碳酸盐岩岩溶储层多井评价方法及地质应用

多井评价是建立在单井精细解释对比分析基础上的预测储层及含油气性平面分布规律的技术方法,而常规测井资料无法区分碳酸盐岩岩溶储层,因而利用多井评价结果确定岩溶发育程度在平面上的分布规律就显得十分重要。为此,在岩心标定成像测井的基础上,对四川盆地高石梯—磨溪地区15口井的成像测井岩溶发育特征进行分析,建立了中二叠统茅口组岩溶发育各分带的标准成像图版,利用交会图及直方图分析各分带的常规测井响应特征,在此基础上形成了电成像测井刻度常规测井识别岩溶发育带的新方法。研究结果表明:①高石梯—磨溪地区茅口组岩溶带自上而下可划分为风化壳残积带、垂直渗流岩溶带、水平潜流岩溶带以及受岩溶作用较弱的基岩;②风化壳残积带在成像测井图像显示为"暗—亮—暗"条带状模式,垂直渗流岩溶带为垂直线状与暗色斑状组合模式,水平潜流岩溶带为水平线状—层状与斑状组合模式,基岩整体显示为亮色块状模式偶见线状或斑状特征;③有效储层主要发育在垂直渗流带和水平潜流带的顶部;④该区茅口组岩溶发育主要受裂缝发育控制,而裂缝发育又与断层关系密切。结论认为,该新方法对碳酸盐岩岩溶储层的多井评价具有普遍适用性,为四川盆地中二叠统风险探井的部署提供了技术支撑。     

Improving performance of high-power indium gallium nitride/gallium nitride-based vertical light-emitting diodes by employing simple n-type electrode pattern

In this work, simple n-type electrode structures were used to enhance the electrical and optical performances of fully packaged commercially mass-produced vertical-geometry light-emitting diodes (VLEDs). The forward bias voltage of the VLED with a Y-pattern electrode increased less rapidly than that of VLEDs with a reference electrode. The VLEDs with the reference and Y-pattern electrodes exhibited forward voltages of 2.93±0.015 and 2.89±0.015 V at 350 mA and 3.77±0.015 and 3.53±0.015 V at 2000 mA, respectively. The VLEDs with the Y-pattern electrode resulted in a higher light output than the VLEDs with the reference electrode with increase in the drive current to 2000 mA. The emission images showed that the VLEDs with the Y-pattern electrode exhibited better current spreading behavior and lower junction temperatures than the VLEDs with the reference electrode. With increase in the current from 350 to 2000 mA, the VLEDs with the Y-pattern electrode experienced a 39.4% reduction in the wall plug efficiency, whereas the VLEDs with the reference electrode suffered from a 43.3% reduction.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

Vapor absorption by LiBr aqueous solution in vertical smooth tubes

Heat and mass transfer in a falling film vertical in-tube absorber was studied experimentally with LiBr aqueous solution. The presented results include the effect of solution flow rate, solution subcooling and cooling water temperature on the absorption in a smooth copper tube 16.05 mm I.D. and 400 mm long. The experimental data in the previous report for a 1200-mm-long tube was also re-examined and compared. It was demonstrated by the observation of the flow in the tube that the break down of the liquid film into rivulets leads to deterioration of heat and mass transfer at lower film Reynolds number or in longer tubes. An attempt to evaluate physically acceptable heat and mass transfer coefficients that are defined with estimated temperature and concentration at the vapor–liquid interface was also presented.     

新结构MOSFET

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能(如改善的沟道效应(SCE)，理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。文章主要介绍了五种典型的新结构MOSFET，包括平面双栅MOSFET、FinFET、三栅MOSFET、环形栅MOSFET和竖直结构MOSFET。随着MOSFET向亚50nm等比例缩小，这些新结构器件将大有前途。     

Signal Integrity: Fault Modeling and Testing in High-Speed SoCs

As we approach 100 nm technology the interconnect issues are becoming one of the main concerns in the testing of gigahertz system-on-chips. Voltage distortion (noise) and delay violations (skew) contribute to the signal integrity loss and ultimately functional error, performance degradation and reliability problems. In this paper, we first define a model for integrity faults on the high-speed interconnects. Then, we present a BIST-based test methodology that includes two special cells to detect and measure noise and skew occurring on the interconnects of the gigahertz system-on-chips. Using an inexpensive test architecture the integrity information accumulated by these special cells can be scanned out for final test and reliability analysis.     

CCD型束流截面探测器

CCD型束流截面探测器的主要特点是使用电荷耦合器件做传感器,用束流同步光中的可见光成份做为信号源。该探测器同时具有模拟量和数字量两种输出,工作周期短,速度高,不影响束团粒子寿命,在电子储存环物理运行中,是一种有效的探测设备。     

A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception

Transmission of signals, whether on-chip or off-chip, places severe constraints on timing and extracts a large price in energy. New silicon device technologies, such as back-plane CMOS, provide a programmable and adaptable threshold voltage as an additional tool that can be used for low power design. We show that one particularly desirable use of this freedom is energy-efficient high-speed transmission across long interconnects using multi-valued encoding. Our multi-valued CMOS circuits take advantage of the threshold voltage control of the transistors, by using the signal-voltage-to-threshold-voltage span, in order to make area-efficient implementations of 4-PAM (pulse amplitude modulation) transceivers operating at high speed. In a comparison of a variety of published technologies, for signal transmission with interconnects of 10-15 mm length, we show up to 50% improvement in energy for on-chip signal transmission over binary encoding together with higher limits for operating speeds without a penalty in circuit noise margin.     

Evidence of High Vertical Wave-Number Behavior in a Continuously Stratified Reservoir: Boadella, Spain

High vertical wave-number modes clearly dominate the internal wave field during the stratification period in Boadella reservoir in northeast Spain. In this period, the extraction of hypolimnetic water, due to summer irrigation, brought the surface level down by 6 m in one month and the epilimnetic water progressively occupied the whole water column. The temperature profile, with the exception of a few meters at the surface layer, presented an almost constant temperature gradient of about 0.7°C/m. The period of the main vertical mode is 24 h with an amplitude of around 1 m. Thermistor chain records and meteorological data allow us to deduce that this mode is, at least, a third vertical mode forced by the wind, which normally has a typical periodicity of 24 h. However, when the wind changes direction from south to north, the circulation cells developed due to this forced nonstationary oscillation are destroyed. When this occurs, the Bulk Richardson number is Rib ～ 1. Similar vertical structures as a response to wind forcing should be expected in similar systems, although this has not been reported in the literature.