LDA端泵浦电光调Q脉冲输出特性研究

利用晶体的电光效应制成脉冲式Q开关(PRM),实现谐振腔中反射镜的部分反射而形成激光振荡.激光介质为Nd:YAG,采用300W准连续LDA(激光二极管阵列)端面泵浦,表面加微柱透镜和透镜导管进行光耦合,传输效率75%,电光晶体为KDP,平-凹腔结构,腔内放置介质膜起偏器,腔长11cm,退压式调Q,设计了实用的退压调Q电路,Q开关后沿触发,改进了硅光电二极管弱光测量电路,输出脉冲被调制,输出脉宽11ns,光-光转换效率10.8%,输出单脉冲能量4mJ,对实验结果进行了分析讨论.     

Longitudinal Electrooptic Effects and Photosensitivities of Lead Zirconate Titanate Thin Films

The feasibility of storing and reading high-density optical information in lead zirconate titanate (PZT) and in lead lanthanum zirconate titanate (PLZT) thin films depends on both the longitudinal electrooptic coefficients and the photosensitivities of the films. This paper describes the methods used to measure the longitudinal electrooptic effects and the photosensitivities of the films. The results of these measurements were used to evaluate a longitudinal quadratic electrooptic R coefficient, a longitudinal linear electrooptic r_c coefficient, and the wavelength dependence of the photosensitivity of a composition of PZT polycrystalline thin film. The longitudinal electrooptic R and r_c coefficients are about an order of magnitude less than the transverse R and r_c coefficients of bulk ceramics of similar compositions. This is attributed to clamping of the film by the rigid substrate. The large birefringence of the films after poling (>10⁻²) suggests that the optic axes of the films are preferentially oriented normal to the film surface. The techniques used in this paper for evaluating the photosensitivities of thin films are based on measuring the photocurrent generated rather than the reduction in coercive voltage (as in bulk ceramics) when the film is exposed to light. The thin film photosensitivities appear to be significantly higher than those of bulk ceramics of similar compositions. The high photosensitivities coupled with the substantial longitudinal electrooptic coefficients combine to establish the feasibility of using PZT or PLZT thin films for optical information storage applications.     

Dielectric and electrooptic properties of acetate derived PLZT X/65/35 thin films

Abstract

PLZT solutions were prepared from the as-received acetate precursors by means of a simple mixing procedure which produced a stock solution of approximately 10% oxide solids. Films were fabricated via dip coating and heat treating at 700°C for two minutes per layer. As many as 150 layers were deposited with an automatic dip coating system. All of the resulting films were optically transparent and well crystallized in the perovskite phase. The films were evaluated with respect to dielectric and electrooptic properties. Shutter contrast ratios as high as 1000 to 1 were measured.     

Waveguides in Lithium Niobate

Lithium niobate (LiNbO₃ is considered to be the leading electrooptical material for fabrication of active waveguides, modulators, and switches for application in integrated optical circuits. LiNbO₃ is a ferroelectric material with a high Curie temperature of 1210°C. This is essential to permit rapid diffusion at high temperature, e.g., >1000°C, without domain reversal. Its high electrooptic coefficient allows modulation at relatively low voltages. Waveguides are fabricated in LiNbO₃ by Ti indiffusion around 1000°C, by Li₂O outdiffusion, and, more recently, by Li⁺/H⁺ ion exchange. We report results of a study on diluted Li⁺/H⁺ ion exchange. This process is attractive because it allows control of the index change between 0.003 and 0.1 Furthermore, the fabricated waveguides are polarization selective, have high optical damage resistance, and do not exhibit index instability as is the case with complete Li⁺/H⁺ exchange. The variation in both the index of refraction and the diffusion coefficient with composition is very nonlinear. Mechanisms contributing to these nonlinear properties are discussed.     

NANO-STRUCTURED OXIDES FOR THE NEXT GENERATION OF ELECTROOPTIC DEVICES

ABSTRACT

A discussion is given of three-dimensional nano-structures utilizing high-dielectric oxides for electrooptic devices. Included are nano-tubes, nano-rods, and nano-dots, and both ultra-lithography and self-assembly techniques for processing are discussed.     

Terahertz Phonon Mode Engineering of Highly Efficient Organic Terahertz Generators

For terahertz (THz) wave generators based on organic electrooptic crystals, their intrinsic phonon modes are playing an essential role in THz generation characteristics. Here, this study proposes an effective design strategy for THz phonon mode engineering of organic electrooptic salt crystals for efficient optical‐to‐THz frequency conversion. To reduce phonon‐mode intensity, strongly electronegative trifluoromethyl group acting as strong hydrogen‐bond acceptor is incorporated into molecular anions. New 2‐(4‐hydroxy‐3‐methoxystyryl)‐1‐methylquinolinium 4‐(trifluoromethyl)benzenesulfonate (HMQ‐4TFS) crystals exhibit a relatively small absorption coefficient in the THz spectral range between 0.5 and 4 THz, which is attributed to suppressed molecular vibrations due to strong hydrogen bonds involving the 4TFS anion. In addition, HMQ‐4TFS crystals possess a very large macroscopic optical nonlinearity, comparable (or even higher) to benchmark stilbazolium crystals. Based on the low‐intensity THz phonon modes and the large optical nonlinearity, a 0.37 mm thick HMQ‐4TFS crystal pumped with 150 fs infrared laser pulses facilitates very efficient THz wave generation by optical rectification, delivering 23 times higher peak‐to‐peak THz electric field than the widely used standard inorganic ZnTe crystal (1.0 mm thick) and a broader spectral bandwidth. Therefore, strongly electronegative groups introduced into molecular salt electrooptic crystals provide a very promising design strategy of THz phonon mode engineering for developing intense broadband THz sources.