BaxSr（1—x）TiO3多层膜椭偏光谱研究

用溶胶－凝胶技术在Bi(100）衬底上制备了单层和渐变型多层的BaxSr(1-X)TiO3薄膜，其膜层组分分别为：Ba0.7Sr0.3TiO3,Ba0.8Sr0.2TiO,Ba0.9Sr0.1TiO3,BaTiO3，对生长制备出的多层BaxSr(1-X)TiO3薄膜进行了变角度椭偏光谱测量，通过椭偏光谱解谱分析研究，首次得到了BaxSr(1-X)TiO3多层膜结构不同膜层的膜厚和光学常数，其结果显示：椭偏光谱分析得到的不同膜层的膜厚与卢瑟福背向散射测量得到的结果基本相符；渐变型多层膜中BaTiO3薄膜的折射率比单层BaTiO3薄膜折射率大许多，与体BaTiO3的折射率相接近，这说明渐变型多层膜中BaTiO3薄膜的光学性质与体材料的光学性质接近。     

In-situ monitoring and control for MOCVD growth of AlGaAs and InGaAs

We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult and time-consuming to obtain after growth.     

Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry

Atomic layer epitaxy or ALE has proven to be useful for the growth of epitaxial layers of high uniformity, good quality, and well-controlled thickness. In this study, we have carried out in-situ monitoring during the atmospheric pressure ALE of CdTe on GaAs (100) substrates using spectroscopic ellipsometry (SE). The susceptor temperature, reactant partial pressures, as well as the flow and flush duration for each precursor are crucial process variables for ALE growth. Growth was carried out for 20–25 cycles under different sets of these process conditions during the experiment and in-situ SE was used to verify the presence of layer-by-layer growth, which enabled the quick determination of the process window. We observed ALE growth of CdTe at 300°C, supporting the explanation that the growth of CdTe occurs via a surface catalyzed decomposition of the Te precursor di-isopropyltelluride (DIPTe). Investigation of ALE mode growth behavior for different susceptor temperatures and DIPTe flush times indicated that the growth was limited by competition between desorption and reaction of the adsorbed DIPTe species on the Cd terminated surface.     

钼酸盐对碳钢缓蚀作用机理的椭圆法研究

用椭圆法通过测定表面膜层厚度,折射系数和表面复盖度研究了钼酸盐对碳钢在工业冷却水中的缓蚀作用。实验结果表明:形成具有良好保护性能的较完整致密的表面膜层的最佳钼酸盐浓度为200ppm。文中对缓蚀作用机理进行了讨论。     

In situ ellipsometric study of a palladium catalyst during the oxidation of methane

Ellipsometry is used to follow the growth of a PdO layer on the surface of a thick Pd-film catalyst during methane oxidation at 500°C. The oxide layer that develops under rich conditions (excess CH₄) is quite porous and roughens with time. Little CO is formed during this period, but the CO₂ formation rate increases until spontaneous oscillations develop, which correlate with changes in the ellipsometric data. These changes indicate that the porous oxide rapidly converts to a metal-rich state, which has decreased catalytic activity, and then slowly reoxidizes.     

X-ray photoelectron spectroscopy of Pd/γ-alumina and Pd foil after catalytic methane oxidation

Samples of palladium supported on-alumina and a palladium foil were used as catalysts for methane oxidation at 550° C. The samples were quenched quickly in the reaction chamber to room temperature in flowing Ar and then transferred in vacuo for XPS analysis. Structure sensitivity was manifest from an increase in PdO stability and a decrease in carbon deposition relative to Pd with increasing particle size. The results were compared with recent ellipsometric data.     

石英晶体最大双折射率色散特性的椭偏测量

为了测量石英晶体最大双折射率的色散特性,在椭偏光谱仪的水平透射测量模式下,通过对确定厚度的石英波片相位延迟量的精确测量,计算出了石英晶体的最大双折射率值,并进行了误差分析。结果表明:这种方法光路简单、操作方便,屏蔽了光源的不稳定性;双折射率测量精度达到了10-6,比连续偏光干涉法的测量精度提高了1个数量级;实现了对石英晶体的最大双折射率色散特性的连续光谱测量;此方法对其它双折射晶体材料的双折射率色散特性的研究也同样适用。     

Detection of low molecular weight toxins using an optical phase method of ellipsometry

The method of total internal reflection ellipsometry (TIRE), which records simultaneously two parameters Δ and Ψ related to the amplitudes and phases of p- and s-components of polarised light, respectively, was exploited here for detection of mycotoxins (T-2 and zearalenone). The above mycotoxins in sub-ppb concentrations were detected using TIRE in both direct and competitive immunoassay. The study of immune reaction kinetics allowed the evaluation of adsorption/desorption rates and the association constant for zearalenone. The investigation of grain products samples revealed the presence of high concentrations of T-2 (>600 ng/ml) in mould products.     

Reflection and Absorption Techniques for Optical Characterization of Chemically Assembled Nanomaterials

This review discusses recent developments in the areas of fabrication, certain types of optical characterization, and applications of a selected class of chemically assembled nanomaterials, namely i) gold and silver nanoparticles deposited onto optically transparent glass substrates; ii) thiol‐functionalized self‐assembled monolayers (SAMs); iii) chemically stabilized gold and silver nanoparticles (monolayer protected clusters, MPCs); and iv) MPCs linked to metallic substrates and adsorbates. Six linear optical techniques for the characterization of these materials are discussed: transmission localized surface plasmon resonance spectroscopy, T‐LSPR; propagating surface plasmon resonance spectroscopy, P‐SPR; polarization‐selective Fourier transform infrared reflection absorption spectroscopy, PS‐FTIRRAS; polarization‐modulation Fourier transform infrared reflection absorption spectroscopy, PM‐FTIRRAS; surface‐enhanced infrared reflection absorption spectroscopy, SEIRRAS; and infrared ellipsometry. The review focuses particularly on providing a unified treatment of these six optical techniques by using a relatively simple stratified multilayer model.     

Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics

Spectroscopic ellipsometry has long been recognized as the technique of choice to characterize thin films and multilayers. Instrumentation for the next generation of VUV lithography at 157 nm requires special optical setup since O₂ and H₂O are extremely absorbing below 190 nm. A new system has been developed which works into a purged glove box to reduce the oxygen and water contamination in the part per million range. Ellipsometric and photometric measurements vs. wavelength and angle of incidence can be performed. Grazing X-ray option has been added on the same instrument to provide a better picture of the analyzed samples. This paper presents in detail the new system with its two measurement methods, and includes experimental results gate dielectrics layers and high k dielectrics.