排序方式: 共有22条查询结果,搜索用时 15 毫秒
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平板显示器件在灰度实现方式上与CRT存在较大差异.本文研究了SMPDP的发光特性和Gamma特性,提出了一种新的针对于SMPDP的反Gamma矫正方法,此方法综合考虑了SMPDP发光特性、环境光以及人眼视觉系统的影响,并在此基础上进行了优化.为了进一步提高SMPDP的视频图像质量,人眼系统对于亮度的阈值也被考虑到此方法中.此方法在SMPDP视频驱动电路中利用LUT作评估,实验结果表明本文提出的方法相对于传统方法能更好地提高视频图像质量.由于易于实现、精确度高,此方法也可用于其它的平板显示器件. 相似文献
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A new shadow mask plasma display panel (SMPDP) is presented in this article. The unsymmetrical geometry structure of the discharge cell is its main feature. A macro-cell with a ratio of 40:1 was designed and fabricated. The geometrical parameters and electrode's structure of the discharge cell of the unsymmetrical SMPDP were optimized. Compared with current SMPDP, its luminous efficiency was obviously improved. Then a 32-inch wide video graphics array (WVGA) unsymmetrical SMPDP with a luminous efficacy of 1.8 Lm/W was produced. 相似文献
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Xiong Zhang Yan Tu Jian Zhang Lanlan Yang Youyan Jiang Baoping Wang 《Journal of the Society for Information Display》2005,13(11):961-965
Abstract— A novel round subpixel and triangle‐arrangement shadow‐mask plasma‐display panel (SMPDP) suitable for high‐resolution displays has been investigated. The discharge efficiency of this high‐resolution SMPDP and the AC coplanar PDP (ACCPDP) has been calculated separately. The variance of the discharge efficiency with pressure and xenon content will be reported. Results indicate that the SMPDP can reach a higher efficiency for high‐resolution displays than conventional ACCPDPs. 相似文献
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两种新型SMPDP驱动波形下的列电压动态范围的研究 总被引:1,自引:0,他引:1
荫罩式等离子体显示器(SMPDP)是一种由金属荫罩板代替传统绝缘障壁的新型PDP。本文以42寸SMPDP为实验平台,提出了两种基于CLEAR驱动原理的新型驱动波形:窄脉冲擦除寻址波形、维持斜坡擦除波形,并分别对这两种波形下的列数据电压(Va)的动态范围作了相应测量和分析,从而得出维持斜坡擦除波形在改善SMPDP的发光一致性和均匀性上有明显优势,有助于提高SMPDP的驱动性能。 相似文献
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采用放大单元的方法研究了表面放电结构、对向放电结构和新型荫罩式等离子体显示屏(SMPDP)的放电过程。分别制作了放大倍数为40的表面放电结构、对向放电结构和荫罩式结构PDP的放大单元。建立了放大单元的光辐射特性测试系统,采用高速ICCD拍摄了相应结构的放电过程并分析研究了各自的放电特性。结果表明,SMPDP的放电过程为非均匀场中的对向放电过程,具有较表面放电结构和对向放电结构更优越的放电性能。 相似文献
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Qing Li Xiong Zhang Yongming Tang Yan Tu Zhaowen Fan Lanlan Yang Yaosheng Zheng Baoping Wang 《Journal of the Society for Information Display》2006,14(8):695-700
Abstract— A newly developed 25‐in. SVGA ACPDP containing a shadow mask (SMPDP) is presented. Some modifications have been introduced into the fabrication technique. Instead of using conventional Ag in a thick‐film process, an aluminum bus electrode without ITO was fabricated on the front substrate, which was made by using a thin‐film process. Due to this improvement, excellent uniformity of the dielectric layer has been achieved. Only five necessary process steps are required during the manufacturing process of the front/rear substrates for the SMPDP. The panel capacitance was reduced by over 20% by adopting an ITO‐less structure, which enables high‐speed addressing for large‐capacity displays. The color purity was improved by applying a high Xe content. 相似文献
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