排序方式: 共有44条查询结果,搜索用时 15 毫秒
1.
量子阱红外探测器能带结构的计算 总被引:1,自引:1,他引:0
利用电子波在阱与垒的界面上的反射及干涉效应,计算了量子阱红外探测器(QWIP)的能带结构,并对其适用性进行了分析和讨论。通过与K-P模型比较发现,本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下,用两种方法计算得到的AlGaAs/GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明,在较宽的范围内,本方法对QWIP能带结构的计算是适用且简便的。 相似文献
2.
单轴压应变量子阱红外探测器吸收波长的研究 总被引:1,自引:0,他引:1
研究了单轴压应力对GaAs/AlGaAs/GaAs量子阱红外探测器(QWIP)吸收波长的影响。以量子阱电子干涉方法以及单轴压应力作用下量子阱应变理论为基础,分析了GaAs/AlGaAs/GaAs量子阱导带中子能级与应变的关系。理论上计算了单轴应力下四个QWIP吸收波长与应变的关系。结果表明,E1与E<1>能级之间的吸收波长和E(1)与EF能级之间的吸收波长随应变的增大而减小的幅度比E1与EF能级之间的吸收波长和E(0)与E1能级之间吸收波长随应变的增大减小的幅度大。 相似文献
3.
Fu Y Willander M 《红外与毫米波学报》2002,21(5):321-326
IntroductionInfrareddetectortechniquehasbeenakeyfactorinthedevelopmentoftheinfraredtechnologyformorethan 4 0 years .Since 1970 ,semiconductorslikeInSbandHgCdTehavebeentheprincipalmaterialsforvariousinfrareddetectorapplications .Theformatoftheinfrareddetectormotivatedbysmartthermalimagingsystemchangedfromsingleelementdevicetofocalplanarrays(FPAs)inthemiddleof 80’s [1].Today’stechnologyofinfrareddetectorconcentrateslargelyonfocalplanarrays ,expeciallyforsensitive ,homogeneousandlargeformatscaledevices .HgCdTe... 相似文献
4.
5.
设计了一种偏压可调电流镜积分(Current Mirroring Integration,CMI)红外量子阱探测器焦平面CMOS读出电路。该电路适应根据偏压调节响应波段的量子阱探测器,其中探测器偏压从0.61 V到1.55V范围内可调。由于CMI的电流反馈结构,使得输入阻抗接近0,注入效率达0.99;且积分电容可放在单元电路外,从而可以在一定的单元面积下,增大积分电容,提高了电荷处理能力和动态范围;为提高读出电路的性能,电路加入撇除(Skimming)方式的暗电流抑制电路。采用特许半导体(Chartered)0.35 m标准CMOS工艺对所设计的电路(16×1阵列)进行流片,测试结果表明:在电源电压为3.3V,积分电容为1.25pF时,电荷处理能力达到1.3×107个电子;输出摆幅达到1.76V;功耗为25mW;动态范围为75dB;测试结果显示CMI可应用于高性能FPA。 相似文献
6.
Henk Martijn Urban Halldin Per Helander Jan Y. Andersson 《Analog Integrated Circuits and Signal Processing》2000,22(1):71-79
A readout circuit for a 640 × 480 pixels FPA (focal plane array) has been successfully designed, fabricated and tested. The circuit solution is based on a per pixel source-follower direct injection (SFDI) pre-amplifier. Signal multiplexing is performed in both X and Y direction. The pixel size is 25 m × 25m. The chip is optimized for a QWIP (quantum well infrared photodetector) operating at a temperature of 70 K. The circuit has been realized in a standard 0.8 m CMOS process. 相似文献
7.
《低温学》2018
Temperature is an extremely important parameter for space-borne infrared detectors. To develop a quantum-well infrared photodetector (QWIP), a high-efficiency Stirling-type pulse tube cryocooler (PTC) has been designed, manufactured and experimentally investigated for providing a large cooling power at 40 K cold temperature. Simulated and experimental studies were carried out to analyse the effects of low temperature on different energy flows and losses, and the performance of the PTC was improved by optimizing components and parameters such as regenerator and operating frequency. A no-load lowest temperature of 26.2 K could be reached at a frequency of 51 Hz, and the PTC could efficiently offer cooling power of 3 W at 40 K cold temperature when the input power was 225 W. The efficiency relative to the Carnot efficiency was approximately 8.4%. 相似文献
8.
9.
在多量子阱红外探测器外延材料制备中,由于器件响应波长对量子阱的阱宽和垒高变化敏感,因此对外延材料的制备有很高的要求.本文中我们利用光致荧光谱(PL)对GaAs/AIGaAs多量子阱红外探测器材料进行了测量和计算,从而在器件工艺前,快速确定器件的探测波长.以光致荧光光谱对GaAs/AIGaAs多量子阱红外探测器材料进行测试,通过理论计算,得到多量子阱红外探测器探测波长.计算得到的理论响应波长与实际器件的响应波长有良好的一致性,证明用光荧光谱对外延材料进行测量并计算,能够更加有效地开展器件研究工作.同时,我们在低温下测量了外加偏压下器件暗电流情况,以及液氮温度下,500K黑体辐射情况时,信号噪声比达到235.3. 相似文献
10.