多层梯度层InGaAs（P）InPSAGM雪崩光电二极管

本文报道采用液相外延（ＬＰＥ）生长和传统光刻制管工艺研制出引入多层（三层或三层以上）中间能带隙过渡的吸收区、倍增区分离的ＩｎＧａＡｓ（Ｐ）／ＩｎＰ雪崩光电二极管（简称ＩｎＧａＡｓ（Ｐ）／ＩｎＰＳＡＧＭＡＰＤ），其技术指标为：击穿电压ＶＢ＝４０～９０Ｖ；０．９ＶＢ时的暗电流Ｉｄ最小可小于１０ｎＡ；１．３μｍ时光响应度Ｒｅ＝０．６～０．８Ａ／Ｗ，倍增因子Ｍ≥２０（Ｍｍａｘ＞４０），过剩噪声因子Ｆ≌５和较宽频带响应特性。     

From Long Infrared to Very Long Infrared Wavelength Focal Plane Arrays Made with HgCdTe n + n ?/ p Ion Implantation Technology

This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd _x Hg_1−x Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility of high-performance complex focal plane arrays in the VLWIR range at medium term.     

碲镉汞外延晶膜的不稳定性

利用变温和变磁场霍尔测试对在空气室温环境长期存放的碲镉汞液相处延晶膜作了定期的检测，结果表明，晶膜的电学性质随时间有明显的改变，本文采用非均匀晶膜的层状模型对晶膜的不稳定性作了详细的分析。     

InGaAsP／InP PFBH激光器

采用Ｎ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ激光器和ＤＦＢ激光器在国内已报导过多次，本文介绍用Ｐ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ平面埋层异质结构激光器和ＤＦＢ－ＰＦＢＨ激光器，同时利用晶体生长和晶向的依赖关系，改进埋区的结构，使器件最高激射温度大于１００℃。     

LPE生长外延片超薄有源层结构的SEM研究

通过对液相外延（LPE）生长的外延片不同处理方法的研究，摸索出一条利用扫描电子显微镜（SEM）来观测有源区厚度的有效方法──蒸金法，最优可观察有源区厚度20nm，对设计厚度为18nm结构来说[1]，这是一种便利而有效的观察手段。     

A new synthetic metamodel methodology for liquid‐propellant engine's cooling system optimization

The present paper strives for optimization of the cooling system of a liquid‐propellant engine (LPE). To this end, the new synthetic metamodel methodology utilizing the design of experiment method and the response surface method was developed and implemented as two effective means of designing, analyzing, and optimizing. The input variables, constraints, objective functions, and their surfaces were identified. Hence, the design and development strategy of combustion chamber and nozzle was clarified, and 64 different experiments were carried out on the RD‐161 propulsion system, of which 47 experiments were approved and compatible with the problem constraints. This engine used all three modes of cooling: the radiation cooling, the regenerative cooling, and the film cooling. The response surface curves were drawn and the related objective function equations were obtained. The analysis of variance results indicate that the developed synthetic model is capable to predict the responses adequately within the limits of input parameters. The three‐dimensional response surface curves and contour plots have been developed to find out the combined effects of input parameters on responses. In addition, the precision of the models was assessed and the output was interpreted and analyzed, which showed high accuracy. Therefore, the desirability function analysis has been applied to LPE's cooling system for multiobjective optimization to maximize the total heat transfer and minimize the cooling system pressure loss simultaneously. Finally, confirmatory tests have been conducted with the optimum parametric conditions to validate the optimization techniques. In conclusion, this methodology optimizes the LPE's cooling system, a 2% increase in the total heat transfer, and a 38% decrease in the pressure loss of the cooling system. These values are considerably large for the LPE design.     

管道3LPE防腐蚀层补口失效原因及建议

根据调研,管道3LPE补口失效主要以密封失效和底漆失效为主,分析了其失效的主要原因;针对失效的原因,提出了五种热收缩带补口技术的改进措施。同时,面对热收缩带不可避免的失效问题,通过调研多个现场开挖验证实例,分析并对比了多种新型3LPE补口技术的应用及检测结果。有助于全面认识热收缩带补口技术,并为后续管道工程中3LPE防腐蚀层补口方法的选择和改进提供多种思路。     

用于DLTS测试的MOS结构

本文采用阳极氧化工艺制备AlGaAs/GaAs自身氧化膜,进而制成MOS结构。对氧化膜的组分和稳定性,以及MOS结构的C—V特性进行了实际测量和理论分析。实验结果表明:经氮气退火后的氧化膜的电学性质稳定。本文得出了适合于深能级瞬态谱测试的MOS结构,及采用MOS结构进行DLTS测试的测试条件。     

The growth of buffered GaAs mesfet structures by LPE

Layers of LPE GaAs have been grown with background carrier levels in the low 10¹⁴ cm⁻³ range by systematic bakeouts of the Ga melts together with between-run loading in a dry N₂ environment. High resistivity layers in the range 10₃-10⁴Ω cm have been grown by making use of the compensation of free carriers by the out diffusion of Cr from the substrate. Intentional Cr-doping from the melt resulted in layers with poor surface morphologies. Buffered MESFET structures have been grown which show near ideal carrier concentration profiles and which do not exhibit interfacial space charge effects.     

Selective LPE-growth of ln0.53Ga0.47As on semi-insulating InP

Selective liquid phase epitaxy (SLPE) of high purity(n = 2 × 10¹⁵ cm^-3) In_0.53Ga_0.47As on SiO₂-masked (100)-InP:Fe substrates has been performed and investigated using Normarski interference contrast microscopy and SEM. The infill growth was done at low temperatures (˜ 585° C) directly into chemically (HC1:CH₃COOH:H₂O₂) etched cavities without melt-etching. Square and circular recesses of 2–3 μm depth and varying size (100-500 μm) have been used in contrast to common reported regrowth experiments in long channels. Enormously enhanced growth rates have been found within the small structures. Orientation dependent growth effects are described. The realization of selectively grown areas with flat surface morphology has been achieved which is important for optoelectronic integration. Most information contained in this paper was presented at the 27th Electronic Materials Conference, Boulder, Co., June 20, 1985.