Effects of silicon nitride diffusion barrier on germanium MOS capacitors with HfON gate dielectrics

MOS capacitors with hafnium oxynitride (HfON) gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method. A large amount of fixed charges and interface traps exist at the Ge/HfON interface. HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing. A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier. Using this method, well behaved capacitance-voltage and current-voltage characteristics were obtained. Finally hystereses are compared under different process conditions and possible causes are discussed.     

ZnS上HfON保护膜及增透膜系的制备和性能研究

用氮氧化铪薄膜作为CVDZnS衬底的保护膜、由YbF3和ZnS组成的增透膜系分别在CVDZnS的两面制备了保护膜和增透膜,研究了镀膜前后CVDZnS在8~12 μm波段的光学性能,单面镀制增透膜之后CVDZnS在此波段的平均透过率由未镀膜前的74%提高到了82%,峰值透过率大于83.5%。在CVDZnS上镀制HfON保护膜后,其8~12 μm波段透过率没有明显的降低,同时硬度测试表明HfON薄膜的硬度约为11.6 GPa,远大于衬底CVDZnS的硬度。胶带实验和泡水试验表明,制备的保护膜和增透膜均和衬底有     

溅射沉积HfON∶Tb薄膜的光致发光

用直流溅射法沉积了HfON∶Tb薄膜. 对样品在空气中进行了不同温度的退火处理. 用荧光光谱仪测试了样品的光致发光,在可见光区域观测到了强的发光峰. 发现随着样品退火温度的变化,不同位置发光峰的强度有明显不同变化，并有微弱的蓝移. 分析了发光机理,得出可见光区的发光是由于Tb离子产生的. 发光峰的强度和Tb离子的浓度有关系，在达到一定值以后会发生浓度淬灭效应.     

High-quality high-k HfON formed with plasma jet assisted PVD process and application as tunnel dielectric for flash memories

We demonstrate low-trap-density HfON film made by the molecular-atomic deposition (MAD) technique, which is an Ar/N₂ plasma jet assisted physical vapor deposition process. This high-k HfON can be deposited on top of the nearly trap-free MAD-Si₃N₄ to form a single-side crested tunnel barrier. The Al/(HfON-Si₃N₄)/Si capacitor structure with HfON/Si₃N₄ stack as the tunnel barrier demonstrates steeper I-V slope than that of a single layer SiO₂ with the same EOT, and is readily applicable to improve the programming speed and data retention of flash memories.     

先进的Hf基高k栅介质研究进展

随着CMOS器件特征尺寸的不断缩小,SiO2作为栅介质材料已不能满足集成电路技术高速发展的需求,利用高k栅介质取代SiO2栅介质成为微电子技术发展的必然.但是,被认为最有希望替代SiO2的HfO2由于结晶温度低等缺点,很难集成于现有的CMOS工艺中,新型Hf基高k栅介质的研究成为当务之急.据报道,在HfO2中引入N、Si、Al和Ta可大大改善其热力学稳定性,由此形成的高k栅介质具有优良的电学特性,基本上满足器件的要求.本文综述了这类先进的Hf基高k栅介质材料的最新研究进展.     

氮化硅扩散阻挡层在采用HfON栅介质的Ge MOS 电容中的作用

MOS capacitors with hafnium oxynitride（HfON）gate dielectrics were fabricated on Ge and Si substrates using the RF reactive magnetron sputtering method.A large amount of fixed charges and interface traps exist at the Ge/HfON interface.HRTEM and XPS analyses show that Ge oxides were grown and diffused into HfON after post metal annealing.A Si nitride interfacial layer was inserted between Ge and HfON as diffusion barrier.Using this method,well behaved capacitance–voltage and current–voltage characteristics were obtained.Finally hystereses are compared under different process conditions and possible causes are discussed.