Shorter-wavelength lithography utilizing MRS-type negative resists

New negative photoresists, called MRS-type resists, are successfully applied to deep-UV 1:1 projection printing and 365 nm 10:1 reduction projection printing. The MRS-type resists are characterized by intense absorption of exposure light and absence of swelling in aqueous developer solutions. They resolve steep profile submicron images in a 1.0 μ thick film. They are not adversely affected by reflected light from water surfaces. In order to use MRS-type resists with broader development latitude, optimizing the extent of light absorption is important because the resist profiles strongly depend on development conditions due to increasing solubility towards the resist bottom.     

Plasma developable positive UV -resists

The plasma developable positive UV-resists ‘PDPUV’ are one component systems, consisting of acrylic copolymers with silicon containing side groups, which can be split off upon exposure with UV light. In a subsequent hardbake, the silicon-containing species can be removed from the exposed resist, providing higher etch rates in an oxygen plasma of the exposed as compared to the unexposed areas thus giving rise to positive tone imaging.Due to their high optical extinction at the exposure wavelength (e.g. 254 nm) and due to their high stability in the oxygen plasma, the PDPUV are idealy applicable in a bilevel resist scheme; e.g. a 0.34 μm thick PDPUV layer on top of a 2.0 μm polyimide film may be imaged with a 250 mJ/cm² exposure at 254 nm. After hardbake the image in the PDPUV layer is developed and transferred into the polyimide by means of an RIE-O-plasma, yielding a 2.00 μm deep relief image in the polyimide.     

新型深紫外非线性光学晶体KBe2BO3F2族的研究进展

深紫外非线性光学晶体KBe2BO3F2（KBBF）发展至今,已有将近20年的历史。首先简单回顾了KBBF化合物的发现、晶体生长以及基本光学性质,同时对KBBF族（MBe2BO3F2,M=K,Rb,Cs）的其它化合物如：RbBe2BO3F2和CsBe2BO3F2的晶体生长和其基本光学性质进行了报道,然后对这些新晶体产生深紫外谐波光输出的能力做了评估,最后介绍了利用KBBF晶体器件产生的深紫外相干光源在先进仪器等方面的应用。     

130nm以下光刻禁止光学空间周期的系统性研究

禁止光学空间周期“Forbidden Pitch”是光学临近效应修正（0PC）中必须要面对并解决的问题之一．它主要出现在1．1～1．4倍（曝光波长／数值孔径）的范围内．由于在此范围内空间图像对比度的削弱,这种效应会导致图形的线宽明显小于其他空间周期．目前业界常用的规避手段主要是通过采集大量的数据校正光学临近效应修正模型,但随着半导体进入深亚微米时代,数据的采集量、置信度越发重要和关键．因此,成功地采用光学临近效应修正技术的关键和前提是建立一套成熟的相关工艺．本文着重研究空间光学和光刻工艺技术的相互关系．我们发现在禁止光学空间周期附近的光学表现与有效高斯模糊息息相关．较长的有效光酸扩散长度将显著地消弱光刻表现,进而影响禁止光学空间周期的图形表现．     

Processing of membrane protein crystal using ultraviolet laser irradiation

We demonstrated the processing of a membrane protein crystal, using a pulsed UV laser soft ablation (PULSA) technique. Irradiation with deep-UV laser pulses at a wavelength of 193 nm successfully processed not only single crystals of the membrane transporter protein AcrB but also nylon loops and cryoprotectants at a cryogenic temperature. Nonprocessed parts of the crystals exhibited no signs of crack or denaturation after the laser exposure. The trimmed crystals were found to be of high resolution for X-ray diffraction data collection. The results described here indicate that PULSA processing is an effective tool for membrane protein crystals, as well as for soluble protein crystals.     

AlGaN multiple quantum well deep-ultraviolet micro-light-emitting diodes for high color conversion efficiency quantum dots display

Displays based on inorganic micro-light-emitting diodes (micro-LEDs) are highly anticipated for next-generation technologies. AlGaN-based deep-ultraviolet (deep-UV) micro-LED as the excitation source for quantum dots display with high efficiency was reported in this paper. To achieve optimized electro-optical performance, deep-UV micro-LEDs with different electrodes were fabricated and analyzed in sizes from 200 × 200 to 10 × 10 μm². At the same forward bias, the devices with Ti/Al-based electrodes achieved 10 times injection current and three times electroluminescence intensity than those with Cr/Al-based electrodes. The blueshift phenomenon of deep-UV light was observed from 292 nm at 2 A/cm² to 287 nm at 200 A/cm² with the increasing current density. By the excitation of deep-UV micro-LED, quantum dot film achieved high light conversion efficiency and optimized color rendering, as the converted color emission peak was separate from the pumping source. The high energy of deep-UV photons and the narrow emission bandwidth of QDs resulted in prominent color purity. The forward voltage and electroluminescence intensity uniformity of a 250 × 250 micro-LED array with each pixel size of 30 × 30 μm² were further discussed. The optical microscope images of green QD film pumped by a deep-UV micro-LED demonstrated its competitive application in the color-converted display.     

新型深紫外非线性光学晶体KBe_2BO_3F_2族的研究进展

深紫外非线性光学晶体KBe2BO3F2(KBBF)发展至今,已有将近20年的历史。首先简单回顾了KBBF化合物的发现、晶体生长以及基本光学性质,同时对KBBF族(MBe2BO3F2,M=K,Rb,Cs)的其它化合物如:RbBe2BO3F2和CsBe2BO3F2的晶体生长和其基本光学性质进行了报道,然后对这些新晶体产生深紫外谐波光输出的能力做了评估,最后介绍了利用KBBF晶体器件产生的深紫外相干光源在先进仪器等方面的应用。     

130nm以下光刻禁止光学空间周期的系统性研究

禁止光学空间周期"Forbidden Pitch"是光学临近效应修正(OPC)中必须要面对并解决的问题之一.它主要出现在1.1～1.4倍(曝光波长/数值孔径)的范围内.由于在此范围内宅间图像对比度的削弱,这种效应会导致图形的线宽明显小于其他空间周期.目前业界常用的规避手段主要是通过采集大量的数据校正光学临近效应修正模型,但随着半导体进入深亚微米时代,数据的采集量、置信度越发重要和关键.因此,成功地采用光学临近效应修正技术的关键和前提是建立一套成熟的相关工艺.本文着重研究空间光学和光刻工艺技术的相互关系.我们发现在禁止光学空间周期附近的光学表现与有效高斯模糊息息相关.较长的有效光酸扩散长度将显著地消弱光刻表现,进而影响禁止光学空间周期的图形表现.