基于TLM2．0的硬件虚拟平台设计

利用OVP（Open Virtual Platform）提供的模型创建基于TLM2．0的硬件虚拟平台,可以为嵌入式软件提供一个快速有效的开发环境,实现软件和硬件的协同设计。提早开发出的软件也可以对系统虚拟平台进行功能验证,分析系统性能,确定系统的最优架构。     

基于TLM2.0的SPARC事务级建模

为提高可扩展处理器体系结构(SPARC)的设计抽象层次和仿真速度,设计一种符合第8版SPARC(SPARC V8)的事务级模型。该模型基于TLM2.0标准,采用解释型指令集仿真方法实现程序执行。通过构建验证环境,证明该事务级模型能够正确运行并跟踪SPARC V8程序,仿真速度比寄存器传输级提高2个数量级。     

变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性

通过对异质结材料上制作的肖特基结构变温C-V测量和传输线模型变温测量,研究了蓝宝石衬底AlGaN/GaN异质结高电子迁移率晶体管的直流特性在25～200℃之间的变化,分析了载流子浓度分布、沟道方块电阻、欧姆比接触电阻和缓冲层泄漏电流随温度的变化规律.得出了器件饱和电流随温度升高而下降主要由输运特性退化造成,沟道泄漏电流随温度的变化主要由栅泄漏电流引起的结论.同时,证明了GaN缓冲层漏电不是导致器件退化的主要原因.     

表面肝素改性TLM钛合金的血液相容性评价

在新型近β钛合金TLM(Ti-3Zr2Sn-3Mo-25Nb)表面用溶胶-凝胶法镀上一层TiO2薄膜,再将薄膜依次用羟基化溶液和胺基化溶液处理以在薄膜表面引入活性OH-和NH2-,然后通过该活性官能团将肝素共价键接在薄膜表面.利用XRD、SEM和EDS研究了TiO2薄膜的相结构和表面特性:通过测定材料表面的接触角、溶血率和血小板黏附行为对肝素化TLM合金的血液相容性进行分析、评价.结果表明,表面肝素化处理后TLM合金的血液相容性得到了明显的改善.     

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

In this paper two types of Al/Ti-based Ohmic contacts to Gallium Nitride (GaN) based devices are presented; ImplantedN⁺GaN (like the ones found in the Source/Drain of GaN Metal Oxide Semiconductor Field Effect Transistors-MOSFET) and heterojunction (HJ) AlGaN/GaN contacts (Source/Drain of High Electron Mobility Transistors-HEMT). Sheet resistance (R_sh) and contact resistance (R_c) have been investigated in the temperature (T) range of 25-250 °C. It was found that the R_sh (850/700 Ω□) (25/250 °C) and R_c (2.2/0.7 Ωmm) decrease with T for ImplantedN⁺GaN contact and R_sh (400/850 Ω□) and R_c (0.2/0.4 Ωmm) (weakly for R_c) increase with T for HJAlGaN/GaN contact. Numerical computation based models are used to determine the theoretical R_sh and R_c behavior with T and to fit the experimental values.     

On the dispersion of a non‐orthogonal TLM cell

The numerical dispersion of a non‐orthogonal transmission line matrix (TLM) algorithm is for the first time investigated. First of all, the dispersion relation is derived in the most general possible case. Then, the validation is carried out in the analysis of a simple one‐dimensional example. Results show that the theory is in excellent agreement with the numerical simulation. Numerical results concerning various cell shape dispersion characteristics are presented and show some relatively weak numerical dispersion even for rather highly distorted cells. Finally, some indications concerning cell shape selection to minimize the non‐orthogonal TLM cell are proposed. Copyright © 2007 John Wiley & Sons, Ltd.     

TLM nodal state estimator: An alternative method of initializing a two‐dimensional diffusion model

The transmission line matrix (TLM) method is an established technique for modelling thermal transients in heat transfer systems. However, initial and boundary conditions have always been slightly problematic, particularly when the boundary condition is specified as a temperature (Transmission Line Matrix (TLM) Techniques for Diffusion Applications. Gordon & Breach: London, 1998), for example, when the body of interest is suddenly exposed to a different temperature on its surface. In such a case the modelled solution contains additional dynamics that are associated with the two sub‐meshes in the TLM network and the two timesteps necessary for the temperature change to be fully communicated. These initialization problems are related to the fact that the boundary temperature in merely imposed as a fixed value on the network; the fundamental information‐carrying quantity, on the other hand, is the pulse, the thermal state of the body being represented by the distribution of pulses. Here, we aim to provide an alternative initialization approach, using nodal state estimation to derive pulse distributions from boundary and initial conditions specified by temperature. Consideration is given to the accuracy of the estimator by comparison with the first timestep solution proposed by Enders (Int. J. Numer. Model. 2002; 15 :251–259). Copyright © 2008 John Wiley & Sons, Ltd.     

复合次级管型直线电机性能计算

简述了复合次级管型直线电机的结构特点和由其结构所决定的优越性能,给出了此种电机三层模型与此模型的等效电路,推导出确定等效电路中电气参数的公式,进而给出按等效电路计算电机性能的公式,为求取和分析复合次级管型直线电机的特性提供了有效方法．     

Impact of injection limitations on the contact resistance and the carrier mobility of organic field effect transistors

The contact resistance as well as the mobility have developed to key performance indicators for benchmarking organic field-effect transistors. Typically, conventional methods for silicon transistors are employed for their extraction thereby ignoring the peculiarities of organic transistors. This work outlines the required conditions for using conventional extraction techniques for the contact resistance and the mobility based on TCAD simulations and experimental data. Our experimental data contain both staggered and coplanar structures fabricated by exploiting different optimization techniques like SAM treated electrodes, different shearing speeds, PS blending and silicon oxide functionalization. In addition, the work clarifies how injection limited current–voltage characteristics can affect high-performance organic field-effect transistors. Finally, we introduce a semi-physical model for the contact resistance to accurately interpret extracted benchmark parameters by means of the transfer length method (TLM). Guidelines to use conventional extraction techniques with special emphasis on TLM are also provided.     

Distribution in TLM models for diffusion (Part II: multi‐dimensional treatment)

The signals obtained at each time step of a transmission line matrix (TLM) simulation of Gaussian diffusion are analysed for two‐ and three‐dimensional cases. A combinatorial formula is derived to provide the signal magnitude at any spatial position and any time step after a single‐shot excitation in the two‐dimensional link‐line model. Formulae for the expectation and variance of the axial positions of a particle are determined for two‐ and three‐dimensional link‐line and link‐resistor models. A generalization of these formulae is proposed for higher dimensions, and an entirely numerical proving scheme is devised. Finally, we briefly compare the resulting variances and that of the underlying diffusion process. Copyright © 2003 John Wiley & Sons, Ltd.