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排序方式: 共有544条查询结果,搜索用时 31 毫秒
1.
ZnO基薄膜晶体管的研究 总被引:2,自引:1,他引:1
ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。 相似文献
2.
I.H. Song 《Thin solid films》2007,515(19):7598-7602
This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower. 相似文献
3.
本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。 相似文献
4.
Experimental measurements and full-2D numerical simulations show that velocity saturation effects in polysilicon thin-film transistor (TFTs) cannot be neglected in order to obtain a precise modelling of output characteristics. Since full-2D numerical simulations are time consuming and unpractical for circuit simulations, we have developed a new quasi-2D model, that takes into account both velocity saturation effects and the presence of a longitudinal electric field in the Poisson's equation, and includes the effect of parasitic bipolar transistor (PBT) action to reproduce kink effect. The agreement of the quasi-2D model with experimental data from p-channel polysilicon TFTs is very satisfactory even for short channel device, and the presence of a velocity-saturated region with a nearly constant free carrier concentration is reproduced without introducing further assumptions. 相似文献
5.
TFT LCD的过压驱动技术探讨 总被引:2,自引:2,他引:0
过压驱动技术是提高液晶显示器响应速度的关键技术之一。文章分析了TN型TFT液晶显示的原理及影响响应时间的因素,探讨了过压驱动的原理和系统结构,对灰阶亮度上升和下降两种状态下的应用进行了说明。对液晶显示系统进行了实验分析以及响应时间的测量,结果表明通过过压驱动可以在很大程度上提高液晶显示器的响应时间,有效改善显示画面的动态模糊问题。在0℃的环境温度下,最大灰阶响应时间不超过80ms。 相似文献
6.
刘立群 《自动化与仪器仪表》2014,(6):102-104
针对小型农作物温室环境指标监测的需要,设计实现了农作物温室大棚二氧化碳浓度监测系统。采用STC系列单片机控制,对农作物大棚内二氧化碳浓度进行近距离实时监测,采用TFT彩屏显示实时值和动态曲线,具有阀值调节,超过阀值报警,可实现小型温室农作物的生长环境二氧化碳浓度的实时监控。 相似文献
7.
Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes
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Mitsuru Nakata Genichi Motomura Yoshiki Nakajima Tatsuya Takei Hiroshi Tsuji Hirohiko Fukagawa Takahisa Shimizu Toshimitsu Tsuzuki Yoshihide Fujisaki Toshihiro Yamamoto 《Journal of the Society for Information Display》2016,24(1):3-11
We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm2/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process. 相似文献
8.
Suehye Park Edward Namkyu Cho Ilgu Yun 《Journal of the Society for Information Display》2013,21(8):333-338
Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative VGS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification. 相似文献
9.
Youn‐Gyoung Chang Seong‐Hee Nam Nam‐Kook Kim Yun‐Ho Kook Jinook Kim Soon‐Sung Yoo Chang‐Dong Kim In‐Byeong Kang In‐Jae Chung 《Journal of the Society for Information Display》2009,17(4):301-307
Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used. 相似文献
10.
Hyun‐Sang Park Seon‐Beom Ji Min‐Koo Han Jae‐Sic Lee Chi‐Woo Kim Kwang‐Soo Choi 《Journal of the Society for Information Display》2009,17(8):681-686
Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel. 相似文献