On a simple and accurate quantum correction for Monte Carlo simulation

We investigate a quantum-correction method for Monte Carlo device simulation. The method consists of reproducing quantum mechanical density-gradient simulation by classical drift-diffusion simulation with modified effective oxide thickness and work function and using these modifications subsequently in Monte Carlo simulation. This approach is found to be highly accurate and can be used fully automatically in a technology computer-aided design (TCAD) workbench project. As an example, the methodology is applied to the Monte Carlo simulation of the on-current scaling in p- and n-type MOSFETs corresponding to a 65 nm node technology. In particular, it turns out that considering only the total threshold voltage shift still involves a significant difference to a Monte Carlo simulation based on the combined correction of oxide thickness and work function. Ultimately, this quantum correction permits to consider surface scattering as a combination of specular and diffusive scattering where the conservation of energy and parallel wave vector in the specular part takes stress-induced band structure modifications and hence the corresponding surface mobility changes on a physical basis into account.     

Power·delay product in COSMOS logic circuits

In this simulation work, we use COSMOS logic devices—a novel single gate CMOS architecture recently announced [1]—in multi-input logic gates, assessing its performance in terms of power·delay product. We consider three different multi-input logic circuits: a two-input NOR gate, a three-input NOR gate, and a three-input composite NOR/NAND (NORAND) gate. For this power·delay analysis, the transient TCAD simulations are employed in a mixed-mode approach where circuit and device simulations are coupled together, culminating in the delay response of the circuits as well as the static/dynamic current components. The analysis shows that all circuits, except the 3-input NOR gate, has acceptable characteristics at low-power applications and static leakage limits all COSMOS circuits at high-bias conditions.     

Evolution of Current Transport Models for Engineering Applications

An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer’s perspective and an outlook on future research directions is given.     

14 nm FinFET栅围寄生电容的建模与拟合

提出了一种基于保角映射方法的14 nm鳍式场效应晶体管(FinFET)器件栅围寄生电容建模的方法。对FinFET器件按三维几何结构划分寄生电容的种类,再借助坐标变换推导出等效电容计算模型,准确表征了不同鳍宽、鳍高、栅高和层间介质材料等因素对寄生电容的依赖关系。为了验证该寄生电容模型的准确性,对不同结构参数的寄生电容进行三维TCAD仿真。结果表明,模型计算结果与仿真结果的拟合度好,准确地反映了器件结构与寄生电容之间的依赖关系。     

单型掺杂柱电极的3D硅像素探测器的器件与制造工艺研究

设计了一种新的3D硅像素探测器的器件结构以简化制造工艺.该结构仅包含一种掺杂类型的柱状电极.通过工业级TCAD仿真对这种结构的电学特性进行了深入研究,阐述了它的技术优势及潜在缺陷.同时研究了制造这种3D硅像素探测器的特殊工艺流程和相关关键工艺,并给出了主要工艺结果.     

金属氧化物半导体场效应晶体管中总剂量效应导致的阈值电压漂移研究现状

为了研发可用于核与辐射应急响应与准备的机器人,对比了多种具有不同结构和生产工艺的金属氧化物半导体场效应晶体管(MOSFET)由于总剂量效应(TID)导致的阈值电压漂移(ΔVth)。注意到了栅宽和栅长对器件耐辐射能力的影响在体CMOS器件和纳米线(NW) MOSFET器件之间、高的和低的工艺节点之间的不同,并从辐射诱导的窄通道效应(RINCE)和辐射诱导的短通道效应(RISCE)两方面解释了这种区别的原因。发现近年来前沿的一些研究在考虑辐射效应时,修正了负偏压不稳定性(NBTI)的影响。并讨论了几种新型器件包括锗沟道、氮化镓沟道管和具有特殊几何布局的晶体管。此外,介绍了计算机辅助设计技术(TCAD)在几种新型场效应管的机理研究和建模验证中的应用。     

一种低功耗4H-SiC IGBT的仿真研究

针对传统沟槽栅4H-SiC IGBT关断时间长且关断能量损耗高的问题,文中利用Silvaco TCAD设计并仿真了一种新型沟槽栅4H-SiC IGBT结构。通过在传统沟槽栅4H-SiC IGBT结构基础上进行改进,在N ⁺缓冲层中引入两组高掺杂浓度P区和N区,提高了N ⁺缓冲层施主浓度,折中了器件正向压降与关断能量损耗。在器件关断过程中,N ⁺缓冲层中处于反向偏置状态的PN结对N ^-漂移区中电场分布起到优化作用,加速了N ^-漂移区中电子抽取,在缩短器件关断时间和降低关断能量损耗的同时提升了击穿电压。Silvaco TCAD仿真结果显示,新型沟槽栅4H-SiC IGBT击穿电压为16 kV,在15 kV的耐压设计指标下,关断能量损耗低至4.63 mJ,相比传统结构降低了40.41%。     

RF performance enhancement in multi-fin TFETs by scaling inter fin separation

This paper deals with the extraction of RF metrics of multi-fin Tunnel FET (TFET) with the inter fin separation (IFS) scaled up to 1 nm. The structure of multi-fin TFET is designed by varying the number of fins (N) from 1 to 5. As the number of fins increases, the drive current (I_D) gets multiplied and the maximum I_D of 76 µA can be achieved for N = 5. Higher I_D is obtained without compromising the leakage current (I_OFF) which is in the range of femto amperes. For the various values of IFS, RF metrics such as intrinsic gain (A₀), unity gain cut-off frequency (f_t), maximum oscillation frequency (f_max), and admittance (Y) parameters are extracted for multi-fin TFETs. The results show for lesser values of IFS, higher intrinsic gain is obtained and the value does not affect as N increases. The maximum value of f_t and f_max is obtained because of the electrostatic coupling between the two adjacent fins. The Y parameters are extracted at an operating frequency of 10 GHz. It can be seen that Y parameters offer better values as the number of fins and IFS increases. This is due to the larger value of gate to drain capacitance (C_gd) which occurs because of the parasitic effect for higher values of IFS.     

Electrical performance study of 25 nm Ω-FinFET under the influence of gamma radiation: A 3D simulation

In this research paper, a 3D process simulation of 25 nm n-channel Ω-FinFET and the effect of Gamma radiation on device characteristics have been studied. Device simulations are carried out under the influence of Gamma radiation under varying does conditions from 100 Krad (SiO₂) to 10 Mrad (SiO₂). Effects of Gamma radiation on the threshold voltage, transfer characteristics, drive current, off-state leakage current and subthreshold characteristics have been studied. Extracted parameters for virgin and irradiated devices have been compared in order to understand the degradation in the electrical characteristics of the Ω-FinFET under study. Simulation results under the low drain and high drain bias has been reported and discussed. It is found that Ω-FinFET delivers better performance under irradiation as compared with conventional single gate MOS structures. Ω-FinFET is shown to be significantly tolerant to gamma radiation upto dose of 5 Mrad (SiO₂). In addition, the influence of quantum effects on this nanoscale device is investigated in detail. Sentaurus simulation results obtained has been compared with the reported experimental data.     

非对称电阻场板场效应器件击穿特性仿真分析

利用TCAD仿真研究一种二维紧耦合电阻场板电流调制原理下的物理模型与最优化结构。通过优化关键工艺与材料参数,改善器件漂移区尖峰电场,最终在相同漂移区掺杂下击穿电压较一维PN结理论击穿电压提升273%,相同归一化击穿电压10%变化范围下,漂移区电荷变化允许冗余范围比现有传统PN超结拓宽15倍。相较于对称电阻场板场效应器件,在现有工艺下非对称优化电阻场板场效应器件能够更好的实现结构小型化与高密度的设计。