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1.
The paper concerns an analysis of an equilibrium problem for 2D elastic body with two semirigid inclusions. It is assumed that inclusions have a joint point, and we investigate a junction problem for these inclusions. The existence of solutions is proved, and different equivalent formulations of the problem are proposed. We investigate a convergence to infinity of a rigidity parameter of the semirigid inclusion. It is proved that in the limit, we obtain an equilibrium problem for the elastic body with a rigid inclusion and a semirigid one. A parameter identification problem is investigated. In particular, the existence of a solution to a suitable optimal control problem is proved. 相似文献
2.
Poly (linoleic acid)-g-poly(methyl methacrylate) (PLiMMA) graft copolymer was synthesized and characterized. PLiMMA graft copolymer was synthesized from polymeric linoleic acid peroxide (PLina) possessing peroxide groups in the main chain by free radical polymerization of methyl methacrylate. Later, PLiMMA was characterized by proton nuclear magnetic resonance (1H NMR), gel permeation chromatography (GPC), thermal gravimetric analysis (TGA) and differential scanning calorimetry (DSC) techniques. Furthermore, Au/PLiMMA/n-Si diode was fabricated for the purpose of investigating PLiMMA׳s conformity in diodes. The main electrical characteristics of this diode were investigated using experimental current–voltage (I–V) measurements in dark and at room temperature. Obtained results, such as sufficiently high rectifying ratio of 4.5×104, indicate that PLiMMA is a promising organic material for electronic device applications. 相似文献
3.
A self-assembly patterning method for generation of epitaxial CoSi2 nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n+-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO2 and 300 nm Si3N4. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi2 layer and a subsequent out-diffusion process to form the n+-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated. 相似文献
4.
Zs. T
kei D. Kelleher B. Mebarki T. Mandrekar S. Guggilla K. Maex 《Microelectronic Engineering》2003,70(2-4):358-362
Passivated single damascene copper SiO2 damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN. 相似文献
5.
Roberto Leoni Bruno Buonomo Gabriella Castellano Francesco Mattioli Guido Torrioli Luciana Di Gaspare Florestano Evangelisti 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2004,520(1-3):44-47
We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers. 相似文献
6.
Review: Modified Atmosphere Packaging and its effects on the microbiological quality and safety of produce 总被引:10,自引:0,他引:10
Carol A. Phillips 《International Journal of Food Science & Technology》1996,31(6):463-479
Modified Atmosphere Packaging and related technologies are increasingly used to extend shelf-life of fresh produce. This paper reviews the effect of such technology on the spoilage microbiological flora and food-borne pathogens which may be present in produce and also on the organoleptic properties of the product. 相似文献
7.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the
n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed
and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb
grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized
surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized
impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity
was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb
layers were studied by comparing their photoluminescence spectra at 4.5K. 相似文献
8.
Yukio Sato Tomohito Tanaka Fumiyasu Oba Takahisa Yamamoto Yuichi Ikuhara Taketo Sakuma 《Science and Technology of Advanced Materials》2003,4(6):137
SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping. 相似文献
9.
根据近年来的文献资料总结报道几种离子注入浅结制备技术,即:大角度偏转注入、分子离子注入、双离子注入,通过介质掩膜注入,注入固体源驱入扩散再分布、等离子体浸没离子注入(PIII)和反冲离子注入等。 相似文献
10.
Yasuo Koide T. Kawakami Masanori Murakami N. Teraguchi Y. Tomomura A. Suzuki 《Journal of Electronic Materials》1998,27(6):772-775
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe
grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage
(J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety
of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level
lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2. 相似文献