一种具有衬底n型电荷区的高压LIGBT

本文基于4μm漂移区厚度提出一种具有衬底浮空n型电荷区的新型LIGBT（NR-LIGBT）。由于n型电荷区的电场调制作用,器件的纵向击穿特性得到加强,击穿电压得到明显的提高。由于高的单位微米平均电场,因此新器件具有面积成本低、电流能力强和关断时间短的特点。模拟结果表明：在相同的100μm漂移区长度下,新结构的击穿电压比常规结构（C-LIGBT）提高了58％。并且,在相同的阻断能力下,新结构的关断时间短于常规器件。     

A novel high voltage LIGBT with an n-region in p-substrate

A novel 4μm thickness drift region lateral insulated gate bipolar transistor with a floating n-region(NRLIGBT) in p-substrate is proposed.Due to the field modulation from the n-region,the vertical blocking capability is enhanced and the breakdown voltage is improved significantly.Low area cost,high current capability and short turn-off time are achieved because of the high average electric field per micron.Simulation results show that the blocking capability of the new LIGBT increases by about 58%when compared with the conventional LIGBT (C-LIGBT) for the same 100μm drift region length.Furthermore,the turn-off time is shorter than that of the conventional LIGBT for nearly same blocking capability.