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排序方式: 共有192条查询结果,搜索用时 15 毫秒
1.
利用变温和变磁场霍尔测试对在空气室温环境长期存放的碲镉汞液相处延晶膜作了定期的检测,结果表明,晶膜的电学性质随时间有明显的改变,本文采用非均匀晶膜的层状模型对晶膜的不稳定性作了详细的分析。 相似文献
2.
采用N-InP衬底研制InGaAsP/InP激光器和DFB激光器在国内已报导过多次,本文介绍用P-InP衬底研制InGaAsP/InP平面埋层异质结构激光器和DFB-PFBH激光器,同时利用晶体生长和晶向的依赖关系,改进埋区的结构,使器件最高激射温度大于100℃。 相似文献
3.
通过对液相外延(LPE)生长的外延片不同处理方法的研究,摸索出一条利用扫描电子显微镜(SEM)来观测有源区厚度的有效方法──蒸金法,最优可观察有源区厚度20nm,对设计厚度为18nm结构来说[1],这是一种便利而有效的观察手段。 相似文献
4.
5.
S. L. Price H. L. Hettich S. Sen M. C. Currie D. R. Rhiger E. O. Mc Lean 《Journal of Electronic Materials》1998,27(6):564-572
With the goal of maximizing the yield of infrared focal plane arrays (IRFPAs), Santa Barbara Research Center’s (SBRC) Infrared
Materials Producibility Program (IRMP) has focused on assessing and improving the quality, yield, and throughput of CdZnTe
substrates. A baseline detector lot was fabricated to identify the critical drivers of IRFPA yield coming from the substrates
and to evaluate the quality and yield of the current vendor base for CdZnTe substrates. Substrate induced defects and impurities
that can potentially affect device performance and operability were carefully mapped out in detail on 44 × 67 mm2 size substrates, received from IRMP substrate vendors as well as SBRC. This paper will report on the correlations found between
this substrate characterization data base and the IRFPA level defect distributions. Key results from these correlation studies
are: (1) extended defects found on the substrates with the Nakagawa etch correlated well with responsivity reduction in the
final IRFPA; (2) cross-hatch patterns that were evident in the responsivity map correlated well with similar features seen
by x-ray topography on LPE double layers; and (3) a possible correlation of device performance (leakage current at 78K) with
copper and lithium impurities in the substrate. Recent initiatives toward improving the quality and yield of the substrate
growth process have focused on improving purity in the pre-growth charge preparation, modification of growth parameters to
reduce defects and scaling up of the vertical Bridgman growth process from its current 67 mm diameter boule size to 92 mm
diameter boules. Promising initial results from the large diameter boule growth process will be shown. The 92 mm diameter
CdZnTe boule (6 kg charge) shows two predominant single crystal grains encompassing 75% of boule volume. Defect characterization
of boules grown under baseline and modified conditions is discussed. 相似文献
6.
对红外透射光谱法测定HgCdTe液相外延材料纵向组分分布技术进行了深入的研究.红外透射光谱的理论计算采用了王庆学提出的组分分布模型,并考虑了光穿越组分梯度区时产生的干涉效应.通过测量同一样品在不同外延层厚度下的一组红外透射光谱,该方法的有效性得到了实验验证.进一步对组分模型中参数(即外延总厚度、组分互扩散区厚度、材料表面组分和HgCdTe层组分梯度)的拟合方法进行了讨论,并确定了各拟合参数的拟合精度.结果显示,该方法可作为测定HgcdTe液相外延材料组分特性的一种有效的测试评价技术. 相似文献
7.
E. P. G. Smith G. M. Venzor M. D. Newton M. V. Liguori J. K. Gleason R. E. Bornfreund S. M. Johnson J. D. Benson A. J. Stoltz J. B. Varesi J. H. Dinan W. A. Radford 《Journal of Electronic Materials》2005,34(6):746-753
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe
mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large
format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR)
double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The
HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared
detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching
demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using
wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy
and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication
of photolithographic mask dimensions. 相似文献
8.
9.
Changzhen Wang Steve Tobin Themis Parodos David J. Smith 《Journal of Electronic Materials》2006,35(6):1192-1196
The microstructure of p-n device structures grown by liquid-phase epitaxy (LPE) on CdZnTe substrates has been evaluated using
transmission electron microscopy (TEM). The devices consisted of thick (∼21-μm) n-type layers and thin (∼1.6-μm) p-type layers,
with final CdTe (∼0.5 μm) passivation layers. Initial observations revealed small defects, both within the n-type layer (doped
with 8×1014/cm3 of In) and also within the p-type layer but at a much reduced level. These defects were not visible, however, in cross-sectional
samples prepared by ion milling with the sample held at liquid nitrogen temperature. Only isolated growth defects were observed
in samples having low indium doping levels (2×1014/cm3). The CdTe passivation layers were generally columnar and polycrystalline, and interfaces with the p-type HgCdTe layers were
uneven. No obvious structural changes were apparent in the region of the CdTe/HgCdTe interfaces as a result of annealing at
250°C. 相似文献
10.