单粒子效应对航天器的威胁及空间飞行试验评论（二）

列举了若干航天器因单粒子效应而出现的异常或故障。阐述了单粒子效应空间飞行试验方法和预估方法。总结了多颗航天器单粒子效应空间飞行试验结果。依据空间飞行试验结果，对静止卫星、低太阳同步轨道卫星和椭圆轨道卫星在太阳宁静和太阳耀斑期间单粒子效应作了比较。     

Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Through revising the process of charge collection for reversed drain-bulk junction,a bias-dependent SPICE model is proposed which includes the bipolar amplification effect that cannot be ignored in PMOS.The model can capture the plateau effect,and produce current and voltage pulse shapes and widths that are consistent with TCAD simulation.Considering the case of connecting load,it is still valid.For combination and sequential logic circuits,the SET pulsewidths and LET upset threshold from SPICE model are consistent with TCAD simulations.     

基于FPGA硬件的单粒子翻转模拟技术

由于航空航天活动越发复杂,深空通信和姿态控制等航空航天电子系统大量采用集成电路芯片以提高各方面性能。随着集成电路工艺节点的进一步缩小,电路受到单粒子效应而发生错误的概率越来越大。评估集成电路对单粒子翻转（Single event upset, SEU）的敏感性对航空航天的发展具有重要意义。电路规模的增加和系统功能集成度的提高给评估速度带来了严峻挑战。本文提出了一种能适用于超大规模集成电路（Very large scale integration, VLSI）的快速故障注入方法。该方法可通过脚本自动分析电路,并修改逻辑使电路具备故障注入功能。实验结果表明,该方法实现的故障注入速度可以达到纳秒级,可大幅缓解电路规模和评估时间之间的矛盾,从而满足VLSI的评估需求。     

Low complexity SEU mitigation technique for SRAM-based FPGAs

An internal single event upset (SEU) mitigation technique is proposed, which reads back the configuration frames from the static random access memory (SRAM)-based field programmable gate array (FPGA) through an internal port and compares them with those stored in the radiation-hardened memory to detect and correct SEUs. Triple modular redundancy (TMR), which triplicates the circuit of the technique and uses majority voters to isolate any single upset within it, is used to enhance the reliability. Performance analysis shows that the proposed technique can satisfy the requirement of ordinary aerospace missions with less power dissipation, size and weight. The fault injection experiment validates that the proposed technique is capable of correcting most errors to protect space-borne facilities from SEUs.     

基于CMOS图像传感器的皮卫星成像系统设计

为满足皮卫星对成像系统的特殊要求,设计了基于CMOS图像传感器的成像系统。简单阐述了系统设计方案,详细说明了系统关键模块包括对CMOS相机的控制以及图像传输等在FPGA中的实现过程,并从器件选型、TMR技术应用等方面讨论了系统的可靠性。该系统应用于皮卫星样机中,通过了高低温试验、温度冲击试验、粒子辐照试验等,验证了其可行性。     

大学校园一卡通的研究与实现

校园"一卡通",就是在学校范围内,凡有现金、票证或需要识别身份的场合均采用一卡来完成,在校内集学生证、工作证、身份证、借书证、医疗证、会员证、餐卡、钱包、电话卡、存折等于一卡,实现"一卡在手,走遍校园",是数字化校园中信息采集的基础工程之一,对学校的管理和决策支持具有重大意义。通过基于FRID的校园一卡通系统的应用,实现了4大门类的100多种应用。金融消费:通过校园卡的数字钱包功能,可直接支付在校内的各种费用,如收缴学费、食堂就餐、商店购物、班车乘坐等都可通过校园卡来完成。身份识别:可用于重要场所的身份识别、图书借阅、门禁出入、上机管理、车辆收费等。金融业务:与校园卡同时发放的银行卡具有普通银行卡的功能,利用校园内各处的自助充值设备(圈存机),可自助完成银行帐户中的金额转存入电子钱包的过程。学校管理:学校的各部处,均可根据校园"一卡通"系统所提供的数据信息,制定出相应的管理办法,实现高效的工作管理,提高管理水平。     

空间DSP加载系统可靠性设计

在空间环境中,长时间运行的空间飞行器信息处理系统存储器容易发生单粒子翻转现象(SEU),而单粒子翻转现象是导致空间飞行器失效的主要原因之一。基于此,通过分析SEU现象对不同类型存储器的影响,阐述SEU现象对加载可靠性的影响。通过重新设计加载系统结构,并引入三模冗余、检纠错编码和定时刷新FLASH存储器的方法,降低系统加载时由于SEU而失败的概率,提高系统加载运行的可靠性。     

星用微处理器在轨单粒子翻转率预估方法研究

运用程序占空比概念及故障注入技术对星用微处理器动态和静态单粒子翻转率间的关系进行了研究,并将预估结果与国外在轨飞行监测数据进行了对比。结果表明,由程序占空比计算所得动态单粒子翻转率可对星用微处理器在轨单粒子翻转率进行合理预估;故障注入技术是灵活、方便的动态单粒子翻转率预估方法。     

Single event soft error in advanced integrated circuit

As technology feature sizes decrease, single event upset (SEU), and single event transient (SET) dominate the radiation response of microcircuits. Multiple bit upset (MBU) (or multi cell upset) effects, digital single event transient (DSET) and analogue single event transient (ASET) caused serious problems for advanced integrated circuits (ICs) applied in a radiation environment and have become a pressing issue. To face this challenge, a lot of work has been put into the single event soft error mechanism and mitigation schemes. This paper presents a review of SEU and SET, including: a brief historical overview, which summarizes the historical development of the SEU and SET study since their first observation in the 1970's; effects prominent in advanced technology, which reviews the effects such as MBU, MSET as well as SET broadening and quenching with the influence of temperature, device structure etc.; the present understanding of single event soft error mechanisms, which review the basic mechanism of single event generation including various component of charge collection; and a discussion of various SEU and SET mitigation schemes divided as circuit hardening and layout hardening that could help the designer meet his goals.     

PDSOI CMOS SRAM单元临界电荷的确定

PDSOI CMOS SRAM单元的临界电荷(Critical Charge)是判断SRAM单元发生单粒子翻转效应的依据.利用针对1.2μm抗辐照工艺提取的PDSOI MOSFET模型参数,通过HSPICE对SRAM 6T存储单元的临界电荷进行了模拟,指出了电源电压及SOI MOEFET寄生三极管静态增益β对存储单元临界电荷的影响,并提出了在对PDSOI CMOS SRAM进行单粒子辐照实验中,电源电压的最恶劣偏置状态应为电路的最高工作电压.