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Kousuke Miyaji Shinji NodaTeruyoshi Hatanaka Mitsue Takahashi Shigeki Sakai Ken Takeuchi 《Solid-state electronics》2011,58(1):34-41
A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0 V power supply operation in Ferroelectric (Fe-) NAND flash memories. The proposed SCSB scheme only self-boosts the channel voltage of the cell to which the program voltage VPGM is applied in the program-inhibit NAND string. The program disturb is well suppressed at the 1.0 V power supply voltage in the proposed program scheme. The power consumption of the Fe-NAND at VCC = 1.0 V decreases by 86% compared with the conventional floating gate (FG-) NAND at VCC = 1.8 V without the degradation of the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.7 times and the 9.3 GB/s write throughput of the Fe-NAND SSD is achieved for an enterprise application. 相似文献
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