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排序方式: 共有120条查询结果,搜索用时 46 毫秒
1.
Xiang Lu S. Sundar Kumar Iyer Jin Lee Brian Doyle Zhineng Fan Paul K. Chu Chenming Hu Nathan W. Cheung 《Journal of Electronic Materials》1998,27(9):1059-1066
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII)
for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high
cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation
of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous
buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique
is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant
in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen
induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure
combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force
which is sufficient to overcome the silicon fracture resistance. 相似文献
2.
SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si. 相似文献
3.
4.
Adriana Giordana R. Glosser Keith Joyner Gordon Pollack 《Journal of Electronic Materials》1991,20(11):949-958
Photoreflectance (PR) was used to study SIMOX materials produced under various fabrication conditions. The position, amplitude
and shape of the 3.4 eV PR response were monitored for three different sets of samples which provided information about the
crystalline quality of the top silicon layer. Each sample of the first set underwent different annealing conditions. A second
set of six samples was arranged such that one sample was removed at a different step of the process involving three implantation-anneal
cycles. A third set of four samples was implanted with different doses of oxygen. In the first case the PR signal improved
with longer annealing times and higher temperatures; in the second case the PR signal appeared to deteriorate with each cycle
undergone by the samples, while in the third case the degradation of the structure increased with the increased implantation
dosage. Transmission electron microscopy (TEM) was also performed in the last two cases, and its results supported the PR
conclusions. 相似文献
5.
日趋成熟的SOI技术 总被引:3,自引:0,他引:3
SOI技术作为 2 1世纪的硅集成技术正在日益受到人们的青睐。从SOI技术的发展过程、制备工艺、开发应用及市场预测几个方面评述了SOI技术现状及前景。 相似文献
6.
7.
Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material 总被引:1,自引:0,他引:1
The defects and microstructure of low-dose (<0.7 × 1018 cm−2), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature
by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3×1018 cm−2), annealed SIMOX originate from unfaulting of long (∼10 μm), shallow (0.3 μm), extrinsic stacking faults generated during
the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer
evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried
oxide with a reduced density of Si islands in the buried oxide. 相似文献
8.
9.
本文了离子束科学技术新领域新的重大进展-从作为半导体掺杂手段剂量离子注入到高剂量离子注入以合成新材料。文中讨论了高剂量注入的物理效应,利用高剂量氧注入硅合成SIMOX材料的物理过程以及离子束合成的多种应用。 相似文献
10.
介绍了采用全剂量SIMOX SOI材料制备的0.8μm SOI CMOS器件的抗总剂量辐射特性,该特性用器件的阈值电压、漏电流和专用集成电路的静态电流与高达500krad(Si)的总剂量的关系来表征.实验结果表明pMOS器件在关态下1Mrad(Si)辐射后最大阈值电压漂移小于320mV,nMOS器件在开态下1Mrad(Si)辐射后最大阈值电压漂移小于120mV,器件在总剂量1Mrad(Si)辐射后没有观察到明显漏电,在总剂量500krad(Si)辐射下专用集成电路的静态电流小于5pA. 相似文献