二维三氧化钨纳米结构的合成及其在光电探测器中的应用

三氧化钨（WO₃）是制造晶体管和光电探测器的理想材料,虽然在WO₃纳米结构的生长方面已经完成了一些工作,但是制造足够长的理想型纳米线仍然是一个挑战。在众多的合成方法中,作者选择了化学气相沉积（CVD）方法合成WO₃纳米线,并对其在光电传感器中的应用进行了研究。影响WO₃纳米线成品率的主要因素是前体材料温度、基片位置、载气流速和生长持续时间。在合适的生长条件下生长的纳米线长度最长约为100 μm。这些WO₃纳米线可用来制造高性能的光电探测器,WO₃光电探测器具有灵敏度高、响应速度快、模块微型化等优良的器件性能,表明二维WO₃纳米线在光电探测器的制造中具有很大的优势。      

四论注入光敏器件的物理基础

叙述了从现象的发现到理论分析，然后用实验进行验证，最后利用这个现象研制成注入光敏器件的全过程，从而证明注入光敏器件有牢靠的物理基础。本文还分析了文献（１￣５，１０）中的几个主要不同论点及欠妥的讨论方法。     

Novel Optical Multichannel Detector for Laser Diffraction Particle Size Analyzer

The novel fan-shaped self-scanning photodiode array(SSPA)has the advantages of the high sensitivity with small device size and the serial video output mode.Using novel SSPA instead of the potodiode aray of a semicircuar annular detectors in the laser diffraction particle size analyzer,these correctness of the results are verified by various particle samples measuring and the practical running over ten thousand hours in the desuplhuration tower.     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

Numerical Simulation of Spectral Response for 650 nm Silicon Photodetector

The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.     

Double Beams to Measure Three-dimensional Rigid Body Displacements

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MSM光电探测器特性二维数值模拟

为了解释在InGaAs金属-半导体-金属光电探测器(MSM—PD)内光产生载流子的行为及器件内电场分布,本文用有限元法数值求解了含复合项的二维泊松方程、电流连续方程及电荷俘获速率方程。得到了InGaAs MSM光电探测器的电流—电压特性及器件内电场和载流子分布。模拟结果解释了实验观察到的雪崩击穿现象,并表明电子电流比空穴电流提前饱和。     

Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector

According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.     

MSM结构硅光探测器

采用 MSM 双肖特基势垒结构制作的硅光电二极管,在0.2～1.10μm波长范围内具有高的响应度。这种结构还可以构成横向光晶体管,共发射极电流增益为2～4倍。实验表明,MSM 结构是改善硅光电探测器光谱响应的良好结构。     

Broadband,high-sensitivity self-powered ferroelectric LuMnO3-based photodetector with large photocurrent output

The broadband spectrum detection from ultraviolet to near-infrared is hankered in the photoelectric applications of imaging, sensing and communication. Here, a new self-powered photodetector based on ferroelectric LuMnO₃ thin film with a narrow bandgap of 1.46 eV exhibits high-sensitivity ultraviolet–visible–near infrared photodetection properties. The responsivity (R) and detectivity (D*) in sunlight are 0.4 A/W and 7.05 × 10¹¹ Jones, which are much higher than that of other ferroelectric photodetectors. Moreover, under the monochromatic light (900 nm), the R and D* can reach 0.39 A/W and 6.89 × 10¹¹ Jones. The outstanding photodetection performances owed to the large photocurrent output, where the short-circuit current density can reach 10.5 mA/cm² under 1 sun illumination. The synergistic effect of ferroelectric photovoltaic effect and interface barrier effect demonstrates that the multi-driving forces can achieve high dissociation efficiency for photon-generated carriers. The excellent photodetection performances open up new application of ferroelectric materials in broadband self-powered photodetectors.