工业级微波高温烧结窑炉的设计与应用研究

通过将微波高温烧结技术与传统永磁铁氧体材料烧结工艺相结合,设计并研制出大型微波高温烧结辊道窑炉,工业生产实践结果表明：①所研制窑炉在运行过程中微波发射系统长时间工作稳定性好、功率输出大范围内连续可调、烧结温度均匀、操作简易、控制精度与自动化程度高,整体运行效果平稳可靠。②与传统电阻加热烧结工艺相比,微波烧结永磁铁氧体产品的磁性能指标优异,烧结合格率在99％以上,可缩短烧结保温周期40％,产品的尺寸及性能一致性高、磨削加工合格率可提高5％,充分体现了微波烧结技术的显著优势。尤其是在烧结大尺寸规格产品方面,微波烧结工艺更加体现了其“加热均匀、快速高效、一致性好”等显著特点,有效避免了烧结过程中易于出现的产品开裂、变形等严重质量问题,烧结合格率可提高一倍以上。     

Low-temperature microwave synthesis and luminescence properties of far-red emission ZnGa2O4:Cr3+ phosphor for plant cultivation

In this work, microwave (MW) sintering method is employed to synthesize far-red (FR) emission ZnGa₂O₄:Cr³⁺ phosphor at a lower sintering temperature (900 °C), comparing with the conventional high temperature solid-state sintering (SS) method. Micrometer-size phosphor particles with smooth morphology are obtained due to the MW-induced small temperature gradient between the constituent particles upon the local dielectric volumetric heating. The MW sintering ZnGa₂O₄:Cr³⁺ phosphor exhibited excitable properties at the wavelengths of 260 nm, 410 nm and 550 nm, and the intensity of photoluminescence excitation (PLE) at 260 nm showed a dramatic enhancement, which is 2–3 times higher than that of SS sintering sample due to MW “non-thermal effect” in reducing the defect amount in the ZnGa₂O₄ host latices. These results together with decay time, thermal quenching and color coordinate evaluations showed that synthesis of FR emission ZnGa₂O₄:Cr³⁺ by MW-sintering method has advantages of high efficiency, energy saving and least environmental threats.     

Modification on PTCR behavior of (Sr0.2Ba0.8)TiO3 materials by post-heat treatment after microwave sintering

Abstract

Effect of post-sintering treatment on PTCR behavior of (Sr_0.2Ba_0.8)TiO₃ materials prepared by microwave-sintering (ms) process was compared to that prepared by rapid thermal sintering (RTS) process. The microwave-sintering process needed only 1130°C-40 min to effectively densify (Sr_0.2Ba_0.8)TiO₃ materials. The grain size was around 6 μm and PTCR characteristics was around ρ_max/ρ_min≈ 10^1.75, with T_c = 50°C. Lowering the cooling rate after sintering substantially increases the resistivity jump (ρ_max/ρ_min) from 10² to 10^3.4, without altering the microstructure. The annealing at 1250°C for 2 h markedly increased the resistivity jump to (ρ_max/ρ_min)≈10⁶. On the other hand, the rapid thermal sintering (RTS) process required 1320°C-30 min to fully develop the good microstructure (～15 μm) and PTCR property (ρ_max/ρ_min ～ 10^3.0). Post-sintering process, including cooling rate control and annealing, did not improve the electrical properties of these samples, that is ascribed to the slow-cooling rate characteristics of RTS-process for a temperature lower than 800°C.