer onset and progression towards invasiveness and metastatization. When we deal with cancer, it is not correct to omit the immune system, as well as neglecting its role in resisting or succumbing to formation and progression of incipient neoplasia until the formation of micrometastasis, nevertheless what really occurs in the tumor microenvironment (TME), which are the main players and which are the tumor or body allies, is still unclear. The goal of this article is to discuss how the pivotal players act, which can enhance or contrast cancer progression during two important process: “Activating Invasion and Metastasis” and the “Avoiding Immune Destruction”, with a particular emphasis on the interplay among GJIC, Panx-HCs, and the purinergic system in the TME without disregarding the inflammasome and cytokines thereof derived. In particular, the complex and contrasting roles of Panx1/P2X7R signalosome in tumor facilitation and/or inhibition is discussed in regard to the early/late phases of the carcinogenesis. Finally, considering this complex interplay in the TME between cancer cells, stromal cells, immune cells, and focusing on their means of communication, we should be capable of revealing harmful messages that help the cancer growth and transform them in body allies, thus designing novel therapeutic strategies to fight cancer in a personalized manner. 相似文献
4.
本文介绍了薄膜隧道发光结的基本结构、发光机理,阐述了其I-V特性中的负阻现象。简单介绍了MIM结构负阻的几种解释,根据热像仪照片和低温测试结果分析,再结合Dearmaley导电模型,我们提出了MIM负阻的物理模型,理论与实验符合较好,最后分析了负阻现象的应用前景。 相似文献
5.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
6.
将多块网格技术运用于三维T型管复杂流场的网格生成,利用不完全乔列斯基预处理共轭梯度,双共轭梯度方法求解N-S方程的离散方程。计算表明上述方法有良好的收敛特性,适合于诸如T型管等复杂流动的分析。 相似文献
7.
Roberto Leoni Bruno Buonomo Gabriella Castellano Francesco Mattioli Guido Torrioli Luciana Di Gaspare Florestano Evangelisti 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):44-47
We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers. 相似文献
8.
9.
This paper introduces and evaluates a new class of knowledge model, the recursive Bayesian multinet (RBMN), which encodes the joint probability distribution of a given database. RBMNs extend Bayesian networks (BNs) as well as partitional clustering systems. Briefly, a RBMN is a decision tree with component BNs at the leaves. A RBMN is learnt using a greedy, heuristic approach akin to that used by many supervised decision tree learners, but where BNs are learnt at leaves using constructive induction. A key idea is to treat expected data as real data. This allows us to complete the database and to take advantage of a closed form for the marginal likelihood of the expected complete data that factorizes into separate marginal likelihoods for each family (a node and its parents). Our approach is evaluated on synthetic and real-world databases. 相似文献
10.
J. A. Jimenez-Tejada J. A. Lopez-Villanueva P. Cartujo J. Vicente J. E. Carceller 《Journal of Electronic Materials》1992,21(9):883-886
The energy levels introduced by Pt in silicon have been measured in a non-abruptp
+-n junction using constant-capacitance thermal-emission rate measurements and a numerical simulation of high frequency-capacitance.
Two levels have been detected with activation energies of:E
c -E
T = 0.22 eV with acceptor character andE
T -E
v = 0.34 eV with donor character. The sample preparation and diffusion of Pt is similar to previous works in which an acceptor
levelE
c -E
T = 0.34 eV was found instead of or besides a donorlike levelE
T -E
v = 0.34 eV. Our numerical calculation of the shallow-impurity profile points to the existence of a gradual transition near
the metallurgical junction for these samples. We have demonstrated that the well-known model of an abrupt junction is not
appropriate for these types of junctions, and could lead to errors in the location attributed to the detected levels. Simulation
of the electrical behavior leads to the non-existence of the acceptor levelE
c −E
T = 0.34 eV located in then-side of the junction. 相似文献