Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

我国IC产业发展状况分析

本文分析了集成电路及其相关技术的现状和发展趋势。分析了国内集成电路产业状况和面临的课题。     

红外焦平面器件脉冲驱动电路的小型化设计

代表着红外器件发展的主流方向的红外焦平面器件，其正常工作时需要驱动脉冲信号多达十几路，为了使红外焦平面阵列处于最佳工作状态，就必须设计出相应的驱动电路。提出了一种红外焦平面器件驱动电路的设计方法。该电路具有体积小、功率低及灵活性好等特点，为驱动电路以及成像系统的小型化提供了良好的技术基础。     

Pulsed laser deposition of indium antimonide

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

可编程逻辑器件安全性漏洞检测平台设计与实现

芯片作为信息存储、传输、应用处理的基础设备,其安全性是信息安全的一个重要组成部分。可编程逻辑器件安全性漏洞检测平台正是为了检测出逻辑芯片内可能存在的攻击后门和设计缺陷而研制的,从而确保电子设备中信息安全可靠。文章研究可编程逻辑器件漏洞检测平台的设计与实现,简要介绍了检测平台的总体结构和运行机制,给出了检测平台的总体设计思想、实现方案及系统组成,并深入研究了漏洞检测平台设计与实现所涉及的相关技术。     

脉冲激光沉积VN/Ag复合薄膜的组织及摩擦学性能研究

利用脉冲激光沉积技术制备了不同Ag含量的VN/Ag复合薄膜,利用扫描电子显微镜、X射线衍射仪、纳米力学测试系统等设备表征薄膜的组织结构、成分、表面形貌及力学性能,利用UMT-3摩擦试验机考察薄膜在室温至900℃下的摩擦学性能。结果表明,随着Ag含量的增多,薄膜的组织形貌变差,硬度及弹性模量降低。当Ag含量为16%(原子分数)时薄膜在试验温度范围内的摩擦学性能最佳。由于Ag在低温的润滑特性及高温摩擦化学反应生成了新的润滑相,如V2O5、V6O11、V6O13、Ag3VO4、AgVO3等,使得摩擦系数随温度的升高而逐渐降低,在900℃下取得最低值0.08,实现了宽温域内的连续润滑。     

逻辑未知PLD的安全性漏洞检测方法

针对逻辑未知PLD的孤立状态检测,对黑箱检测法进行研究。通过分析PLD的I/O结构,阐述检测过程中引脚属性判别的原理,对比分析3类判别算法的性能。针对状态驱动问题,阐明现有驱动算法的实现思想,分析现有驱动算法的空间复杂度,并且针对状态搜索和转移路径长度,定性地分析时间复杂度,提出下一步研究的重点。     

可编程逻辑器件的VHDL语言优化设计方法

叙述了可编程逻辑器件的VHDL语言典型设计流程,详细讨论了几种可更好地利用可编程逻辑器件实现特定逻辑功能以及提高器件利用率的VHDL优化设计方法。     

可编程逻辑器件在积分式A/D转换器中的应用

本文通过详细介绍PLD器件在积分式A/D转换器数字控制部分的设计,说明可编程逻辑器件(PLD)主要是复杂可编程逻辑器件(CPLD)在数字逻辑系统设计中良好的移植性及稳定性。设计中使用的器件是Altera公司的Max9000系列。