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Jun-ichi Nishizawa Akihiko Murai Hiroki Makabe Osamu Ito Tomoyuki Kimura Ken Suto Yutaka Oyama 《Solid-state electronics》2004,48(12):2251-2254
The tunnel injection transit time (TUNNETT) diodes with p+p+n+n−n+ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p+n+) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth. 相似文献
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