全文获取类型
收费全文 | 157篇 |
免费 | 21篇 |
国内免费 | 23篇 |
专业分类
电工技术 | 2篇 |
综合类 | 16篇 |
化学工业 | 5篇 |
金属工艺 | 29篇 |
机械仪表 | 2篇 |
建筑科学 | 6篇 |
水利工程 | 2篇 |
石油天然气 | 1篇 |
无线电 | 102篇 |
一般工业技术 | 23篇 |
冶金工业 | 2篇 |
原子能技术 | 4篇 |
自动化技术 | 7篇 |
出版年
2023年 | 2篇 |
2022年 | 1篇 |
2021年 | 5篇 |
2020年 | 5篇 |
2019年 | 3篇 |
2018年 | 3篇 |
2017年 | 5篇 |
2016年 | 3篇 |
2015年 | 10篇 |
2014年 | 8篇 |
2013年 | 9篇 |
2012年 | 11篇 |
2011年 | 9篇 |
2010年 | 10篇 |
2009年 | 16篇 |
2008年 | 19篇 |
2007年 | 8篇 |
2006年 | 6篇 |
2005年 | 6篇 |
2004年 | 7篇 |
2003年 | 7篇 |
2002年 | 4篇 |
2001年 | 10篇 |
2000年 | 5篇 |
1999年 | 3篇 |
1998年 | 5篇 |
1997年 | 2篇 |
1996年 | 3篇 |
1995年 | 5篇 |
1994年 | 1篇 |
1993年 | 2篇 |
1990年 | 2篇 |
1989年 | 1篇 |
1983年 | 1篇 |
1975年 | 2篇 |
1974年 | 2篇 |
排序方式: 共有201条查询结果,搜索用时 15 毫秒
1.
As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit
speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of
underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO2 substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but
also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained
suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect. 相似文献
2.
Healing Effect of Controlled Anti‐Electromigration on Conventional and High‐Tc Superconducting Nanowires 下载免费PDF全文
Xavier D. A. Baumans Joseph Lombardo Jérémy Brisbois Gorky Shaw Vyacheslav S. Zharinov Ge He Heshan Yu Jie Yuan Beiyi Zhu Kui Jin Roman B. G. Kramer Joris Van de Vondel Alejandro V. Silhanek 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(26)
The electromigration process has the potential capability to move atoms one by one when properly controlled. It is therefore an appealing tool to tune the cross section of monoatomic compounds with ultimate resolution or, in the case of polyatomic compounds, to change the stoichiometry with the same atomic precision. As demonstrated here, a combination of electromigration and anti‐electromigration can be used to reversibly displace atoms with a high degree of control. This enables a fine adjustment of the superconducting properties of Al weak links, whereas in Nb the diffusion of atoms leads to a more irreversible process. In a superconductor with a complex unit cell (La2?x Cex CuO4), the electromigration process acts selectively on the oxygen atoms with no apparent modification of the structure. This allows to adjust the doping of this compound and switch from a superconducting to an insulating state in a nearly reversible fashion. In addition, the conditions needed to replace feedback controlled electromigration by a simpler technique of electropulsing are discussed. These findings have a direct practical application as a method to explore the dependence of the characteristic parameters on the exact oxygen content and pave the way for a reversible control of local properties of nanowires. 相似文献
3.
4.
采用电迁移锈蚀法对杂散电流环境下混凝土保护层中氯盐传输特性进行了研究。通过对四组试件在不同电流强度,不同通电时间情况下混凝土保护层内氯离子浓度的变化特征,重点分析了电场作用对保护层内氯离子传输进程和试件表面氯离子浓度的影响规律。结果表明,电场作用下保护层内氯离子浓度在数十小时内便从非稳态传输演变为稳态传输,传输效率较自由扩散高900多倍,但在稳态传输阶段氯离子浓度并非稳定不变,而是随通电时间增加整体呈下降趋势;保护层内氯离子达稳态传输前,混凝土表面氯离子浓度增长规律与一般氯盐环境中明显不同,其随通电时间增长以幂函数形式降低,随电流强度增加呈幂函数形式增长,且受通电时间的影响更为显著。 相似文献
5.
随着微电子技术的发展,作为超大规模集成电路互连线的金属薄膜的截面积越来越小,其承受的电流密度急剧增加,电迁移引起的互连失效变得尤为突出.针对集成电路中金属互连线的电迁移现象,以Black方程为基础,对其进行了修正.并以铝硅合金互连线为研究对象,对其电迁移过程进行了详细的加速寿命试验研究,获取了修正后的Black方程中的相关参数,分析了不同环境温度、不同电流密度、不同初始电阻等因素对铝互连线电迁移的影响规律.结果表明,铝硅合金互连线的电迁移寿命与上述参数均成反比关系. 相似文献
6.
V. V. Dyakin V.S Yefanov M. A. Tanatar A. I. Akimov A. P. Chernyakova 《Journal of Materials Engineering and Performance》1995,4(3):248-251
Electromigration stability of Tl2Ba2CuO6+x
ceramics is shown to decrease significantly when the material is treated in water vapor atmosphere. TheT
c decrease in these samples is accompanied by a resistance increase, while the Seebeck coefficient,S, remains unchanged. The authors conclude that the main effect comes from grain-boundary degradation under the water vapor
treatment. For initial samples, electromigration stability strongly depends on the sample oxygen doping level and increases
for materials with higher oxygen content. The effect is assumed to be due to the filling of interstitials in Tl-O layers by
oxygen atoms. 相似文献
7.
Arthur J. Learn 《Journal of Electronic Materials》1974,3(2):531-552
An investigation of electromigration-induced failure in aluminum alloy films, with the major emphasis on aluminum-copper-silicon,
was conducted. Flash evaporation was utilized for alloy deposition and yielded aluminum-copper films having electromigration
resistance comparable to that of such films prepared by other techniques. Results for aluminum-copper-silicon and aluminum-copper
were similar indicating the passive role of silicon in the presence of copper. Additions of four weight percent copper resulted
in near-optimum electromigration resistance. In addition, hot-substrate deposition was beneficial in attaining greater lifetime.
For films deposited on unheated substrates, or having lower copper contents, heat treatment seriously degraded electromigration
resistance. Heat treatment effects were considered to be a consequence of copper redistribution. Lifetime decrease at large
copper contents and possible saturation at large thicknesses were interpreted in terms of clustering of CuAl2 precipitates. The superior reliability of copper-alloyed metallization when compared with aluminum or aluminum-silicon was
clearly demonstrated. Lifetime improvement could be accounted for by the increased activation energy for the failure process
in the aluminum-copper alloys. 相似文献
8.
9.
The 1 /fα noise was measured on a variety of Al-based thin metal films with widely varying microstructure using an ac bridge technique.
The magnitude of the current noise in response to a small, non-destructive ac signal was found to vary several orders of magnitude
between 0.01 and 10 Hz and was correlated to the microstructural differ-ences of the films. These differences have a strong
affect on film lifetimes as measured in an accelerated electromigration test. Variation in microstructure was accomplished
by different deposition temperatures and annealing parameters, and verified using TEM micrographs. Following fabrication,
the current noise magnitude was measured and found to be sensitive to film width and grain size. The use of this technique
to discriminate differences in film microstructure is discussed along with the correlations between ex-cess noise and the
quality of the thin film as a metallic interconnection. 相似文献
10.
In order to obtain both high electromigration (EM) reliability and fine-dimensional control in high-frequency surface acoustic
wave (SAW) devices, 4-layered Ti/Al-Mo/Ti/Al-Mo electrode films were investigated on 128° Y-X LiNbO3 substrates by sputtering deposition. The results indicated that the 4-layered films had an improved EM reliability compared
to conventional Al-0.5wt.%Cu films. Their lifetime is approximately three times longer than that of the Al-0.5wt.%Cu films
tested at a current density of 5 × 107 A/cm2 and a temperature of 200°C. Moreover, the 4-layered films were easily etched in reactive ion etching and fine-dimensional
control was realized during the pattern replication for high-frequency SAW devices. For the 4-layered films, an optimum Mo
quantity and sputtering parameters were very significant for high EM reliability. 相似文献