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A. Nakano T. Shimazaki M. Sekiya H. Shiozawa K. Ohtsuka A. Aoyagi T. Iwakiri Z. Mikami M. Sato Y. Sugino K. Kinoshita T. Matsuoka T. Imamura Y. Takayama K. Yamamoto 《International Journal of Hydrogen Energy》2021,46(29):15649-15659
Monitoring the temperature in liquid hydrogen (LH2) storage tanks on ships is important for the safety of maritime navigation. In addition, accurate temperature measurement is also required for commercial transactions. Temperature and pressure define the density of liquid hydrogen, which is directly linked to trading interests. In this study, we developed and tested a liquid hydrogen temperature monitoring system that uses platinum resistance sensors with a nominal electrical resistance of approximately 1000 Ω at room temperature, PT-1000, for marine applications. The temperature measurements were carried out using a newly developed temperature monitoring system under different pressure conditions. The measured values are compared with a calibrated reference PT-1000 resistance thermometer. We confirm a measurement accuracy of ±50 mK in a pressure range of 0.1 MPa–0.5 MPa. 相似文献
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In the present work we have studied the effect of Na on the properties of graded Cu(In1−xGax)Se2 (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×1018–2.5×1019 cm−3) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively. 相似文献
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In this research, we propose a novel framework referred to as collective game behavior decomposition where complex collective behavior is assumed to be generated by aggregation of several groups of agents following different strategies and complexity emerges from collaboration and competition of individuals. The strategy of an agent is modeled by certain simple game theory models with limited information. Genetic algorithms are used to obtain the optimal collective behavior decomposition based on history data. The trained model can be used for collective behavior prediction. For modeling individual behavior, two simple games, the minority game and mixed game are investigated in experiments on the real-world stock prices and foreign-exchange rate. Experimental results are presented to show the effectiveness of the new proposed model. 相似文献
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电信宽带LAN接入网建设中的有关问题探讨 总被引:1,自引:0,他引:1
文章介绍了采用以太网技术的宽带接入网,对目前以及网宽带接入网建设中存在的问题如安全、维护、投资和计费等进行了研究,提出了解决上述问题的建议。 相似文献
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应用二维器件仿真程序 PISCES- ,对槽栅结构和平面结构器件的特性进行了模拟比较 ,讨论了槽栅结构 MOSFET的沟道电场特征及其对热载流子效应的影响。槽栅结构对抑制短沟道效应和抗热载流子效应是十分有利的 ,而此种结构对热载流子的敏感 ,使器件的亚阈值特性、输出特性变化较大 相似文献
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深亚微米MOSFET衬底电流的模拟与分析 总被引:1,自引:0,他引:1
利用器件模拟手段对深亚微米MOSFET的衬底电流进行了研究和分析,给出了有效的道长度,栅氧厚度,源漏结深,衬底掺杂浓度以及电源电压对深亚微米MOSFET衬底电流的影响,发现电源电压对深亚微米MOSFET的衬底电流有着强烈的影响,热载流子效应随电源电压的降低而迅速减小,当电源电压降低到一定程度时,热载流子效应不再成为影响深亚微米MOS电路可靠性的主要问题。 相似文献
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I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献