VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Nd:YVO4/KTP全固化倍频激光器的研究

介绍了两种腔型结构不同的Nd:YVO4/KTP全固化倍频绿光激光器,对腔结构参数进行了优化计算;在相同的实验条件下,对这两种腔的输出和稳定性等特性进行了比较和深入分析,在此基础上得出结论,提出改进措施。该折叠腔方案已进入产品化阶段。     

Determining the Instantaneous Effective Energy of x-Ray Tube Bremsstrahlung

A method is described for determining the instantaneous effective energy of x-ray tube brehmsstrahlung by means of two semiconductor detectors employing epitaxial GaAs structures and a measurement circuit, which together determine the effective energy with an error of 5% in the range 20–80 keV in the presence of nonlinearity in the detector response.     

测距仪中新型的脉冲激光光源

针对现有测距仪中脉冲激光器存在寄生多脉冲的问题，提出并实现新型的采用同步泵浦声光调Q方法的测距仪用激光器、消除了寄生脉冲并提高了激光器的峰值功率。     

退火对GaAs窗口晶体断裂模数的影响

LEC GaAs晶片经高温退火后，残余应力得以部分释放；从而减小残余应力诱生断裂的可能性，提高了GaAs晶体的断裂模数。原生GaAs晶片加工的样品的断裂模数平均值约为135MPa，经退火的GaAs晶片加工样品的断裂模数平均值更高，约为150MPa，断裂模数最高值达163MPa。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

新型微波有源滤波器综合方法

本文给出了一种新颖的微波有源滤波器的拓扑结构及综合方法，并对有源滤波电路进行了计算机模拟，结果表明本文给出的微波有源滤波器电路具有优良的的窄带滤波特性，通带内正向增益大于１０ｄＢ，带外抑制大于３０ｄＢ。     

半导体激光器列阵有源区电场随电流变化的定点测量

采用连续波电光检测法，对ＧａＡｓ／ＧａＡｌＡｓ双异质结激光器列阵有源区进行定点测量，实验结果反映了发光区内及发光区外电场随电流变化的不同规律。文中对实验结果给出了合理解释。     

GaAs Mach－Zehnder型光波导开关／调制器

采用非对称Ｘ结耦合器代替传统的Ｙ分支器，研制了ＧａＡｓＭａｃｈ－Ｚｅｈｎｄｅｒ型２×２光开光，得到了小于－２２．４ｄＢ的串音比和１２Ｖ左右的开关电压，器件的波导传输损耗小于７ｄＢ／ｃｍ。预计该器件可广泛应用于ＧａＡｓ开关列阵及高速光调制等领域。