Hot carrier magnetophonon spectroscopy of semiconductors in high magnetic fields up to 40 T

Hot carrier magnetophonon resonances of n-type Si, short channel InP and p-type InSb were investigated in pulsed high magnetic fields up to 40 T. Using a recently developed high resolution technique in pulsed high fields, many new features of the hot carrier-phonon interactions in high magnetic fields were found.     

InSb,GaSb, and GaInSb grown using trisdimethylaminoantimony

GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium (TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb. In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga_1-xIn_xSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between 1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all p-type with carrier concentrations of approximately 10¹⁷ cm³. Transmission electron diffraction studies indicate that the Ga_0.5In_0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This is the first report of ordering in GalnSb alloys.     

较大直径、低位错锑化铟单晶的研制

本文简要介绍了用ＴＤＫ－３６单晶炉拉制的较大直径（φ＝２５ｍｍ）、低位错（＜１００ｃｍ￣（－２））的锑化铟单晶的理论和实践。通过对晶体生长室内温场，特别是内外坩埚尺寸的调整及对循环水流量的控制，成功地拉制出较大直径、低位错的锑化铟单晶。     

PVInSb红外探测器的阻抗——频率特性分析

通过理论计算和实际测试，给出了ＰＶＩｎＳｂ红外探测器的低频阻抗－频率特性曲线，结合检测阻抗／动态电阻的方法和阻抗－频率特性曲线的变化规律，分析讨论了ＰＶＩｎＳｂ红外探测器的阻抗与动态电阻的异同，从而说明在涉及ＰＶＩｎＳｂ红外探测器的阻抗／动态电阻时，即使在低频范围也要具体考虑频率因素的影响。     

Thermophysical properties data on molten semiconductors

Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.Nomenclature Density - C _p Specific heat - Kinematic viscosity - Dynamic viscosity= - Thermal diffusivity - Thermal conductivity=C_p - Volumetric thermal expansion coefficient - Surface tension - d/dT Temperature coefficient of surface tension - g Gravitational acceleration - T Temperature - T Temperature difference - L Characteristic dimension     

Interface trap effect on the transient characteristics of a photovoltaic InSb infrared detector

The transient characteristics can be significantly affected by the interface trap. In order to reveal the intrinsic mechanism and provide some references for the design of detectors, the interface trap effect on the transient characteristics of a back-illuminated photovoltaic InSb infrared detector is studied with two-dimensional simulations. The relationships between interface traps and some key physical parameters, such as the hole concentration, the recombination rate and the electric field, are analyzed to reveal the intrinsic mechanisms of the influence of the interface traps on the transient characteristics. Studies show that with the increase of the interface trap density, the recombination rate and the electric field near the interface increase, the hole concentration decreases, and the “black holes” in current density distribution appear and move forward to the pn junction. And the transient photoresponse decreases with the increase of the interface trap density.     

一种基于InSb磁敏电阻器的接近开关

介绍了锑化铟(InSb)磁阻式接近开关的工作原理,设计了信号处理电路,并对其动态性能进行了测试.实验结果表明:径向间距为4 mm时,接近开关动作距离大于8 mm,回差距离小于0.06 mm,重复定位精度优于0.04mm,可适用于工作频率0～5 kHz范围内的铁磁性物质检测.该接近开关灵敏度高,开关动态特性较好,且结构简...     

InSb(110)弛豫表面电子态的计算

利用形式散射理论方法，采用最近邻的紧束缚模型计算了ＩｎＳｂ（１１０）弛豫表面的电子结构，给出了总体、局域、分波态密度和表面投影能带。通过分析其表面态的变化指出了表面发生弛豫的原因主要是阴阳离子的ｐ态电子的相互作用加强所产生的。     

InSb磁敏电阻脉冲涡流传感器的研究

脉冲涡流检测方法是涡流检测技术的一个新兴分支。因脉冲信号频带很宽,比单一频率正弦涡流衰减慢,其瞬态感应电压信号中就包含了有关缺陷的重要信息。本文分析了InSb磁敏电阻作为脉冲涡流检测元件的工作原理,设计了探头结构和调理电路,有效抑制了环境温度的干扰,并分析了应用InSb磁敏电阻的涡流探头检测金属裂纹特征的信息提取方法。实验结果表明,采用InSb磁敏电阻作为脉冲涡流检测传感器,具有较高的裂纹灵敏度,且可以较好地反映裂纹的深度。     

InSb-In共晶体薄膜磁阻式电流传感器

介绍一种用锑化铟—铟 (InSb -In)共晶体薄膜磁阻元件 (MR)制成的电流传感器 (MRCS) ,并设计了一种能较大幅度增大其输出电压的信号处理电路。当处理电路的电压增益为 80db ,待测的 5 0Hz交流电流在 40～ 110mA之间变化时 ,输出电压在约 1V至约 3 .5V范围内变化 ,并且两者之间有比较好的线性关系 ,标准偏差 <0 .0 2。输出信号电压与本底噪声之比是 (2 4～ 46 ) :1。