MASH ΣΔ modulators with a noise-shaped two-step ADC in the second stage

In this paper, a multi-stage noise-shaping (MASH) sigma-delta (ΣΔ) modulator is proposed to be used in low oversampling ratio (OSR) applications. It utilizes a noise-shaped two-step (NSTS) analog-to-digital converter (ADC) in the second stage and benefits its inter-stage gain to provide an extra attenuation of the quantization noise such that the same specifications of a traditional modulator are achieved but with a lower order of noise-shaping. Furthermore, large number of bits is resolved in the second stage while equal number of comparators is used. Compared to the single-loop NSTS ADC, in the proposed structure, the complexity problem of the feedback path and coefficient spreading are eliminated. As an example, a MASH 2-1 sigma-delta modulator has been designed and simulated in a 90 nm CMOS process using Spectre. The achieved resolution is 13.44 effective number of bits in 6.25 MHz signal bandwidth while consuming 19.6 mW power from a single 1 V supply. The sampling frequency is 100 MHz and the simulated figure of merit is 141 fJ/conv-step which shows the efficiency of the proposed modulator.     

MQW EA调制器用于短脉冲光子源驱动条件的优化设计

本文分析了多量子阱电吸收调制器（MQW EAM）的非线性损耗特性,从时域和频域两个方面讨论了MQW EAM驱动条件与输出光脉冲特性的关系.数值计算结果证明EAM产生的脉冲形状比较接近Gauss脉冲,具有较小的啁啾,接近于变换限的光脉冲,十分适用于高速时分复用系统.     

基于同一外延层结构的10Gb/s单片集成光发射模块

利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈(DFB)半导体激光器单片集成光发射模块.在器件中引入增益耦合机制以提高单模成品率,并采用感应耦合等离子体干法刻蚀技术以降低调制器电容.集成器件阈值电流为12mA,在-2V偏置时的消光比为15dB,器件的小信号调制带宽超过10GHz.在10Gb/s调制速率下经过35km单模光纤传输后,误码率为10-12时的功率代价小于1dB.     

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at －2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e－12 after transmission through 35km single mode fiber.     

Tunable,Grating-Gated,Graphene-On-Polyimide Terahertz Modulators

An electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth is presented and it is exploited to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal grating used as a gate electrode, with an HfO₂/AlO_x gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. The authors achieve 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9–2.7 THz range. The modulator is then integrated with a multimode THz QCL. By adjusting the modulator operational bandwidth, the authors demonstrate that the graphene modulator can partially compensate the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the operational range, with 98 equidistant optical modes and a spectral coverage ~1.2 THz. This paves the way for applications in the terahertz, such as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and metrological tools for spectroscopy at THz frequencies.     

Recent Progress in Silicon Electro-optic Modulators for High Speed Applications

Silicon-based high-speed electro-optical modulator is the key component of silicon photonics for future communiction and interconnection systems. In this paper, introduced are the optical mudulation mechanisms in silicon, reviewed are some recent progresses in high-speed silicon modulators, and analyzed are advantages and shortages of the silicon modulators of different types.     

基于电吸收调制晶体的超短光脉冲产生的数值模拟

数值模拟了基于电吸收调制晶体（ＥＡＭ）的超短光脉冲源的输出脉冲宽度及消光比与外加反向偏压、射频信号幅度之间的变化关系。数值模拟结果表明,在重复率为１０ＧＨｚ情况下,可以获得的最小脉宽约为１３ｐｓ,其消光比大于２０ｄＢ,脉冲波型接近ｓｅｃｈ＾２孤子波型。因此,基于ＥＡＭ的超短光脉冲源可以满足２０Ｇｂ／ｓ的光时分复用（ＯＴＤＭ）系统的需求,也适合于超长距离的光孤子通信系统。     

存储器管理部件的设计实现

主要介绍了一款32b的RISC结构CPU的存储器管理部件的设计。在对存储器管理部件的原理，存在的必要性等方面进行介绍的基础上，对设计的存储器管理部件的结构，3种地址转换机制：实地址转换、块地址转换及段页式地址转换，以及部分单元电路等方面进行了详细的介绍。     

EA4T钢冷却过程中脉冲电流对组织与性能的影响

针对EA4T钢车轴淬火过程中心部会析出大量大尺寸先共析铁素体的问题,采用脉冲电流辅助加热方法,研究冷却过程中脉冲电流与先共析铁素体析出的关系。EA4T钢试样加热至900℃保温20min后,以25℃/min冷速冷却,并在冷却过程中通入一定参数的脉冲电流。结果表明,由于脉冲电流辅助加热的热效应,推迟了相变过程中先共析铁素体在奥氏体晶界处的析出。与未通脉冲电流的试样相比,先共析铁素体的含量降低,尺寸减小,试样的强度、伸长率及冲击值有所提高。     

平流层飞艇特征结构配置增稳设计

对飞艇非线性六自由度模型进行线性化,得到了飞艇的状态方程,并将其分为纵向和侧向两组.以飞艇非线性模型为基础对飞艇自然特性进行了分析,对飞艇的纵向运动及侧向运动的稳定性进行了分析仿真.运用基于线性矩阵不等式（LMI）的特征结构配置方法对平流层飞艇进行增稳控制律设计,不仅实现了特征值的配置,同时确定闭环系统特征值对应的特征向量和广义特征向量.