电子辐照深亚微米MOS晶体管的总剂量效应

为了研究电子辐照导致CCD参数退化的损伤机理,以及CCD内不同沟道宽长比的NMOSFET的辐射效应,将与CCD同时流片的两种不同沟道宽长比的深亚微米NMOSFET进行电子辐照实验。分析了电子辐照导致NMOSFET阈值电压和饱和电流退化的情况,以及器件的辐射损伤敏感性。实验结果表明,电子辐照导致两种NMOSFET器件的参数退化情况以及辐射损伤敏感性类似。导致器件参数退化的主要原因是界面陷阱电荷,同时氧化物陷阱电荷表现出了一定的竞争关系。实验结果为研究CCD电子辐照导致的辐射效应提供了基础数据支持。     

NMOSFET characteristics on a double hetero-epitaxial Si/γ-Al2O3/Si structure fabricated by a new MBE growth method

A new MBE growth method for the fabrication of a high-quality double hetero-epitaxial Si/γ-Al₂O₃/Si structure was recently developed. In the present work, characteristics of NMOSFETs fabricated on the Si/γ-Al₂O₃/Si structure were investigated, and compared with those on a Si/MgAl₂O₄/Si structure. A γ-Al₂O₃ layer was created from a MgAl₂O₄ layer by reaction with Si beams as follows: MgAl₂O₄ + Si → γ-Al₂O₃ + SiO ↑ + Mg ↑. The MBE growth of Si on the effectively restructured γ-Al₂O₃ layer was then performed at a substrate temperature of 700° C, 150° C lower than for the MBE growth of Si on a MgAl₂O₄/Si substrate. The electron field effect mobility and leakage current between source and drain for the NMOSFETs fabricated on Si/γ-Al₂O₃/Si structures were 660 cm²/V · s and 2.8 pA/μm respectively, and exhibited a higher level of performance than those on a Si/MgAl₂O₄/Si structure. In the Si/MgAl₂O₄/Si, SIMS measurements confirmed that autodoped Al and Mg atoms near the interface between the Si epi-layer and MgAl₂O₄/Si substrate diffused anomalously and accumulated at the surface during device fabrication processes. These autodoped Al and Mg atoms acted as ionized impurities during test operation. Suppression of autodoping from insulator layers during the MBE growth of Si was thus deemed essential to the improvement of NMOSFET characteristics. In the Si/γ-Al₂O₃/Si structure, autodoped atoms were scarcely detectable. It was therefore concluded that the Si/γ-Al₂O₃/Si structure under study was very promising for SOI device applications.     

NMOS低温热载流子晶体管的解析研究

利用低温(77-295K)短沟NMOSFET准二维解析模型,研究了77-295K温区NMOSFET衬底电流相关的物理机制。发现沟道电子平均自由程不随温度而改变,其值约为7.6nm;低温下虽然沟道电子在漏端获得较高的能量,但由于碰撞电离减弱,使NMOSFET的衬底电流不随温度降低而显著增长。实验结果证明,提出的衬底电流机制和模型适用于77-295K宽温区范围。     

基于高温抗辐照SOI CMOS工艺的器件特性研究

绝缘体上硅（SOI）技术因其独特的优势而广泛应用于辐射和高温环境中,研究不同顶层硅膜厚度（tSi）的器件特性,对进一步提升高温抗辐照SOI CMOS器件的性能至关重要。本工作首先通过工艺级仿真构建了N沟道金属氧化物半导体场效应晶体管（NMOSFET）的模型,并对其进行了分析,基于仿真结果,采用015 μm抗辐照SOI CMOS工艺制备出具有不同硅膜厚度的实际器件,该工艺针对高温应用引入了设计与材料的优化。结果表明,薄硅膜和厚硅膜NMOSFET在150 krad(Si) 总剂量辐射下表现出相近的抗辐照加固性能,而前者在225 ℃高温下具有较小的漏电流,因此具有较薄硅膜的NMOSFET更适用于高温电子器件的制造。     

Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology

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总剂量辐照对65 nm NMOSFET热载流子敏感参数的影响

为了研究总剂量辐射对纳米MOS晶体管热载流子效应的影响,对65 nm 体硅工艺的NMOS器件进行了总剂量辐射和热载流子试验,对比了辐射前后不同宽长比器件的跨导、栅极泄漏电流、线性饱和电流等电参数。结果表明,MOS器件的沟道宽度越窄,热载流子效应受辐射的影响越显著,总剂量辐射后热载流子效应对器件的损伤增强。分析认为,辐射在STI中引入的陷阱电荷是导致以上现象的主要原因。该研究结果为辐射环境下器件的可靠性评估提供了依据。     

总剂量加固对SOINMOS器件抗辐射特性的影响

采用埋层改性工艺对部分耗尽SOI NMOS器件进行总剂量加固,通过测试器件在辐射前后的电学性能研究加固对SOI NMOS器件抗辐射特性的影响。加固在埋氧层中引入电子陷阱,辐射前在正负背栅压扫描时,电子陷阱可以释放和俘获电子,导致背栅阈值电压产生漂移,漂移大小与引入电子陷阱的量有关。通过加固可以有效提高器件的抗总剂量辐射特性,电子陷阱的量对器件的抗辐射性能具有显著影响。     

Experimental investigation of N-MOS inversion layers in the electric quantum limit

In this paper we report on the experimental determination of inversion electron charge density, silicon surface potential, and effective electron mobility vs oxide electric field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relationships in the inversion layer. We find that such oxides have the same values of destructive breakdown electric field, dielectric constant, and trap density at the silicon-oxide interface as “thick” oxides.     

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

The MOSFET gate length reduction down to 32 nm requires the introduction of a metal gate and a high-K dielectric as gate stack, both stable at high temperature. Here we use a nanometric layer of Lanthanum to shift the device threshold voltage from 500 mV. Because this layer plays a key role in the device performance and strongly depends on its deposition process, we have compared two LaO_x deposition methods in terms of physical properties and influence on electrical NMOS device parameters. Chemical characterizations have shown a different oxidization state according to Lanthanum thickness deposited. It has been related to threshold voltage shift and gate leakage current variations on NMOS transistors. Furthermore mobility extractions have shown that Lanthanum is a cause of mobility degradation.     

6H-SiC埋沟NMOSFET耗尽模式的电流特性分析

在考虑杂质不完全离化的作用下,建立了6H—SiC埋沟NMOSFET耗尽模式下的电流解析模型。并通过模型,仿真分析了器件电流随温度的变化情况。在温度达到600k以上时,杂质的不完全离化作用对器件的影响不明显。常温下电流特性模型的仿真结果与实验结果的一致性,说明了本模型的准确性。