一种宽带矢量调制器的设计及其应用

矢量调制器是一种可以同时控制微波信号幅度和相位的器件。本文介绍了一种基于新型微带定向耦合器的宽带矢量调制器。新的耦合器结构克服了传统微带耦合器耦合度低、方向性差的问题,也不需要Lange耦合器复杂的加工工艺,在平衡放大器、移相器和衰减器等场合具有广泛的应用。其次,研究了用串联电感对衰减器中PIN二极管的寄生参数进行补偿的一种简单方法,以改善衰减器衰减量变化时的相位性能。该方法原理简单,可在一定带宽内替代复杂的平衡结构,并给出相近的性能。最后给出了矢量调制器的测试结果和它在自适应天线阵等实际系统中的应用情况,并讨论了用于提高载波和边带抑制、满足高精度要求的校准方法。     

A generalized cycle life model of rechargeable Li-ion batteries

A generalized first principles based charge-discharge model to simulate the cycle life behavior of rechargeable Li-ion batteries has been developed. The model is based on loss of the active lithium ions due to the electrochemical parasitic reaction and rise of the anode film resistance. The effect of parameters such as depth of discharge (DOD), end of charge voltage (EOCV) and overvoltage of the parasitic reaction on the cycle life behavior has been quantitatively analyzed. The experimental results obtained at charge rate of 1 C, discharge rate of 0.5 C, EOCV of 4.0 V and DOD of 0.4 were used to validate the cycle life model. Good agreement between the simulations and the experiments has been achieved up to 1968 cycles. Simulation of a battery subjected to multiple cycling regimes has also been demonstrated.     

A simplification method for capacitance models in AlGaN/GaN high electron mobility transistors under large drain voltage using channel analysis

This article analyzes the bias dependence of gate‐drain capacitance (C_gd) and gate‐source capacitance (C_gs) in the AlGaN/GaN high electron mobility transistors under a high drain‐to‐source voltage (V_ds) from the perspective of channel shape variation, and further simplifies C_gd and C_gs to be gate‐to‐source voltage (V_gs) dependent only at high V_ds. This method can significantly reduce the number of parameters to be fitted in C_gd and C_gs and therefore lower the difficulty of model development. The Angelov capacitance models are chosen for verifying the effectiveness of simplification. Good agreement between simulated and measured small‐signal S‐parameters, large‐signal power sweep, and power contours comprehensively proves the accuracy of this simplification method.     

Failure to diverge in African Great Lakes: The case of Dolicirroplectanum lacustre gen. nov. comb. nov. (Monogenea,Diplectanidae) infecting latid hosts

Speciation of fish in the African Great Lakes has been widely studied. Surprisingly, extensive speciation in parasites was only recently discovered in these biodiversity hotspots, notably in monogeneans (Platyhelminthes) from Lake Tanganyika. Diplectanum is a monogenean genus of which only a single species is known from the Great Lakes: Diplectanum lacustre (Diplectanidae) living on lates perches (Latidae) of Lake Albert. Despite their primary marine origin, latids have diversified in African freshwaters including several Great Lakes. In better-studied marine diplectanid species, incongruence between morphological and genetic differentiation was documented. As freshwater systems provide more opportunities for speciation than the marine realm, we ask whether diplectanids of Lates spp. of the Great Lakes underwent similar diversification as their hosts. Fresh and museum specimens of five African latid species (Lates angustifrons, L. mariae, L. microlepis, L. niloticus, L. stappersii) were examined for the presence of monogenean gill parasites. Monogeneans were characterised morphologically via morphometrics of sclerotised structures and genetically using nuclear and mitochondrial markers. Continuous morphological variation was documented in these parasites. In addition, the genetic distance, based on the COI region, between parasites of geographically isolated host species did not reach the level typically associated with distinct diplectanid species. Therefore, a single species of a newly described genus, Dolicirroplectanum lacustre gen. nov. comb. nov. is suggested to infect latid species in the examined basins. We discuss this parasite’s failure to diverge in the light of the congruence between the rate of molecular evolution in COI and host historical distribution.     

Singular perturbation of strictly positive realness

The robustness of the strictly positive real (SPR) condition of linear time-invariant multi-input, multi-output (LTI-MIMO) singularly perturbed systems is examined. A necessary and sufficient condition under which the full system is SPR, is proved. This robustness result is an extension of the analysis for the Popov-Kalman-Yakubovich lemma by V.R. Saksena and P.V. Kokotovic [7].     

稀土氧化物Eu_2O_3掺杂对CaCu3Ti_4O_(12)陶瓷微结构及介电特性的影响

以稀土氧化物Eu_2O_3为添加剂,采用固相反应法制备了不同掺杂比例(质量比:x=0,0.2%,0.5%,1%)的CCTO陶瓷样品,利用SEM、XRD、4294A型高精密阻抗分析仪等测试手段对样品的微观结构、介电性能和交流电阻率进行了测试分析.掺杂之后样品的晶格结构并未发生改变,但是样品内部相对晶相含量和晶粒平均尺寸减小,同时掺杂阻碍了样品内部晶界处富铜相的生成;纯CCTO的XRD图谱中分别出现了CuO、TiO_2和CaCO_3杂相,掺杂样品的图谱中并未出现上述杂相;样品的介电性能与相同组分材料内部的相对晶相含量,晶粒平均尺寸和晶界处富铜相有很大关系.Eu_2O_3掺杂提高了样品介电性能的频率和温度稳定性.当掺杂量为0.2%和0.5%时,样品的介电性能得到较好改善效果.样品在低频40Hz和高频3.5MHz的交流电阻率测量结果很好的验证了Eu_2O_3掺杂导致的微结构变化对样品介电性能的影响.     

Analysis of performance and device parameters of CIGS PV modules deployed outdoors

Two 20 W copper indium gallium diselenide photovoltaic modules were subjected to a thorough indoor assessment procedure, followed by outdoor deployment at the Nelson Mandela Metropolitan University as part of an ongoing study. The initial indoor measurement of maximum power output (P_MAX) of one of the modules was considerably higher than the manufacturer's rating (E.E. van Dyk, C. Radue and A.R. Gxasheka, Thin Solid Films 515 (2007) 6196). The modules were deployed on a dual-axis solar tracker and current-voltage characteristics were obtained weekly. In addition to the normal PV parameters of short-circuit current, open-circuit voltage, P_MAX, fill factor and efficiency, shunt and series resistances were also monitored. The performances of the two modules are compared and analyzed and the results presented in this paper.     

PDSOI CMOS SRAM单元临界电荷的确定

PDSOI CMOS SRAM单元的临界电荷(Critical Charge)是判断SRAM单元发生单粒子翻转效应的依据.利用针对1.2μm抗辐照工艺提取的PDSOI MOSFET模型参数,通过HSPICE对SRAM 6T存储单元的临界电荷进行了模拟,指出了电源电压及SOI MOEFET寄生三极管静态增益β对存储单元临界电荷的影响,并提出了在对PDSOI CMOS SRAM进行单粒子辐照实验中,电源电压的最恶劣偏置状态应为电路的最高工作电压.     

DC/DC变换器输入阶跃响应测试方法研究

介绍了DC/DC变换器输入阶跃响应的概念和测试原理,对该参数的测试技术进行了探索,开发出适合的测试方法和测试系统。通过产品的测试,验证了测试方法和测试系统的准确性。该测试方法符合SJ20646-97《混合集成电路DC/DC变换器测试方法》的规定。该测试方法和系统适用于大动态输入范围和大功率DC/DC变换器输入阶跃响应的测试。     

Set-membership methods applied to identify high-frequency elements of EMI filters

In order to enhance the performance of electromagnetic interference (EMI) filters, it is necessary to identify high-frequency parasitic elements of their passive components, mainly those related to the coupled inductors. Motivated by this issue, in this work a realistic high-frequency model is proposed for the coupled inductors. Actually, using interval analysis in particular the forward–backward contractor, a set-membership algorithm has been developed to estimate systematically the parasitic elements linked with the magnetic components. The main advantages of this algorithm compared to the fitting methods are the values of the estimated parameters are always positive and the corrupted data are taken into account. The comparison of the simulation results and the experimental data allows us to validate the proposed method.