Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

基于梯度提升决策树的车轮轮缘厚度磨耗预测

轮对在列车走行过程中起着导向、承受以及传递载荷的作用，其踏面及轮缘磨耗对地铁列车运行安全性和钢轨的寿命都将产生重要影响。根据地铁列车车轮磨耗机理，分析车轮尺寸数据特点，针对轮缘厚度这一型面参数，基于梯度提升决策树算法构建轮缘厚度磨耗预测模型。在该模型的基础上，任意选取某轮对数据进行验证分析，结果表明：基于梯度提升决策树的轮对磨耗预测模型具有较好的预测精度，可预测出1~6个月的轮缘厚度变化趋势范围，预测时间范围较长，可为地铁维保部门对轮对的维修方式由状态修转为预防修提供指导性建议。     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

地统计克立格插值法在工程土方计算中的应用

土方计算是工程中经常碰到的问题。尝试利用地统计学的克立格插值法来计算土方，将其应用于余姚市泗门镇土地整理工程中进行实测试验。介绍了其基本的原理和公式，并与利用数字高程模型计算得到的土方工程量进行了比较，发现地统计插值法可较精确地确定设计标高和土方量，证明该方法的可行性和优越性。     

应用改进BP网络对潼关高程的预测

作者在分析了影响汛前和汛后潼关高程变化值的因素的基础上，利用改进BP网络模型对非特征汛期和汛期潼关高程的变化值进行了计算。计算中不采用潼关的绝对高程，而用高程的变化量作为网络的较出物正量，从而减少计算误差，同时又能客观地考虑各影响因子的作用。改进后的BP模型学习时间短，精度满足要求。用该模型计算的潼关高程变化趋势与实际水库调度运行中的高程基本吻合。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

GPS高程在测量中的应用

通过对高程拟合方案的建立 ,详细分析了拟合点分布不同和一次、二次函数拟合对高程拟合带来的影响 ,并提出了提高水准拟合精度的一些有效措施 ,最后就拟合的精度作了适当的分析     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

土的最大干密度和最优含水率快速测定法

对快速击实试验研究成果进行了总结,并介绍了应用快速击实试验研究成果的经验.不论是重型击实还是轻型击实,也不论击实试验所给定的击实功能多大,应用"一点法"或"快速法"击实试验原理,对土料都有一定要求."一点法"击实试验与快速击实试验所用土体的比重在2.67～2.73之间,当被测土样的比重超越此范围时,在绘制击实曲线时可适当偏离ρdmax计算值的点,但这个误差是很小的,通常ρdmax的影响在±0.01 g/cm3以内,而对ωop的影响在±0.5%以内.结合工程实例,对击实试验成果的简化校正作了详细介绍.     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。