GaAs FET辐射退化研究

低噪声ＧａＡｓ ＦＥＴ和功率ＧａＡｓ ＦＥＴ经中子辐射都未发生致命性的通或断失效，直流偏置伏态下，其失效模式仅仅表现为源漏饱和电流ＩＤＳＳ的退化降低，据此提出了ＩＤＳＳ退化失效与快中子注量φｎ之间的解析关键式ｌｎｙ＝ａ＋ｂｌｎφ。     

5Cr21Mn9Ni4WNb2N奥氏体耐热钢晶界碳化物

5Cr21Mn_9Ni_4WNb_2N耐热钢锻造后在1200℃以上加热时，NbC聚集成大块，在1200℃以下加热时，NbC薄膜（片）的析出倾向随加热温度降低而增大，1130℃及其以下加热时，粒状和细片状M_(23)C_6随加热温度降低而增多，而且NbC块可作为碳源退化成M_(23)C_6颗粒，过高或过低温度的锻造加热，因晶界NbC块过大或晶界NbC薄膜（片）过多而不利于锻造加工。     

扭、纵超声电机定子的设计研究

扭、纵超声电机的扭振模态和纵振模态达到共振频率简并对提高电机运行性能至关重要．必须进行精心设计。介绍一些基本设计原则和方法，编制了一维网络传输矩阵软件（UTD），同时使用有限元软件对电机定子进行设计。比较了两种软件的计算结果，说明了两个计算结果不同的原因。对实验用样机进行测试，该电机扭、纵共振频率差小于0．1kHz，简并良好。     

Spectral analysis of some independences on multiple-valued logical functions on their variables

There are many kinds of special relationships between multiple-valued logical functions and their variables, and they are difficult to be judged from their expressions. In this paper, some sufficient and necessary conditions of the independence and statistical independence of multiple-valued logical functions on their variables are given. Some conditions of algebraic independence of multiple-valued logical functions on some of their variables and the way to degenerate a function to the greatest extent are proposed, and some applications of these results are indicated. All the results are studied by using Chrestenson spectral techniques.     

复杂系统可靠性分析的功能参数树方法

功能参数树模型包括功能、性能指标和部件.它将复杂系统可靠性功能分解并映射到性能指标上,再将性能指标映射到部件上,依次构成树状模型.通过产品性能试验中得到的各性能指标,判断各功能(突发或退化)失效形式.突发失效,可直接利用部件可靠性计算系统可靠性.退化失效,可采用轨道曲线拟合法并基于指定退化临界值进行可靠性推断.     

SPECTRAL ANALYSIS OF SOME INDEPENDENCES OF MULTIPLE-VALUED LOGICAL FUNCTIONS ON THEIR VARIABLES

There are many kinds of special relationships between multiple-valued logical func-tions and their variables, and they are difficult to be judged from their expressions. In thispaper, some sufficient and necessary conditions of the independence and statistical independenceof multiple-valued logical functions on their variables are given. Some conditions of algebraicindependence of multiple-valued logical functions on some of their variables and the way to de-generate a function to the greatest extent are proposed, and some applications of these resultsare indicated. All the results are studied by using Chrestenson spectral techniques.     

电化学法降解硝基化合物的研究现状与发展趋势

阐述了电化学或电化学与其他方法联合使用处理硝基化合物的机理和方法。指出了三维电极电解法、电化学催化氧化法、电化学与超声波协同作用、TiO2光电催化法等各种电化学法处理硝基化合物的特点。展望了电化学法处理硝基化合物的发展趋势。     

Generalized Criteria of Volume Ignition for One‐Stage Exothermic Reations

A method of ignition conditions determination for any type of exothermic reaction is proposed. The method is based on the maximum temperatures equation for any kind of kinetic function, which was obtained using the integral equation for phase trajectories. In this case, the asymptotic ignition criterion is defined by the infinitely high sensitivity of maximum temperature to the change of parameters at the limit of ignition. Hence, the critical ignition conditions are determined by the presence of extreme points on the plane: parameter – maximal temperature. On the strength of these ideas, the universal algebraic set of equations for critical conditions calculation for arbitrary kinetic law of reaction product formation was obtained. The application of this method to calculation of the second order reactions allows to define the thermal explosion degeneration conditions and the regions of critical conditions existence. The maximum discrepancy between the results obtained with the results of numerical calculation does not exceed ten percent.     

变性淀粉在哈尔滨红肠中的应用研究

变性淀粉是天然淀粉经物理、化学或酶处理后,改变了理化性质而制得的一类淀粉。用变性淀粉代替天然淀粉添加到哈尔滨红肠中,可明显提高红肠的弹性和粘聚性,降低硬度和咀嚼性,对哈尔滨红肠的质构特性有明显改善。     

Temperature dependence of the conductivity in large-grained boron-doped ZnO films

The temperature dependence of the conductivity is investigated as a function of boron doping in large-grained, degenerate polycrystalline ZnO films prepared by low-pressure chemical vapor deposition. Carrier transport in undoped and lightly doped films is mainly controlled by the grain boundary; field emission through grain boundaries limits the conductivity below 90 K, while thermally activated thermoionic-field emission leads to an increase in the conductivity with the temperature near room temperature. In contrast, carrier transport in highly doped films is mainly governed by intra-grain scattering, which does not depend on the temperature for degenerate electron gases, limits the mobility below 120 K, whereas a metallic behavior (decrease in conductivity with increasing temperature) is observed at room temperature, which is linked to the ionized impurity scattering. The transition between the “semiconductor”-like and metallic-like behavior at room temperature takes place for a film with carrier concentration between 6×10¹⁹ and 9×10¹⁹ cm⁻³.