基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

Temperature Characteristics of BJMOSFET

The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.     

BJMOSFET 静态特性的解析模型及模拟分析

建立了新型半导体功率器件－双极型压控晶体管（BJMOSFET）的直流解析模型,通过提取模型参数,运用电路模拟软件PSPICE的多瞬态分析法对BJMOSFET的直流特性进行了模拟,分析得出这种新型器件在相同结构参数和同等外界条件下与传统MOSFET相比,电流密度提高30％－40％。     

Research of BJMOSFET frequency characteristics

The parasitic capacitance effect and its influence to the performance have been investigated in Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor （BJMOSFET）. The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient characteristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.     

深亚微米全耗尽SOI BJMOSFET的二维电流模型

建立了深亚微米全耗尽SOI BJMOSFET器件的二维电流模型;运用HSPICE软件,模拟得到其电流-电压特性曲线.与相同条件下的全耗尽SOI MOSFET相比,该新型SOI器件具有更大的电流输出,是一种直流性能优异的新型SOI器件.     

BJMOSFET温度特性分析及计算机模拟

对兼有双极型和场效应型两种器件特点的双极MOS场效应晶体管(BJMOSFET)的电流和阈值电压的温度特性进行了详细分析．推导出它们随温度变化率的解析表达式。建立BJMOSFET的直流小信号模拟分析等效电路和频率特性模拟分析等效电路,采用通用电路仿真软件PSpice9,对BJMOSFET的输出特性、瞬态特性和幅频特性随温度的变化进行了计算机模拟,得到了随温度变化的特性曲线,并且理论分析与计算机模拟取得了一致的结果。相对传统MOSFET,证明了BJMOSFET具有较好的温度特性。