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1.
Xiaopo Wu Yangming Shi Weibo Meng Xiaofei Ma Nian Fang 《International Journal of Satellite Communications and Networking》2019,37(3):283-291
Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military. 相似文献
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制作压力传感器时,在二氧化硅层上淀积多晶硅膜,既可利用优良的机械特性,又可保证压敏电阻与衬底间具有良好的绝缘性,由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明,这类传感器具有灵敏度好,精度高等特点,电路工作范围为0-250℃,且具有良好的温度稳定性。 相似文献
4.
Shubneesh Batra Nanseng Jeng Akif Sultan Kyle Picone Surya Bhattacharya Keun-Hyung Park Sanjay Banerjee David Kao Monte Manning Chuck Dennison 《Journal of Electronic Materials》1993,22(5):551-554
When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal
budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface
to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon
substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the
leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in
the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection
from the interface. 相似文献
5.
Experimental measurements and full-2D numerical simulations show that velocity saturation effects in polysilicon thin-film transistor (TFTs) cannot be neglected in order to obtain a precise modelling of output characteristics. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we have developed a new quasi-2D model, that takes into account both velocity saturation effects and the presence of a longitudinal electric field in the Poisson's equation, and includes the effect of parasitic bipolar transistor (PBT) action to reproduce kink effect. The agreement of the quasi-2D model with experimental data from p-channel polysilicon TFTs is very satisfactory even for short channel device, and the presence of a velocity-saturated region with a nearly constant free carrier concentration is reproduced without introducing further assumptions. 相似文献
6.
高亮度、长寿命的热场致发射(Thermal field emitter)阴极自七十年代中期已受到人们的关注和重视,历经十多年在理论分析、工艺制备和实验研究上做了大量工作之后,于1988年在电子束曝光机上的应用中取得了突破性进展。用晶向为(100)的钨和具有低逸出功的锆制成的(Zr/O/W)热场致发射阴极在四千小时的使用寿命下亮度值超过六硼化镧阴极一个数量级以上,最近的实验结果表明:在工件台上小束斑下能得到接近两千安培每平方厘米的束流密度,而且四十小时内束流稳定度接近千分之一。显然,这几个表征曝光系统综合技术性能的重要指标,说明多年困扰于各种电子束曝光系统(特别是高斯圆斑电子束系统)在高分辨率情况下生产率较低的技术难题已经得到了比较圆满的解决。 八十年代末期,当热场致发射电子源曝光系统的技术关键解决后,这项技术就成为技术发达国家,特别是美国和日本,在电子束曝光领域进行技术竞争的热点;九一年五月底在美国召开的国际三束会议上有关场致发射阴极和MEBES—4型机已经采用TFE的最新报道充分证实了这项技术在电子束曝光技术应用中的重要地位和发展潜力。 相似文献
7.
Mitsutoshi Miyasaka 《Journal of the Society for Information Display》2007,15(7):479-484
Abstract— Suftla is a technology that is used to transfer polycrystalline silicon (polysilicon) thin‐film‐transistor (TFT) circuits from an original glass substrate to a plastic sheet. The electronic devices in the next generation will be thin, lightweight, and will handle huge amounts of data, yet consume less energy. Suftla technology, together with high‐performance polysilicon TFTs, meets all these requirements because we have developed a variety of smart flexible electronic devices, such as thin paperback‐sized displays and microprocessors. Suftla will usher in a new era of life‐enhancing flexible microelectronics. 相似文献
8.
现有基于人工提取特征的复杂体制雷达辐射源信号识别方法时效性低,识别准确率不佳. 为此,提出了一种基于多学习单元卷积神经网络的识别方法. 首先对辐射源信号的模糊函数进行高斯平滑,以校正噪声带来的毛刺与畸变;然后提取其正交切片作为进一步的特征提取对象;最后构建多学习单元卷积神经网络,学习和提取正交切片深层、泛在的特征,并通过softmax分类器进行分类识别. 仿真实验结果表明,所提方法在信噪比为-2 dB时对6类典型雷达信号的整体平均识别率均保持在99.86%以上,即便是在-6 dB环境中,雷达信号的识别率也可达到88.50%,在极低信噪比条件下具有良好的性能和可行性. 相似文献
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Takatoshi Yamada Purayath Robert Vinod Doo-Sup Hwang Hiromichi Yoshikawa Shin-ichi Shikata Naoji Fujimori 《Diamond and Related Materials》2005,14(11-12):2047
This paper describes a self-aligned fabrication process for diamond gated field emitter array (FEA). Utilizing the non-conformal coverage sputtering conditions of silicon oxide, an interesting “sphere on cone” structure is formed on diamond nano tip array, which is the key point of gate hole opening process. This structure causes shadowing at certain regions of side-wall during Ti / Au gate metal deposition. Removal of “sphere” by wet etching leads to the successful fabrication of a single crystalline diamond gated FEA. Scanning electron microscope observations reveal the fabrication of a uniform emitter array with tip radius of curvature (20 nm) and gate hole (1.4 μm). We also confirmed that no noticeable physical damage exists on tip. In field emission characteristics of the fabricated single crystal diamond gated FEA, gate voltage control of field emission current is realized. 相似文献