Good dielectric performance and broadband dielectric polarization in Ag,Nb co-doped TiO2

Due to the demand of miniaturization and integration for ceramic capacitors in electronic components market, TiO₂-based ceramics with colossal permittivity has become a research hotspot in recent years. In this work, we report that Ag⁺/Nb⁵⁺ co-doped (Ag_1/4Nb_3/4)_xTi_1−xO₂ (ANTOx) ceramics with colossal permittivity over a wide frequency and temperature range were successfully prepared by a traditional solid–state method. Notably, compositions of ANTO0.005 and ANTO0.01 respectively exhibit both low dielectric loss (0.040 and 0.050 at 1 kHz), high dielectric permittivity (9.2 × 10³ and 1.6 × 10⁴ at 1 kHz), and good thermal stability, which satisfy the requirements for the temperature range of application of X9R and X8R ceramic capacitors, respectively. The origin of the dielectric behavior was attributed to five dielectric relaxation phenomena, i.e., localized carriers' hopping, electron–pinned defect–dipoles, interfacial polarization, and oxygen vacancies ionization and diffusion, as suggested by dielectric temperature spectra and valence state analysis via XPS; wherein, electron-pinned defect–dipoles and internal barrier layer capacitance are believed to be the main causes for the giant dielectric permittivity in ANTOx ceramics.     

The phosphorescence emission in undoped lead-halide Cs4PbBr6 single crystals at low temperature

Recently, all-inorganic cesium lead-halide perovskites have shown their promise for light emission applications, due to the excellent optical performance. Herein, we report that the initially nonphosphorescent undoped lead-halide Cs₄PbBr₆ single crystals (SCs) exhibit an ultralong phosphorescence emission under X-ray excitation at low temperatures. It is shown that the dramatic change has been taken place in radioluminescence spectra and the broad-band emission gradually appeared with the decrease of temperature. Below 210 K, the radioluminescence spectra can be deconvoluted into one narrow peak located at 530 nm and two broad peaks centered at 595 nm and 672 nm respectively. Subsequently, the time-dependent radioluminescence spectra in undoped lead-halide Cs₄PbBr₆ SCs were investigated. The ultralong phosphorescence emission can persist over 120 min at 70 K. We consider that ultralong phosphorescence originates from defect-related emission. To the best of our knowledge, our finding is the first time that undoped Cs₄PbBr₆ SCs exhibit the phosphorescence emission, which will offer a paradigm to motivate revolutionary applications on perovskite.     

The influence of FeNi nanoparticles on the microstructures and soft magnetic properties of FeSi soft magnetic composites

In this work, a new type of FeSi/FeNi soft magnetic powder core (SMPC) was successfully fabricated by coating FeNi nanoparticles on the surface of FeSi micrometer powder. The effects of different contents of FeNi nanoparticles on the micromorphology, internal structures, and soft magnetic properties of SMPCs were studied. The results show that FeNi nanoparticles adhere to the surface of FeSi powder, which can effectively fill the air gap between FeSi powder and is beneficial to the compaction of the powder cores during the pressing process. Thus, the density of the SMPCs is increased. Compared to FeSi SMPCs, the comprehensive soft magnetic properties of FeSi/FeNi SMPCs have been greatly improved. When adding 15 wt% FeNi nanoparticles, the SMPCs exhibit excellent magnetic properties with high effective permeability (increased by 43.8 %) and low core loss (decreased by 22.1 %). The high performance FeSi/FeNi SMPCs prepared in this work are expected to be widely used in power choke coils, uninterruptible power supplies, and boosts and inverter inductors.     

Identifying catalyst layer compositions of proton exchange membrane fuel cells through machine-learning-based approach

Membrane electrode assembly (MEA) is considered a key component of a proton exchange membrane fuel cell (PEMFC). However, developing a new MEA to meet desired properties, such as operation under low-humidity conditions without a humidifier, is a time- and cost-consuming process. This study employs a machine-learning-based approach using K-nearest neighbor (KNN) and neural networks (NN) in the MEA development process by identifying a suitable catalyst layer (CL) recipe in MEA. Minimum redundancy maximum relevance and principal component analysis were implemented to specify the most important predictor and reduce the data dimension. The number of predictors was found to play an essential role in the accuracy of the KNN and NN models although the predictors have self-correlations. The KNN model with a K of 7 was found to minimize the model loss with a loss of 11.9%. The NN model constructed by three corresponding hidden layers with nine, eight, and nine nodes can achieve the lowest error of 0.1293 for the Pt catalyst and 0.031 for PVA as a good additive blending in the CL of the MEA. However, even if the error is low, the prediction of PVA seems to be inaccurate, regardless of the model structure. Therefore, the KNN model is more appropriate for CL recipe prediction.     

Nitrogen-doped hierarchically porous carbon obtained via single step method for high performance supercapacitors

In the present work, nitrogen doped hierarchically activated porous carbon (APC) samples have been synthesized via single step scalable method using ethylene di-amine tetra acetic acid (EDTA) as precursor and KOH as activating agent. Activated porous carbons with different pore sizes have been developed by varying the activation temperature. SEM, TEM and SAXS analysis suggest that with variation of activation temperature, a hierarchical porous structure with interconnected meso-pore and micro pores has been achieved. The sufficiently high surface area of the synthesized materials provides active sites to enhance the diffusion of ions between the electrolyte and the carbon electrodes. The electrode prepared at 800 °C activated sample exhibited highest specific capacitance of 274 Fg^-1 in two electrode setup, at a current density of 0.1 Ag^-1 in 1 M aqueous H₂SO₄. Along with this, it showed maximum energy density of 9.5 Whkg^?1 at a power density of 64.5 Wkg^-1. The remarkable electrochemical performance reveals that the synthesized nitrogen doped activated carbon electrodes derived from EDTA can be tuned to have optimum pore structure and pore size distribution for better electrochemical performance, so it can be considered as a potential electrode material for applications in electrochemical energy storage.     

一种北斗联合低轨星座的导航增强方法研究

单纯依靠北斗导航系统提供定位导航授时服务,存在卫星信号落地功率低、易受遮蔽和阻断的不足。针对此问题,研究了一种北斗联合低轨星座实现导航增强的系统架构;提出了一种新的适应严重遮蔽或干扰条件下,基于到达时间(TOA)和到达频率(FOA)联合观测的定位解算算法;对高中低轨混合星座条件下的覆盖特性和精度衰减因子进行了仿真分析。分析结果表明,用户可见星数平均增加了64.2%,位置精度衰减因子(PDOP)平均改善了28.7%。研究结果可为下一代北斗的论证设计与研制建设提供参考借鉴。     

Slow strain rate technique for studying hydrogen induced cracking in 34CrMo4 high strength steel

Alloy hardened steels offer excellent combination of mechanical properties, hardenability and corrosion resistance. 34CrMo4 is a medium carbon, low alloy steel widely used due to a good combination of high-strength, toughness and wear resistance. However, this steel experiences hydrogen embrittlement (HE), a complex phenomenon depending on the composition and microstructure. This work estimates de loss of the mechanical properties caused by hydrogen in electrochemically H-charged specimens in absence of mechanical stress but also, at low strain rate and constant load. H-charging for 2 and 6 h induce YS losses of about 40% and 71% and UTS losses of 39% and 59%, respectively. The synergistic effect of the stress and the H-charging process leads to a higher loss, 91%, and a faster brittle fracture even though hydrogen content is similar to those firstly H-charged and then tested in air.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy

The eutectic 80Au/20Sn solder alloy is widely used in high power electronics and optoelectronics packaging. In this study, low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy is reported. The 80Au/20Sn solder shows a quasi-static fracture characteristic at high strain rates, and then gradually transforms from a transgranular fracture (dominated by fatigue damage) to intergranular fracture (dominated by creep damage) at low strain rates with increasing temperature. Coffin-Manson and Morrow models are proposed to evaluate the low cycle fatigue behavior of the 80Au/20Sn solder. Besides, the 80Au/20Sn solder has enhanced fatigue resistance compared to the 63Sn/37Pb solder.     

Voltage reference architectures for low-supply-voltage low-power applications

This paper presents a voltage reference generator architecture and two different realizations of it that have been fabricated within a standard 0.18 μm CMOS technology. The architecture takes the advantage of utilizing a sampled-data amplifier (SDA) to optimize the power consumption. The circuits achieve output voltages on the order of 190 mV with temperature coefficients of 43 ppm/°C and 52.5 ppm/°C over the temperature range of 0 to 120°C without any trimming with a 0.8 V single supply. The power consumptions of the circuits are less then 500 nW while occupying an area of 0.2 mm² and 0.08 mm², respectively.