Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

微波等离子体化学气相沉积的 a-Si∶H 性能研究

本文着重对微波等离子体化学气相沉积法高速沉积的 a-Si∶H 膜的物理性能进行评价研究.测量了沉积膜的光电性能、暗电导激活能、光禁带宽度、光吸收特性、沉积膜中悬键态密度以及氢含量等,并讨论沉积条件对膜性能的影响.结果表明,在沉积速率高达30～90(?)/s 情况下,膜的光电导(光照强度10~5Lux)与暗电导比值可达10~3～10~5,暗电导率从10~(-3)到10~(-11)((?)cm)~(-1),其激活能在0.23～0.88eV 之间(0～200℃温度范围内),光禁带宽度为1.40～2.20eV,氢含量约为2～20%.     

共面转换液晶显示器中获得对比度高于1:600的新技术

薄膜晶体管液晶电视(TFT-LCD TV)因为具有薄、轻、紧凑和可随意放置的特点，已经占据了大部分电视机市场。除了这些物理特性以外，最重要的特性是已具有了良好像质的对比度。为了将对比度提高到1：600以上，对偏振片膜、背光源板、滤色片树脂、电极锥角和摩擦条件等都进行了研究。优化的背光板组合，光滑的电极锥角和摩擦方法的控制是提高对比度的主要控制因素。应用新开发的滤色片树脂，对获得高对比度最为有效。     

高灰度级TFT-LCD显示系统的实现

提出了一种以FPGA为核心控制器的高灰度级TFT-LCD显示系统的设计方案。该系统采用幅值-帧速率控制调制-空间混合灰度调制方法,首先将10 bit的R、G、B信号分割成高8 bit数据和低2 bit数据,低2 bit数据经过空间处理后平均分到4个相邻的8 bit数据上,然后把这8 bit数据继续分割成高6 bit数据和低2 bit数据,其中高6 bit数据用于幅值调制,低2 bit数据用于帧速率控制调制,从而实现1 024个灰度等级显示。试验结果表明,该系统具有良好的显示效果和较高的显示灰度等级。     

Decision support in machine vision system for monitoring of TFT-LCD glass substrates manufacturing

This study addresses classification methodology for the automatic inspection of a range of defects on the surface of glass substrates in thin film transistor liquid crystal display glass substrate manufacturing. The proposed methodology consisted of four stages: (1) feature extraction by calculating the wavelet co-occurrence signature from the substrate images, (2) handling of imbalanced dataset using the Synthetic Minority Over-sampling TEchnique (SMOTE), (3) reduction of the feature's dimension by principal component analysis, and (4) finally choosing the best classifier between three different methods: Classification And Regression Tree (CART), Multi-Layer Perceptron (MLP) and Support Vector Machine (SVM). In training the SVM and MLP classifiers, the simulated annealing algorithm was used to obtain the optimal tuning parameters for the classifiers. From the industrial case study, the proposed feature extraction algorithm could remove the defect-irrelevant image features and SMOTE increased the accuracy of all three methods. Furthermore, the optimized SVM and MLP models were more accurate than the CART model whereas a higher accuracy of 89.5% was observed for the proposed SVM model.     

基于ARM的真彩LCD驱动程序设计

该文首先研究了SAMSUNG S3C2440 ARM芯片的LCD控制模块及液晶屏的接口,然后研究了NEC NL2432 3.5寸LCD真彩液晶屏的逻辑及成像原理。在此基础上,基于LINUX操作系统,对LCD驱动程序进行研究和实验,实验结果表明:本文研究出的LCD驱动程序适应性好,能够适应上述硬件芯片环境;系统稳定性好,能够得到清晰稳定的真彩画面。