铁电存储器的研究进展

介绍了铁电存储器的存储原理,同时对两种铁电存储器(铁电随机存取存储器和铁电场效应晶体管存储器)的研究进展、当前存在的问题以及我国目前在这一领域的研究现状进行了简单介绍,并对今后的技术发展进行了展望。     

Imprint characteristics of Pt/Pb(Zr,Ti)O3/Ir capacitors

The dynamic and static imprint characteristics of PZT thin film capacitors prepared by a two step reactive sputtering method were studied. The imprint is caused by an internal field generated by the trapping of electronic charges at interfacial layers that are injected, from the electrode. When unipolar pulse stressing is applied to the PZT capacitor, the cumulative time rather than the pulse cycles accounts more for the dynamic imprint characteristics. The amount of voltage shift in the polarization(P)-voltage(V) curve is reduced when the unipolar pulses are applied at elevated temperatures or a high amplitude pulse is applied. For static imprint stressing, the voltage shift increases with the temperature and is readily removed by application of bipolar pulses to the imprinted PZT capacitor at elevated temperatures. A method to estimate the lifetime limitation as a result of imprint failure in 1T/1C FRAMs is proposed.     

嵌入式Linux下的FRAM驱动程序设计

针对铁电存储器(FRAM)在基于ARM9的嵌入式Linux系统下设备节点的读写及应用问题,研究Linux系统的驱动设计,分析FRAM的工作原理和硬件特性,提出基于Linux系统标准驱动架构与铁电底层预处理、读写、控制等工作机制相结合的FRAM驱动程序设计与实现流程。底层实现采用内核级基于FRAM的寻址方式,结果证明了该驱动在相应数据存储、传输中的可行性与稳定性。     

Temperature dependence of the dielectric dispersion and ferroelectric properties of neodymium doped bismuth titanate ceramics

Nd-doped bismuth titanate Bi_{4 − x} Nd _x Ti₃O₁₂ ceramics (x = 0–1.0) were prepared by the solid state reaction method. The temperature dependence of the dielectric dispersion and ferroelectric properties were investigated. With the increase of the Nd substitution for Bi ion, the Curie temperature decreased and the corresponding dielectric constant peak broadened. In addition, the strong low-frequency dielectric dispersions were exhibited. The Nd doping decreases the temperature dependence of the ac conductivity and increases the temperature dependence of the remanent polarization, which is caused by the induced polarization by defects, such as bismuth and oxygen vacancies.     

Interdisciplinary safety analysis of complex socio-technological systems based on the functional resonance accident model: An application to railway trafficsupervision

This paper presents an application of functional resonance accident models (FRAM) for the safety analysis of complex socio-technological systems, i.e. systems which include not only technological, but also human and organizational components. The supervision of certain industrial domains provides a good example of such systems, because although more and more actions for piloting installations are now automatized, there always remains a decision level (at least in the management of degraded modes) involving human behavior and organizations. The field of application of the study presented here is railway traffic supervision, using modern automatic train supervision (ATS) systems. Examples taken from railway traffic supervision illustrate the principal advantage of FRAM in comparison to classical safety analysis models, i.e. their ability to take into account technical as well as human and organizational aspects within a single model, thus allowing a true multidisciplinary cooperation between specialists from the different domains involved.A FRAM analysis is used to interpret experimental results obtained from a real ATS system linked to a railway simulator that places operators (experimental subjects) in simulated situations involving incidents. The first results show a significant dispersion in performances among different operators when detecting incidents. Some subsequent work in progress aims to make these “performance conditions” more homogeneous, mainly by ergonomic modifications. It is clear that the current human-machine interface (HMI) in ATS systems (a legacy of past technologies that used LED displays) has reached its limits and needs to be improved, for example, by highlighting the most pertinent information for a given situation (and, conversely, by removing irrelevant information likely to distract operators).     

基于IAR EW430开发环境的FRAM应用研究

本文基于TI的MSP-EXP430FR5739 LaunchPad硬件评估套件和IAR EW430 IDE开发环境,研究了MSP430FR5739型MCU的FRAM分区配置方法,分别采用程序代码关键字声明法及面对复杂应用满足更高定制要求时修改XLINK配置文件法共两种方法实现了分区调配,编写了相应测试程序进行实验,验证结果达到了预期.同时对实际应用中FRAM分区后应进行MPU保护做出阐述,本文提出的方法可用于MSP430FR系列其他型号MCU器件的FRAM调配.     

铁电随机存储器的研究进展

铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器．以其高密度、高速度、非易失性及抗辐射性而大大优于目前任何一种半导体存储器。该文介绍了铁电存储器的存储原理、特点、基本存储单元、研究进展、应用及存在的问题，并指出1T结构的铁电随机存储器(FRAM)将会成为下一代随机存储器。     

铁电存储器FM24C16原理及其在多MCU系统中的应用

FM24C16是美国Ramtron公司以铁电晶体为材料生产的铁电存储器(FRAM)，和一般的EEPROM比较，其具有无写延时、超低功耗、无限次写入等超级特性，特别适合在那些对写入时间和次数有较高要求的应用场合，而且其与单片机接口电路简单，应用方便．本文对FM24C16的工作原理、应用电路及应用程序做了比较详细的介绍．     

基于单片机AT89C52的漏磁检测实验系统开发

本文介绍了基于单片机技术的漏磁检测系统。首先介绍了漏磁检测的原理,然后结合电子电路技术,单片机技术,开发了一套漏磁检测实验系统。该系统包括信号的采集,预处理,模/数转换,数据结果存储,数据串口发送。单片机的软件系统采用模块化设计,分为数据采集、数据存储、数据串口发送模块等。     

Ferroelectric Pb5Ge3O11 MFMOS capacitor for one transistor memory applications

Abstract

The basic mechanism for an one transistor memory device has been studied. Many ferroelectric materials such PbZr_xTi_1?xO₃ (PZT), SrBi₂Ta₂O₉ (SBT), Pb₅Ge₃O₁₁ (PGO) etc. were analyzed for this application. Because of its low remanent polarization and low dielectric constant, the c-oriented Pb₅Ge₃O₁₁ thin film was selected for one-transistor memory applications. Pb₅Ge₃O₁₁ thin films have been prepared using MOCVD and RTP (Rapid Thermal Process) post-annealing. Lead bis-tetramethylheptadione [Pb(thd)₂] and germanium ethoxide [Ge(OC₂H₅)₄] were used as the precursors. The Pb₅Ge₃O₁₁thin films were deposited onto Ir/Ti/SiO₂/Si wafers to measure their compositions, phase formation, microstructure and ferroelectric properties. The extremely highly c-oriented Pb₅Ge₃O₁₁ thin films showed good ferroelectric and electrical properties. A 300 nm thick PGO thin film exhibited a square and saturated hysteresis loop with 2Pr of 3.98 μC/cm², 2Ec of 128 KV/cm at an applied voltage 5V, leakage current of 5.1×10^?7 A/cm² at 100 KV/cm, and dielectric constant of close to 36. The c-axis oriented Pb₅Ge₃O₁₁ thin film also exhibited very good retention properties. The experimental results showed that a Pb₅Ge₃O₁₁ MFMOS gate stack is suitable for one-transistor memory applications.