一种面向无源RFID电子标签的电流灵敏放大器设计

提出了一种适用于无源射频识别RFID电子标签中多次可编程MTP非易失性存储器NVM的新型电流灵敏放大器结构。该电路在不增加面积的情况下具有低功耗、高速度、高可靠性和高灵敏度的优越性能。基于GSMC 0.13μm CMOS工艺下的仿真结果表明,新型灵敏放大器在-40℃~80℃的环境下具有很高的读取速度,且能够工作在低电压（0.8 V）下。在1.2 V工作电压、27℃室温下电路的读出延时是10.5 ns,平均功耗为6.1 μW@25MHz,分辨率可达到33 nA。     

Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of capacitance-voltage characteristics demonstrated that the ultra-thin oxynitride layers of 2 nm thickness formed by only nitrous oxide plasma have good properties as tunneling layer for non-volatile memory device.     

非挥发性记忆体Read Disturb测试方法的研究

DDF是一种高容量的NAND Flash。以DDF产品为例,研究和讨论了它的Read Disturb测试方法。受测试时间的限制,只能选择局部的存储区间进行DDF的Read Disturb测试。这样局部区间的测试结果是否能够代表整个芯片的性能,设计了一套实验,对这个课题进行了研究和讨论。依据非挥发性记忆体产品的特性,主要以阈值电压的分布为参考来评价DDF芯片性能的一致性和性能恶化趋势的一致度。最后的实验结果证明了这种测试方法的正确性和合理性。这种分析方法也可以用于其他非挥发性记忆体产品的其他可靠性测试项目的评估。     

A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

New investigations are presented here on a high-density and DRAM-like high-speed non-volatile memory (NVM) application of unified RAM (URAM). For a high-density application of URAM, multiple data storage is demonstrated with a multi-dual cell (MDC). Because each NVM state can be split by programming with a one-transistor (1T) DRAM without a capacitor, the total number of memory states can be doubled. Furthermore, a high-speed DRAM-level NVM scheme is proposed for the joint operation of 1T DRAM buffer programming and NVM post-background programming. The MDC and the proposed scheme are unique URAM properties that can extend the application range of memory devices.     

面向NVM存储系统的快速文件访问系统

NVM存储设备系统具备提供高吞吐的潜质,包括接近内存的读写速度、字节寻址特性和支持多路转发等优势。但现有的系统软件栈并没有针对NVM去设计,使得系统软件栈存在许多影响系统访问性能的因素。通过分析发现文件系统的锁机制具有较大的开销,这使得数据的并发访问在多核心环境下成为一个难题。为了缓解这些问题,设计了无锁的文件读写机制以及基于字节的读写接口。通过取消基于文件的锁机制改变了粗粒度的访问控制,利用自主管理请求提高了进程的并发度;在设计能够利用字节寻址的新的文件访问接口时,不仅考虑了NVM存储设备的读写非对称,还考虑了其读写操作的不同特性。这些设计减少了软件栈的开销,有利于发挥NVM特性来提供一个高并发、高吞吐和耐久的存储系统。最后利用开源NVM模拟器PMEM实现了FPMRW原型系统,使用Filebench通用测试工具对FPMRW进行测试与分析,结果显示,FPMRW相对EXT+PMEM和XFS+PMEM能提高3%~40%的系统吞吐率。     

AN HSPICE MACROMODEL FOR RESISTIVE RANDOM ACCESS MEMORY CELL BASED ON CuxO SYSTEM

ABSTRACT

A general HSPICE macromodel for the Cu_xO based resistive random access memory(ReRAM) cell is presented in this paper. It can simulate both the dc and transient behavior of ReRAM cells. The simulation results were compared with the experimental results and exhibited desirable accordance.     

Thickness dependence of high-k materials on the characteristics of MAHONOS structured charge trap flash memory

The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF) memory of MAHONOS (Metal/Al₂O₃/HfO₂/SiO₂/Si₃N₄/SiO₂/Si) structure were investigated. The stack of SiO₂/Si₃N₄/SiO₂ films were used as engineered tunnel barrier, HfO₂ and Al₂O₃ films were used as charge trap layer and blocking oxide layer, respectively. For comparison, the electrical characteristics of MONOS (Metal/SiO₂/Si₃N₄/SiO₂/Si), MONONOS (Metal/SiO₂/Si₃N₄/SiO₂/Si₃N₄/SiO₂/Si), and MAHOS (Metal/Al₂O₃/HfO₂/SiO₂/Si) were also evaluated. The energy band diagram was designed by using the quantum-mechanical tunnel model (QM) and then the CTF memory devices were fabricated. As a result, the optimized thickness combination of MAHONOS structure was confirmed. The tunnel barrier engineered MAHONOS CTF memory showed a considerable enhancement of program/erase (P/E) speeds, retention time and endurance characteristics.     

面向非易失内存的数据一致性研究综述

随着DRAM技术面临密度扩展瓶颈以及高泄漏功耗问题,新型非易失内存(non-volatile memory, NVM)因其非易失、高密度、字节寻址和低静态功耗等特性,已经得到学术界和工业界的广泛关注.新型非易失内存如相变内存(phase change memory, PCM)很可能替代DRAM或与DRAM混合作为系统主内存.然而,由于NVM的非易失特性,存储在NVM的数据在面临系统故障时可能由于部分更新或内存控制器写重排序而产生不一致性的问题.为了保证NVM中数据的一致性,确保对NVM写操作的顺序化和持久化是基本要求.NVM有着内在缺陷如有限的写耐久性以及较高的写延迟,在保证NVM数据一致性的前提下,减少NVM写次数有助于延长NVM的寿命并提高NVM系统的性能.重点讨论了基于NVM构建的持久索引、文件系统以及持久性事务等数据一致性研究,以便为实现低开销的数据一致性提供更好的解决方案或思路.最后给出了基于NVM的数据一致性研究展望.     

基于重用信息的非易失性缓存动态旁路策略

非易失性存储器具有能耗低、可扩展性强和存储密度大等优势,可替代传统静态随机存取存储器作为片上缓存,但其写操作的能耗及延迟较高,在大规模应用前需优化写性能.提出一种基于缓存块重用信息的动态旁路策略,用于优化非易失性存储器的缓存性能.分析测试程序访问最后一级缓存(LLC)时的重用特征,根据缓存块的重用信息动态预测相应的写操...     

NVMRA: utilizing NVM to improve the random write operations for NAND‐flash‐based mobile devices

NAND flash memory has become the major storage media in mobile devices, such as smartphones. However, the random write operations of NAND flash memory heavily affect the I/O performance, thus seriously degrading the application performance in mobile devices. The main reason for slow random write operations is the out‐of‐place update feature of NAND flash memory. Newly emerged non‐volatile memory, such as phase‐change memory, spin transfer torque, supports in‐place updates and presents much better I/O performance than that of flash memory. All these good features make non‐volatile memory (NVM) as a promising solution to improve the random write performance for NAND flash memory. In this paper, we propose a non‐volatile memory for random access (NVMRA) scheme to utilize NVM to improve the I/O performance in mobile devices. NVMRA exploits the I/O behaviors of applications to improve the random write performance for each application. Based on different I/O behaviors, such as random write‐dominant I/O behavior, NVMRA adopts different storing decisions. The scheme is evaluated on a real Android 4.2 platform. The experimental results show that the proposed scheme can effectively improve the I/O performance and reduce the I/O energy consumption for mobile devices. Copyright © 2015 John Wiley & Sons, Ltd.