排序方式: 共有9条查询结果,搜索用时 15 毫秒
1
1.
Amrita Haldar Soniya D. YambemKang-Shyang Liao Nigel J. Alley Eoghan P. DillonAndrew R. Barron Seamus A. Curran 《Thin solid films》2011,519(18):6169-6173
Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C61-butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm2, open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control. 相似文献
2.
N. Edwin Widjonarko Erin L. RatcliffCraig L. Perkins Ajaya K. Sigdel Andriy ZakutayevPaul F. Ndione Dane T. GillaspieDavid S. Ginley Dana C. OlsonJoseph J. Berry 《Thin solid films》2012,520(10):3813-3818
Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiOx) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (Voc) for poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiOx film and its interface with the polymer shows Fermi level alignment of the polymer with the NiOx film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between Voc and HTL work-function. Instead, trends in jsc, Voc, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness. 相似文献
3.
M. Fleischer B. Ostrick R. Pohle E. Simon H. Meixner C. Bilger F. Daeche 《Sensors and actuators. B, Chemical》2001,80(3):169-173
To implement low-power gas sensors with low component costs, the principle of work-function read out via a hybrid suspended gate FET (SGFET) is being pursued, whereby a freely selectable sensor film undergoes a reversible work-function change corresponding to the build-up of a potential difference on the surface in response to gas adsorption/reaction. This is read out via an ISFET structure. An innovative design which allows cheap manufacturing will be described for the principle that has already been successfully demonstrated. The starting point of the design is a ceramic Al2O3 substrate coated with conductor patterns and sensitive materials onto which the FET is mounted in flip–chip technology. By means of the freely selectable sensor film and its preparation method, a wide range of applications can be opened up. 相似文献
4.
5.
Hybrid suspended gate FET (HSGFET) devices with a sensitive layer of platinum or gold were proven to be well-suited as reproducible ozone detection from the low ppb region up to 500 ppb and higher. Operating at 130°C, gold shows a nearly linear dependence on ozone concentration with high signals and a small humidity influence. Platinum at 130°C convinces with a fast response time and low cross sensitivities to other gases. 相似文献
6.
《Microelectronics Reliability》2014,54(12):2717-2722
This work presents a systematic comparative study of analog/RF performance for underlap dual material gate (U-DMG) DG NMOSFET. In previous works, improved device performances have been achieved by use of high dielectric constant (k) spacer material. Although high-k spacers improve device performance, the intrinsic gain of the device reduces. For the analog circuits applications intrinsic gain is an important parameter. Hence, an optimized spacer material having dielectric constant, k = 7.5 has been used in this study and the gain is improved further by dual-material gate (DMG) technology. In this paper we have also studied the effect of gate material having different work function on the U-DMG DG NMOSFETs. This device exploits a step function type channel potential created by DMG for performance improvement. Different parameters such as the transconductance (gm), the gain per unit current (gm/Ids), the intrinsic gain (gmRo), the intrinsic capacitance, the intrinsic resistance, the transport delay and, the inductance of the device have been analyzed for analog and RF performance analysis. Analysis suggested that the average intrinsic gain, gm/Id and gm are increase by 22.988%, 16.10% and 27.871% respectively compared to the underlap single-material gate U-DG NMOSFET. 相似文献
7.
《Microelectronics Reliability》2015,55(2):332-336
This paper investigates and compares the impacts of metal-gate work-function variation on important analog figures-of-merit (FOMs) for TFET and FinFET devices using 3-D atomistic TCAD simulations. Our study indicates that, at 0.6 V supply voltage and 0.2 V gate-voltage overdrive, TFET exhibits superior variation immunity regarding transconductance to drain–current ratio (gm/IDS), output resistance (Rout) and intrinsic gain, and comparable variability in gm and cutoff frequency (fT) as compared with the FinFET counterparts. In addition, how the correlations between pertinent parameters (e.g., gm and Rout) impact the variation immunity of important analog FOMs are analyzed. Our study may provide insights for low-voltage analog design using TFET/FinFET technologies. 相似文献
8.
本文给出了基于SDB材料的无PN结超薄膜全耗尽隐埋n沟型MOSFET的较明确的物理模型,详细分析了它的导电机理,给出了解析表达式.并将本模型的计算结果与实验结果进行了比较,同时进行了一些讨论. 相似文献
9.
1