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1.
A. I. D’Souza M. G. Stapelbroek P. N. Dolan P. S. Wijewarnasuriya R. E. DeWames D. S. Smith J. C. Ehlert 《Journal of Electronic Materials》2003,32(7):633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit
sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms
of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of
1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The
1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors
at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density
in the mid-10−15A/Hz1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth
in(f = 1 Hz, Vd = −60 mV, and Δf = 1 Hz) to dark current Id(Vd = −60 mV) was αSW-d = in/Id ∼ 1 × 10−3. The SWIR detectors measured at 0 mV under illuminated conditions had median αSW-P = in/Iph ∼ 7 × 10−6. For mid-wave infrared (MWIR) detectors, αMW-d = in/Id ∼ 2 × 10−4, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under
illuminated conditions at 98 K and −60 mV bias resulted in αMW-P = in/Iph = 4.16 ± 1.69 × 10−6. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias,
with a noise-current-to-photocurrent ratio, αMW-P, in the mid 10−6 range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, αLW-d = in/Id ∼ 6 × 10−6, for the best performers. The majority of the LWIR detectors exhibited αLW-d on the order of 2 × 10−5. The photo-induced 1/f noise had αLW-P = in/Iph ∼ 5 × 10−6. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if
this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps
are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as
a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular
bias. The 1/f noise was not a direct function of the applied bias. 相似文献
2.
O. Gravrand E. De Borniol S. Bisotto L. Mollard G. Destefanis 《Journal of Electronic Materials》2007,36(8):981-987
This paper aims at studying the feasibility of very long infrared wavelength (VLWIR) (12–18 μm) focal plane arrays using n-on-p planar ion-implanted technology. To explore and analyze the feasibility of such VLWIR detectors, a set of four Cd
x
Hg1−x
Te LPE layers with an 18 μ cutoff at 50 K has been processed at Defir (LETI/LIR–Sofradir joint laboratory), using both our “standard” n-on-p process and our improved low dark current process. Several 320 × 256 arrays, 30-μm pitch, have been hybridized on standard Sofradir readout circuits and tested. Small dimension test arrays characterization
is also presented. Measured photonic currents with a 20°C black body suggest an internal quantum efficiency above 50%. Typical
I(V) curves and thermal evolution of the saturation current are discussed, showing that standard photodiodes remain diffusion
limited at low biases for temperatures down to 30 K. Moreover, the dark current gain brought by the improved process is clearly
visible for temperatures higher than 40 K. Noise measurements are also discussed showing that a very large majority of detectors
appeared background limited under usual illumination and biases. In our opinion, such results demonstrate the feasibility
of high-performance complex focal plane arrays in the VLWIR range at medium term. 相似文献
3.
M. S. Han S. R. Hahn H. C. Kwon Y. Bin T. W. Kang J. H. Leem Y. B. Hou H. C. Jeon J. K. Hyun Y. T. Jeoung H. K. Kim J. M. Kim T. W. Kim 《Journal of Electronic Materials》1998,27(6):680-683
Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment. 相似文献
4.
Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face. 相似文献
5.
Motofumi Suzuki Kohei Kinoshita Shinji Jomori Hidehiko Harada Kaoru Nakajima Kenji Kimura 《Thin solid films》2007,515(22):8281-8284
The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi2 is confirmed by the surface peak analysis. Initially, FeSi2 grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure. 相似文献
6.
Yi Kai Zhou Sung Woo Choi Shigeya Kimura Shuichi Emura Shigehiko Hasegawa Hajime Asahi 《Journal of Superconductivity and Novel Magnetism》2007,20(6):429-432
GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire
substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray
diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth
at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence
emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested
that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism
occurs in the low-temperature-growth GaGdN. 相似文献
7.
Takuma Suzuki Hang-Ju Ko Agus Setiawan Jung-Jin Kim Koh Saitoh Masami Terauchi Takafumi Yao 《Materials Science in Semiconductor Processing》2003,6(5-6):519-521
We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar. 相似文献
8.
We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In0.53Ga0.47)0.88Mn0.12]As was observed by Hall measurements. The carrier concentration of [(In0.53Ga0.47)0.88Mn0.12]As was estimated to be more than 1.0 × 1021 cm–3 by using the Curie–Weiss fitting of the Hall coefficient R
H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As. 相似文献
9.
R. Meyer Hilde Hardtdegen R. Carius D. Grützmacher M. Stollenwerk P. Balk A. Kux B. Meyer 《Journal of Electronic Materials》1992,21(3):293-298
This paper presents a study of the structural and optical properties of strained GaInAs/ InP multiple quantum well (MQW) structures
fabricated by LP-MOVPE. The composition of the Ga
x
In1−x
As films ranged fromx = 0.17 tox = 1.0 and was determined by sputtered neutral mass spectrometry (SNMS) on thick layers. The structures of the MQW samples
with well widths from 1.5 to 5 nm were investigated by high resolution x-ray diffraction (HR-XRD). Simulations of the diffraction
patterns showed that transition layers of approximately 2 monolayer (ML) thickness with high lattice mismatch exist at the
interfaces. Photoluminescence (PL) measurements indicate well widths of a multiple of a monolayer with local variations of
one monolayer. The PL peak energies vary smoothly with the Ga concentration. These results were confirmed by optical absorption
measurements. 相似文献
10.
The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy
(CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a
cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The
products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH2 and C4H9 radicals. These undergo subsequent reactions to form the stable products C4H8, PH3 and H2, with smaller amounts of P and P2 being produced. The production of the sub-hydride PH2 using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing
the amount of carbon incorporated into the growing epitaxial layer. 相似文献