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1.
A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers
(free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was
taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical
experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio
calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were
calculated to show the facility of the model. 相似文献
2.
J. S. Kim D. G. Seiler R. A. Lancaster M. B. Reine 《Journal of Electronic Materials》1996,25(8):1215-1220
Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg1−xCdxTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained
within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with
the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the
alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (Eg ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 102 m2Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering.
A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed
electron mobility and is found to be of the order of 10−4 of the mass of a free electron. 相似文献
3.
Herbert S. Bennett 《Journal of research of the National Institute of Standards and Technology》2007,112(4):209-221
In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 1016 cm−3 and 1019 cm−3. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q2/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations. 相似文献
4.
A. Hori 《Thin solid films》2007,515(10):4480-4483
Electroluminescence (EL) spectral intensity in the high-brightness blue and green InGaN single-quantum-well (SQW) diodes has been comparatively studied over a wide temperature range and as a function of injection current. When the necessary forward bias conditions to get a certain current level are different, it is found that the anomalous EL quenching previously observed below 100 K for the SQW diodes strongly changes and shows a striking difference between the blue and green SQW diodes. This unusual EL evolution pattern is attributed to both internal and external fields, suggesting the importance of the internal piezoelectric field effects on the efficient carrier capture processes by localized tail states within the SQW under the presence of high-density misfit dislocations. 相似文献
5.
6.
Solar cells based on hydrogenated amorphous silicon are now made from a variety of materials including alloys and microcrystalline
films. Research aimed at improving cell efficiency should emphasize studies of alloys and metastable defects. We discuss several
research topics related to the growth, structure, and electronic properties of these materials, which should lead to improved
photovoltaic devices. 相似文献
7.
S. J. C. Irvine A. Stafford M. U. Ahmed A. Brown H. Kheyrandish 《Journal of Electronic Materials》1997,26(6):723-727
The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe,
measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from
an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 × 10−4 atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth
rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted
Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum
growth rate is around 1 AU/ s with very little photo-enhancement, except at 300°C. Secondary ion mass spectroscopy analysis
of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 × 1019 atoms cm−3 for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the
incorporation of hydrogen and passivation of acceptor doped material. 相似文献
8.
Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature
Density
-
C
p
Specific heat
-
Kinematic viscosity
-
Dynamic viscosity=
-
Thermal diffusivity
-
Thermal conductivity=Cp
-
Volumetric thermal expansion coefficient
-
Surface tension
-
d/dT
Temperature coefficient of surface tension
-
g
Gravitational acceleration
-
T
Temperature
-
T
Temperature difference
-
L
Characteristic dimension 相似文献
9.
Ziyi Guo Junyao Zhang Xu Liu Lu Wang Lize Xiong Jia Huang 《Advanced functional materials》2023,33(46):2305508
Both photodetectors (PDs) and optoelectronic synaptic devices (OSDs) are optoelectronic devices converting light signals into electrical responses. Optoelectronic devices based on organic semiconductors and halide perovskites have aroused tremendous research interest owing to their exceptional optical/electrical characteristics and low-cost processability. The heterojunction formed between organic semiconductors and halide perovskites can modify the exciton dissociation/recombination efficiency and modulate the charge-trapping effect. Consequently, organic semiconductor/halide perovskite heterojunctions can endow PDs and OSDs with high photo responsivity and the ability to simulate synaptic functions respectively, making them appropriate for the development of energy-efficient artificial visual systems with sensory and recognition functions. This article summarizes the recent advances in this research field. The physical/chemical properties and preparation methods of organic semiconductor/halide perovskite heterojunctions are briefly introduced. Then the development of PDs and OSDs based on organic semiconductor/halide perovskite heterojunctions, as well as their innovative applications, are systematically presented. Finally, some prospective challenges and probable strategies for the future development of optoelectronic devices based on organic semiconductor/halide perovskite heterojunctions are discussed. 相似文献
10.
Xiaobin Zou Haikuan Liang Yan Li Yichao Zou Fei Tian Yong Sun Chengxin Wang 《Advanced functional materials》2023,33(18):2213807
Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors. 相似文献