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1.
I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献
2.
本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。 相似文献
3.
Experimental measurements and full-2D numerical simulations show that velocity saturation effects in polysilicon thin-film transistor (TFTs) cannot be neglected in order to obtain a precise modelling of output characteristics. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we have developed a new quasi-2D model, that takes into account both velocity saturation effects and the presence of a longitudinal electric field in the Poisson's equation, and includes the effect of parasitic bipolar transistor (PBT) action to reproduce kink effect. The agreement of the quasi-2D model with experimental data from p-channel polysilicon TFTs is very satisfactory even for short channel device, and the presence of a velocity-saturated region with a nearly constant free carrier concentration is reproduced without introducing further assumptions. 相似文献
4.
TFT LCD的过压驱动技术探讨 总被引:2,自引:2,他引:0
过压驱动技术是提高液晶显示器响应速度的关键技术之一。文章分析了TN型TFT液晶显示的原理及影响响应时间的因素,探讨了过压驱动的原理和系统结构,对灰阶亮度上升和下降两种状态下的应用进行了说明。对液晶显示系统进行了实验分析以及响应时间的测量,结果表明通过过压驱动可以在很大程度上提高液晶显示器的响应时间,有效改善显示画面的动态模糊问题。在0℃的环境温度下,最大灰阶响应时间不超过80ms。 相似文献
5.
Suehye Park Edward Namkyu Cho Ilgu Yun 《Journal of the Society for Information Display》2013,21(8):333-338
Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative VGS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification. 相似文献
6.
Youn‐Gyoung Chang Seong‐Hee Nam Nam‐Kook Kim Yun‐Ho Kook Jinook Kim Soon‐Sung Yoo Chang‐Dong Kim In‐Byeong Kang In‐Jae Chung 《Journal of the Society for Information Display》2009,17(4):301-307
Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used. 相似文献
7.
Hyun‐Sang Park Seon‐Beom Ji Min‐Koo Han Jae‐Sic Lee Chi‐Woo Kim Kwang‐Soo Choi 《Journal of the Society for Information Display》2009,17(8):681-686
Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel. 相似文献
8.
Bong Hyun You Byoung Jun Lee Sang Youn Han Seiki Takahashi Brian H. Berkeley Nam Deog Kim Sang Soo Kim 《Journal of the Society for Information Display》2009,17(2):87-94
Abstract— A touch‐screen‐panel (TSP) embedded 12.1‐in. LCD employing a standard existing a‐Si:H TFT‐LCD process has been successfully developed. Compared with conventional external touch‐screen panels, which use additional components to detect touch events, the new internal TSP exhibits a clearer image and improved touch feeling, as well as increased sensing speed using discrete sensing lines to enable higher‐speed sensing functions including handwriting. The new internal digital switching TSP can be fabricated with low cost because it does not require any additional process steps compared to a standard a‐Si:H TFT‐LCD. 相似文献
9.
Jae Kyeong Jeong Jong Han Jeong Hui Won Yang Tae Kyung Ahn Minkyu Kim Kwang Suk Kim Bon Seog Gu Hyun‐Joong Chung Jin‐Seong Park Yeon‐Gon Mo Hye Dong Kim Ho Kyoon Chung 《Journal of the Society for Information Display》2009,17(2):95-100
Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio >109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system. 相似文献
10.
Sheikh Abdullah Al Nusayer Patrick Schalberger Holger Baur Florian Kleber Norbert Fruehauf 《Journal of the Society for Information Display》2023,31(9):535-547
Active matrix prestressed microelectromechanical shutter displays enable outstanding optical properties as well as robust operating performance. The microelectromechanical systems (MEMS) shutter elements have been optimized for higher light outcoupling efficiency with lower operation voltage and higher pixel density. The MEMS elements have been co-fabricated with self-aligned metal-oxide thin-film transistors (TFTs). Several optimizations were required to integrate MEMS process without hampering the performance of both elements. The optimized display process requires only seven photolithographic masks with ensuring proper compatibility between MEMS shutter and metal-oxide TFT process. 相似文献