SnO2 modified PNN-PZT ceramics with ultra-high piezoelectric and dielectric properties

In this work, a two-step solid-state reaction method is used to prepare the 0.55 Pb(Ni_1/3Nb_2/3)O₃-0.135PbZrO₃-0.315PbTiO₃/xSnO₂ (PNN-PZT/xSnO₂) ceramics. The influences of SnO₂ on the crystalline structure, electromechanical properties, and temperature stability of PNN-PZT ceramics were studied in detail. The results demonstrate that the Sn⁴⁺ ions are successfully introduced into the PNN-PZT crystalline lattice and substitute B-site Ni²⁺ and Zr⁴⁺. The x = 0.0025 ceramic with the coexistence of rhombohedral, tetragonal, and pseudocubic phases exhibits the optimized comprehensive properties: the quasi-static piezoelectric constant d₃₃, large-signal d₃₃*, electromechanical coupling coefficients k_p and k_t, free dielectric constant ε_r, and mechanical quality factor Q_m are 1123 pC/N, 1250 p.m./V, 0.63, 0.54, 9529, and 57, respectively. Meanwhile, the Curie temperature for this composition is 103 °C, almost maintaining the same level as the PNN-PZT matrix. After annealing at 75 °C, the retained d₃₃ of x = 0.0025 ceramic is as high as 975 pC/N, superior to the PNN-PZT matrix (retained d₃₃ ≈ 873 pC/N). Our results provide a promising piezoelectric material for board bandwidth, high sensitivity, and miniaturized medical ultrasonic transducers applications.     

High-performance Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 ceramics with the triple point composition

Ternary 0.552Pb(Ni_1/3Nb_2/3)O₃-xPbZrO₃-(0.448-x)PbTiO₃ (PNN-PZ-PT) ceramics near the triple point compositions were fabricated by an improved two-step sintering method. The triple point composition 0.552PNN-0.135PZ-0.313PT ceramic has outstanding piezoelectric performance with piezoelectric coefficient d₃₃ = 1200 pC/N. Its easy fabrication and low cost make this piezoelectric material an excellent candidate for high sensitivity sensors and ultrasonic transducers. The evolution of domain structures for ceramics with composition near the triple point provides deeper insight into the mechanism of ultrahigh piezoelectric properties of PNN-PZ-PT ceramics.     

ZnO掺杂对PNN-PZT陶瓷结构及压电性能的影响

通过传统的固相烧结法制备了Pb(Ni_(1/3)Nb_(2/3))_(0.5)(ZraTib)_(0.5)O_3+x%ZnO(PNN-PZT+x%ZnO,质量分数x=0.2,0.4,0.6,0.8)压电陶瓷,该文研究了不同ZnO含量对PNN-PZT压电陶瓷的微观形貌、相结构及压电性能的影响。通过X线(XRD)表明,过量的ZnO加入使压电陶瓷出现焦绿石相;通过扫描电镜(SEM)分析表明,当x>0.4时,ZnO的加入由于烧结温度的降低,晶界不明显。实验表明,烧结温度为1 190℃保温2h,ZnO的掺杂量x=0.4时,压电材料的综合性能最好:介电常数εr=5 596,介电损耗tanδ=2.12%,压电常数d33=534pC/N,机械耦合系数kp=0.53。     

PNN-PZT陶瓷流延浆料流变性能研究

以体积比为7:3的丁酮和无水乙醇为混合溶剂,聚乙烯醇缩丁醛(PVB)为粘结剂,邻苯二甲酸二丁酯为增塑剂,玉米油为分散剂配制了PNN-PZT陶瓷流延浆料。研究了浆料球磨时间、固相体积分数以及各有机添加剂用量对其流变性能的影响。结果表明:当w(分散剂)为0.75%,w(粘结剂)为4.17%,球磨时间为8h,固相体积分数为75%,ζ(增塑剂:粘结剂)为0.6时,浆料流变性能良好,浆料黏度在2500mPa·s左右。     

烧结温度对0.55Pb(Ni_(1/3)Nb_(2/3))O_3-0.45Pb(Zr_(0.3)Ti_(0.7))O_3压电陶瓷性能的影响

0.55Pb(Ni1/3Nb2/3)3-0.45Pb(Zr0.3Ti0.7)O3(0.55PNN-0.45PZT)组分的弛豫型压电陶瓷因具有较高的压电性能,已被作为制备含金属芯压电陶瓷纤维的材料等使用。为了进一步提高压电陶瓷纤维的电学性能,采用传统固相烧结法制备了0.55PNN-0.45PZT压电陶瓷,研究了烧结温度对材料结构、表面形貌和电学性能的影响。结果表明,在烧结温度为1200℃时,材料的各方面性能较佳:密度为8.12g/cm3,d33=850pC/N,kp=0.62,εr=7317,tanδ=0.033,Qm=41.66。     

分散剂对PNN-PZT压电陶瓷组织与性能的影响

压电陶瓷作为能够将机械能和电能相互转换的功能陶瓷在国防领域以及民用领域得到了非常广泛的应用。当今为了追求更高性能的压电陶瓷材料,世界各国的研究人员都将注意力由压电陶瓷材料的研究转向了压电陶瓷的制作工艺。本课题研究的目的主要是在传统的压电陶瓷制备工艺的基础上,通过在球磨过程中加入分散剂制备出性能参数更高更为稳定的压电陶瓷材料。本次实验研究发现,柠檬酸铵的分散效果较为显著,当采用烧结温度1200℃,柠檬酸铵分散剂浓度15%时能得到一个综合性能都比较稳定的压电陶瓷材料,其压电常数为603pC/N,机电耦合系数为0.536,介电常数为5354,介电损耗为2.197%。     

电泳沉积法制备PNN-PZT厚膜的研究

利用电泳沉积法在φ50 μm的铂金丝上制备了厚度约50 μm的0.2Pb(Ni_1/3Nb_2/3)O₃-(0.8-x)PbTiO₃-xPbZrO₃ (PNN-PZT)致密压电陶瓷厚膜. 研究了不同聚合度的分散剂聚乙二醇(PEG)对悬浮液的Zeta电势和厚膜表面形貌的影响.结果显示, 加入高聚合度的分散剂PEG10000所制得的悬浮液比加入低聚合度的分散剂PEG6000制得的悬浮液更稳定, 并且电泳沉积得到的厚膜也更加致密. 本研究解释了不同聚合度的PEG对悬浮液稳定的可能原因, 并比较了连续电泳沉积法与分步电泳沉积法对厚膜表面形貌的影响, 结果表明采用分步电泳沉积法制备的厚膜更加致密. 研究了不同的烧结温度对PNN-PZT厚膜形貌和介电性能的影响, 结果显示烧结温度为1180℃时, 厚膜的介电性能最好, 介电常数达988, 介电损耗为3.7%. 测试了1180℃烧结的PNN-PZT厚膜的电压位移曲线和电滞回线, 结果表明厚膜的有效压电常数为90 pm/V,剩余极化为6.00 kV/cm.     

Giant piezoelectric coefficient of PNN-PZT-based relaxor piezoelectric ceramics by constructing an R-T MPB

xTa-PNN-PZT piezoelectric ceramics with [0.55 Pb(Ni_1/3Nb_2/3)O₃ - 0.45 Pb(Zr_0.3Ti_0.7)O₃ - xwt%Ta₂O₅] + 1 wt% PbO composition (0 ≤ x ≤ 0.7) were prepared by conventional solid-state reaction method. Special attention was paid to the effect of Ta₂O₅ concentration on structural, dielectric, piezoelectric, and ferroelectric properties of these ceramics. In particular, rhombohedral-tetragonal morphotropic phase boundary was observed in PNN-PZT crystal structure near the composition of x = 0.5. At this point, volume fraction of rhombohedral phase was almost equal to that of tetragonal phase. In addition, the ceramic exhibited the optimum values of piezoelectric coefficient, bipolar strain, unipolar strain, and inverse piezoelectric coefficient, i.e., 1090 pC/N, 0.135%, 0.165%, and 1493 pm/V, respectively. Moreover, according to in-situ X-ray diffraction, piezoelectric force microscopy, and in-situ strain measurement results, phase structure of 0.5Ta-PNN-PZT revealed relatively stable piezoelectric behavior at 60 °C.     

Bi_2O_3掺杂0.35PNN-0.60PZT-0.05V_2O_5陶瓷的低温烧结特性研究

采用传统固相反应法制备了Bi_2O_3掺杂的0.35PNN-0.60PZT-0.05V_2O_5压电陶瓷。通过X线衍射、扫描电镜等测试手段对其烧结特性、晶体结构、微观形貌和介电性能进行研究。结果表明,Bi_2O_3掺杂能降低0.35PNN-0.60PZT-0.05V_2O_5陶瓷的烧结温度,影响相结构,改变微观形貌,并优化电学性能。当Bi_2O_3的质量分数为1.0%时,0.35PNN-(0.60-w%)PZT+0.05V_2O_5+w%Bi_2O_3实现900℃烧结,表现出优异的电学性能:压电常数d33=580pC/N,机电耦合系数kp=0.65,介电常数εr=6 100,介电损耗tanδ=0.006 1,品质因数Qm=65。     

电泳沉积PNN-PZT陶瓷厚膜及其电学性能研究

利用电泳沉积法分别在Al₂O₃/Pt和Pt金属基底上制备了厚度为10~40μm的0.3Pb(Ni_1/3Nb_2/3)O₃-0.7Pb(Zr,Ti)O₃(PNN-PZT)厚膜, 研究了pH值、Zeta电位与PNN-PZT悬浮液稳定性的关系, 探索了沉积电压、沉积时间与电泳沉积量的关系. 结果表明, 当添加少量分散剂聚乙二醇时, pH值在3.5~5.5较宽的范围内, 悬浮液具有较高的Zeta电位, 容易制得稳定的悬浮液. 沉积电压为21V, 沉积时间为5min时, 在Pt金属基底上电泳沉积得到的PNN-PZT厚膜, 经过1200℃烧结30min后, SEM显微结构分析表明, 厚膜致密, 晶粒得到充分生长. 电学性能测试显示此厚膜具有良好的铁电介电性能, 其剩余极化强度Pr可达20.8μC/cm², 介电损耗tanδ为3.2%.